H. Casey

发表

Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs

H. Casey, F. Stern, 1976 .

Correlation of refractive index profiles with substitutional hydrogen concentrations in annealed proton‐exchanged LiNbO3 waveguides

H. Casey, J. Zavada, Chang‐Ho Chen, 1993 .

Heterostructure lasers. Part A. Fundamental principles

H. Casey, M. Panish, 1978 .

Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes

H. Casey, M. Bergmann, 1998 .

Variation of intervalence band absorption with hole concentration in p‐type InP

H. C. Casey, H. Casey, P. L. Carter, 1984 .

Properties of spin-on glass as an insulator for InP metal-insulator-semiconductor structures

H. Casey, T. Mii, 1990 .

Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV

H. C. Casey, K. W. Wecht, K. Wecht, 1975 .

Room‐temperature threshold‐current dependence of GaAs‐AlxGa1−xAs double‐heterostructure lasers on x and active‐layer thickness

H. C. Casey, H. Casey, 1978 .

Heterostructure lasers

H. Casey, Horace Craig Casey, 1978 .

CHAPTER 8 – DEGRADATION

H. C. Casey, H. Casey, 1978 .

CHAPTER 5 – HETEROSTRUCTURE MATERIALS

H. C. Casey, H. Casey, 1978 .

Dry processing of high resolution and high aspect ratio structures in GaAs-Al(x)Ga(1-x) As for integrated optics.

H. Casey, S. Somekh, S Somekh, 1977, Applied optics.

Rare Earths in Covalent Semiconductors: the Thulium‐Gallium Arsenide System

G. L. Pearson, H. Casey, 1964 .

Insulating Layers by MBE

A. Cho, H. Casey, 1985 .

Electroluminescent shifting-peak spectra in GaAs with uniform excitation

H. Casey, R. Bachrach, 1973 .

Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs

H. Casey, M. Panish, K. B. Wolfstirn, 1971 .

CHAPTER 7 – FABRICATION AND OPERATING CHARACTERISTICS

H. Casey, M. Panish, 1978 .

Diffusion in Semiconductors

G. L. Pearson, H. Casey, 1975 .

Variation of Electrical Properties with Zn Concentration in GaP

H. Casey, K. B. Wolfstirn, F. Ermanis, 1969 .

Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

A. Cho, H. Casey, R. Dixon, 1976 .

Diffusion and solubility of zinc in indium phosphide

L. L. Chang, H. Casey, 1964 .

ROOM TEMPERATURE SUPER‐RADIANCE RADIATION IN n‐TYPE GaAs BY CONTINUOUS ELECTRON‐BEAM EXCITATION

H. Casey, R. Kaiser, 1966 .

Epitaxial growth on optical gratings for distributed feedback GaAs injection lasers

H. Casey, M. Panish, S. Somekh, 1975 .

GaAs–Alx Ga1−x As double‐heterostructure lasers prepared by molecular‐beam epitaxy

A. Cho, H. Casey, 1974 .

Application of molecular-beam epitaxial layers to heterostructure lasers

A. Cho, H. Casey, P. Barnes, 1975, IEEE Journal of Quantum Electronics.

Properties of Schottky barriers and p‐n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layers

A. Cho, H. Casey, 1974 .

Influence of Growth Conditions on The Threshold Current Density of Double Heterostructure Lasers Prepared by Molecular Beam Epitaxy

A. Cho, H. Casey, P. Foy, 1980, Integrated and Guided Wave Optics.

Photocollection efficiency and interface charges of MBE‐grown abrupt p (GaAs) ‐N (Al0.33Ga0.67As) heterojunctions

