Y. Feurprier

发表

Surface modification and etch product detection during reactive ion etching of InP in - plasma

Y. Feurprier, C. Cardinaud, G. Turban, 1997 .

High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether

Y. Feurprier, Y. Horiike, T. Ichiki, 2000 .

Influence of the gas mixture on the reactive ion etching of InP in CH4-H2 plasmas

Y. Feurprier, C. Cardinaud, G. Turban, 1997 .

Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off

Lei Sun, Andrew Metz, Matthew E. Colburn, 2016, SPIE Advanced Lithography.

Etch product identification during ? - ? RIE of InP using mass spectrometry

Y. Feurprier, C. Cardinaud, G. Turban, 1997 .

Microloading effect in ultrafine SiO2 hole/trench etching

Takanori Ichiki, Yasuhiro Horiike, Yannick Feurprier, 1999 .

Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis

Y. Feurprier, C. Cardinaud, G. Turban, 1998 .

Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma

Y. Feurprier, Y. Horiike, T. Ichiki, 1998 .

Reduction of Recombination Velocity on GaAs Surface by Ga‐S and As‐S Bond‐Related Surface States from ( NH 4 ) 2 S x Treatment

A. Scavennec, Y. Feurprier, C. Cardinaud, 1997 .

X-ray photoelectron spectroscopy damage characterization of reactively ion etched InP in CH4–H2 plasmas

Y. Feurprier, C. Cardinaud, G. Turban, 1998 .

Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

K. Nafus, Y. Feurprier, S. Nagahara, 2022, Advanced Lithography.

Recent advances in EUV patterning in preparation towards high-NA EUV

K. Nafus, M. Demand, Y. Feurprier, 2023, Advanced Lithography.

Self-aligned block technology: a step toward further scaling

Carlos Fonseca, Chris Wilson, Julien Ryckaert, 2017, Advanced Lithography.