Hye Jin Lim

发表

Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy

Sunoh Kim, I. Han, Eunkyeom Kim, 1997 .

Tunable omnidirectional reflection bands and defect modes of a one-dimensional photonic band gap structure with liquid crystals

Hye Jin Lim, C. Kee, Y. Ha, 2001 .

Terahertz electromagnetic interference shielding using single-walled carbon nanotube flexible films

Hye Jin Lim, Doyeun Kim, Soonil Lee, 2008 .

Influence of quantum-well structural parameters on capacitance–voltage characteristics

Hye Jin Lim, C. R. Moon, 1999 .

Influence of dielectric deposition parameters on the In0.2Ga0.8As/GaAs quantum well intermixing by impurity-free vacancy disordering

Jin Dong Song, Jae Su Yu, Hye Jin Lim, 2002 .

Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries

Jae Su Yu, Y. T. Lee, Hye Jin Lim, 2005 .

Band line‐up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance‐voltage analysis

Yong-Hoon Cho, Byung-Doo Choe, Hye Jin Lim, 1996 .

Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy

In Kim, Byung-Doo Choe, Hye Jin Lim, 1995 .

Electron distribution and capacitance–voltage characteristics of n-doped quantum wells

Byung-Doo Choe, Hye Jin Lim, H. Shin, 1998 .

Tunable three-dimensional photonic crystals using semiconductors with varying free-carrier densities

Hye Jin Lim, C. Kee, Jae-Eun Kim, 2002 .

Hye Jin Lim, Jae-Eun Kim, H. Park, 1998 .

Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers

Hye Jin Lim, J. Yu, J. Song, 2002 .

Dependence of band gap energy shift of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiOx and SiNx capping layers

Hye Jin Lim, J. Yu, J. Song, 2002 .

Numerical analysis on the LDMOS with a double epi-layer and trench electrodes

M. Han, Hye Jin Lim, Sang-Koo Chung, 2001 .

Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with dielectric and InGaAs capping layers

Y. T. Lee, Hye Jin Lim, J. Yu, 2001 .

Interface properties of (NH4)2Sx‐treated In0.5Ga0.5P Schottky contacts

Hye Jin Lim, H. Kwon, B. Choe, 1995 .

Constant capacitance technique to study electrical instabilities in InP MIS provided by PECVD silicon nitride

I. Han, K. Kang, Hye Jin Lim, 1993 .

Study of charge trapping instabilities in a silicon‐nitride/indium‐phosphide metal‐insulator‐semiconductor structure by the constant‐capacitance method

I. Han, K. Kang, Hye Jin Lim, 1992 .

Deposition temperature dependence of electrical instability in an InP metal-insulator-semiconductor capacitor provided by plasma-enhanced chemical vapour deposited silicon nitride

M. B. Lee, I. Han, K. Kang, 1993 .

Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP

I. Han, K. Kang, Hye Jin Lim, 1994 .

Substrate and pretreatment dependence of Cu nucleation by metal–organic chemical vapor deposition

Hye Jin Lim, I. Park, K. Chung, 2002 .

Interface states generated by heat treatment in Au/InGaP Schottky diodes

Hye Jin Lim, Hyung Jae Lee, Junil Lee, 1992 .

Electrical characterization of partially relaxed InxGa1−xAs/GaAs multiple quantum well structures

Hye Jin Lim, Jeong Seok Lee, C. Moon, 1997 .

Propagation of p-polarized electromagnetic waves obliquely incident on stratified random media: Random phase approximation

Hye Jin Lim, F. Rotermund, Kihong Kim, 2007 .

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric single quantum wells

Hye Jin Lim, D. Kim, T. W. Kim, 2001 .

Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy

You Young Kim, Hye Jin Lim, Yong‐Hoon Cho, 1997 .

Duplexer using microwave photonic band gap structure

Hye Jin Lim, I. Park, S. Oh, 2000 .

Growth of CdTe epitaxial films on p‐InSb(111) by temperature gradient vapor transport deposition

Tae Whan Kim, K. Kang, Hye Jin Lim, 1992 .

Superior characteristics of organic chalcone single crystals as efficient nonlinear optical material

H. J. Ravindra, Hye Jin Lim, F. Rotermund, 2008 .

DYNAMICS OF ANTI-STOKES PHOTOLUMINESCENCE IN TYPE-II ALXGA1-XAS-GAINP2 HETEROSTRUCTURES : THE IMPORTANT ROLE OF LONG-LIVED CARRIERS NEAR THE INTERFACE

Hye Jin Lim, J. I. Lee, Yong‐Hoon Cho, 1997 .