A. Cho, H. Casey, H. Kroemer, 1978 .

Use of oxygen‐doped AlxGa1−xAs for the insulating layer in MIS structures

E. H. Nicollian, A. Cho, H. Casey, 1978 .

The effect of oxygen incorporation in semi‐insulating (AlxGa1−x)yIn1−yP

G. B. Stringfellow, T. Y. Wang, H. Casey, 1992 .

Heterostructure lasers

H. Casey, 1978 .

Refractive index of GaAs0.62P0.38 between 1.2 and 2.0 eV

H. Casey, 1974 .

Investigation of Inhomogeneities in GaAs by Electron‐Beam Excitation

H. Casey, 1967 .

Temperature dependence of the threshold current density in InP‐Ga0.28In0.72As0.6P0.4 (λ=1.3 μm) double heterostructure lasers

H. Casey, 1984 .

CHAPTER 2 – OPTICAL FIELDS AND WAVE PROPAGATION

H. Casey, 1978 .

Preparation of high-aspect ratio periodic corrugations by plasma and ion etching.

H. C. Casey, S. Somekh, Marc Ilegems, 1976, Applied optics.

Analysis of N‐Type GaAs with Electron‐Beam‐Excited Radiative Recombination

H. Casey, R. Kaiser, 1967 .

Transport in Relaxation Semiconductors

H. Casey, W. V. Roosbroeck, 1972 .

Carrier Transport and Potential Distributions for a Semiconductor p-n Junction in the Relaxation Regime

H. Casey, H. Queisser, W. V. Roosbroeck, 1971 .

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

John F. Muth, H. C. Casey, Umesh K. Mishra, 1997 .

CHAPTER 6 – PHASE EQUILIBRIA AND HETEROEPITAXY

H. Casey, 1978 .

GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement

H. Casey, M. Panish, T. Paoli, 1974 .

Diffusion in the III–V Compound Semiconductors

H. Casey, 1973 .

Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium Arsenide

L. L. Chang, H. Casey, M. Panish, 1967 .

Prevention of diffusion-induced defects in the fabrication of diffused electroluminescent GaP devices

A. S. Jordan, G. Rozgonyi, H. Casey, 1972 .

The 1040°C solid solubility isotherm of zinc in GaP: The fermi level as a function of hole concentration

H. Casey, M. Panish, 1968 .

Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes

John F. Muth, H. C. Casey, John M. Zavada, 1996 .

Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps

H. Casey, M. Panish, 1969 .

Zinc diffused GaP red electroluminescent diodes with 1.5 per cent external quantum efficiency

A. S. Jordan, H. Casey, O. Lorimor, 1972 .

The influence of the electrical properties of the solid phase on impurity incorparation during crystal growth

H. Casey, M. Panish, 1972 .

Single crystal electroluminescent materials

H. Casey, F. Trumbore, 1970 .

Specific contact resistance for alloyed Au‐Zn contacts on p‐type GaxIn1−xPyAs1−y

R. Logan, W. Augustyniak, H. Casey, 1980 .

Influence of bulk and surface properties on image sensing silicon diode arrays

H. C. Casey, H. Casey, M. Yamin, 1968 .

Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers

J. Muth, H. Casey, Ü. Özgür, 1999 .

Temperature Dependence of the Energy Gap in GaAs and GaP

H. C. Casey, Morton B. Panish, H. Casey, 1969 .

Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV

H. Casey, M. Panish, D. Sell, 1974 .

Dominance of surface recombination current in planar, Be‐implanted GaAs p‐n junctions prepared by rapid thermal annealing

J. Hutchby, H. Casey, D. Dietrich, 1987 .

Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructures

H. Casey, D. Sell, 1974 .

Concentration dependence of the refractive index for n ‐ and p ‐type GaAs between 1.2 and 1.8 eV

K. Wecht, H. Casey, D. Sell, 1974 .

Electrical properties of Ge‐doped p‐type AlxGa1−xAs

H. Casey, M. Panish, S. Zukotynski, 1979 .

Beam divergence of the emission from double-heterostructure injection lasers

H. C. Casey, Morton B. Panish, J. L. Merz, 1973 .

Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement

H. C. Casey, Morton B. Panish, H. Casey, 1973 .

The solid solubility limits of zinc in GaAs at 1000

H. Casey, M. Panish, 1967 .

Reduction of GaAs surface recombination velocity by chemical treatment

Bruce A. Parkinson, H. C. Casey, Adam Heller, 1980 .

Correlation of substitutional hydrogen to refractive index profiles in annealed proton‐exchanged Z‐ and X‐cut LiNbO3

S. Novak, H. Casey, J. Zavada, 1995 .

Reduction of surface recombination current in GaAs p‐n junctions

A. Cho, H. Casey, P. Foy, 1979 .

Low interface trap density for remote plasma deposited SiO2 on n‐type GaN

H. C. Casey, Bernd Keller, Steven P. DenBaars, 1996 .

Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers

B. Miller, H. Casey, E. Pinkas, 1973 .

Electron cyclotron resonance plasma process for InP passivation

H. Casey, E. Irene, Yuli Wang, 1993 .

Surface recombination current and emitter compositional grading in Npn and Pnp GaAs/AlxGa1−xAs heterojunction bipolar transistors

J. Hutchby, H. Casey, A. Springthorpe, 1989 .

CHAPTER 4 – HETEROJUNCTIONS

H. C. Casey, H. Casey, 1978 .

Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs on n‐type GaAs

E. H. Nicollian, D. Lang, A. Cho, 1979 .

Observation of radiative and nonradiative tunneling in GaAs/AlxGa1−xAs heterojunction bipolar transistors with compositionally graded base‐emitter heterojunctions

J. Hutchby, H. Casey, A. Springthorpe, 1989 .

DC performance of GaAs/Al/sub x/Ga/sub 1-x/As p-n-p heterojunction bipolar transistors grown by OMVPE

H. Casey, T. Lyon, P. M. Enquist, 1988 .

Evidence for low surface recombination velocity on n‐type InP

H. C. Casey, Ernest Buehler, H. Casey, 1977 .

Back‐surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular‐beam epitaxy

A. Cho, H. Casey, P. Foy, 1977 .

Radiative Tunneling in GaAs Abrupt Asymmetrical Junctions

H. Casey, D. Silversmith, 1969 .

Chapter 16 – Optical Sources

C. Burrus, Tingye Li, H. Casey, 1979 .

Cathodoluminescent Measurements in GaP (Zn, O)

H. Casey, J. S. Jayson, 1971 .

Electrical Properties of Sn‐Doped GaP

H. Casey, L. Dawson, H. Verleur, 1971 .

Thermal Ionization Energies of Cd and Zn in GaP

H. Casey, K. B. Wolfstirn, F. Ermanis, 1968 .

Analysis of hydrogen diffusion from proton‐exchanged layers in LiNbO3

S. Novak, H. Casey, J. Zavada, 1993 .

Current‐voltage and capacitance‐voltage behavior of high‐resistivity (AlxGa1−x)yIn1−yP on GaAs

G. B. Stringfellow, T. Y. Wang, H. Casey, 1989 .

Measurement of MIS capacitors with oxygen‐doped AlxGa1−xAs insulating layers on GaAs

E. H. Nicollian, D. Lang, A. Cho, 1978 .

CHAPTER 3 – STIMULATED EMISSION IN SEMICONDUCTORS

H. Casey, 1978 .

Heterostructure Lasers: Part B: Materials and Operating Characteristics

H. Casey, M. Panish, 2012 .

Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells

Ümit Özgür, H. C. Casey, Henry O. Everitt, 2000 .

Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors

H. Casey, H. Craig Casey, 1998 .

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

John F. Muth, H. C. Casey, Yun-Chorng Chang, 1999 .

Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedback

H. C. Casey, S. Somekh, Marc Ilegems, 1975 .

Nonconventional electron diffusion current in GaAs/AlxGa1−xAs N‐p‐n heterojunction bipolar transistors with heavily doped base layers

H. Casey, A. Springthorpe, T. Lyon, 1989 .