C. Cardinaud

发表

Surface modification and etch product detection during reactive ion etching of InP in - plasma

Y. Feurprier, C. Cardinaud, G. Turban, 1997 .

Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies

Emmanuel Rinnert, Virginie Nazabal, Bruno Bureau, 2016 .

Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis

C. Cardinaud, C. Vallée, L. Rolland, 2000 .

Biofluid transport on hydrophobic plasma-deposited fluorocarbon films

K. Misiakos, C. Cardinaud, E. Gogolides, 2007 .

Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane

Angeliki Tserepi, Evangelos Gogolides, George P. Patsis, 2003 .

Plasma etching : principles, mechanisms, application to micro- and nano-technologies

P. Tessier, C. Cardinaud, M. Peignon, 2000 .

silicon by spontaneous reduction of diazonium salts

C. Cardinaud, A. Girard, N. Coulon, 2014 .

SiGe derivatization by spontaneous reduction of aryl diazonium salts

C. Cardinaud, A. Girard, T. Mohammed-Brahim, 2013 .

InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides

F. Pommereau, J. Leclercq, C. Cardinaud, 2006 .

InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides

F. Pommereau, J. Leclercq, C. Cardinaud, 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy

C. Cardinaud, G. Lempérière, M. Peignon, 1993 .

Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS

C. Cardinaud, E. Cambril, S. Guilet, 2015 .

Global Model of $\hbox{Cl}_{2}\hbox{/Ar}$ High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP

C. Cardinaud, A. Talneau, L. Gatilova, 2012, IEEE Transactions on Plasma Science.

Influence of Cadmium Composition on CH4–H2-Based Inductively Coupled Plasma Etching of Hg1−xCdxTe

C. Cardinaud, F. Boulard, J. Baylet, 2010 .

Effect of Ar and N2 addition on CH4–H2 based chemistry inductively coupled plasma etching of HgCdTe

C. Cardinaud, F. Boulard, J. Baylet, 2009 .

Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

C. Cardinaud, G. Destefanis, G. Cartry, 2005 .

Spectroscopic determination of the structure of amorphous nitrogenated carbon films

C. Cardinaud, G. Turban, S. Bhattacharyya, 1998 .

HiPIMS Ion Energy Distribution Measurements in Reactive Mode

C. Cardinaud, M. Djouadi, L. Le Brizoual, 2010, IEEE Transactions on Plasma Science.

Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

C. Cardinaud, G. Cartry, M. Peignon, 2006 .

X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films

C. Cardinaud, V. Nazabal, P. Němec, 2018 .

Tailoring the chemistry and the nano‐architecture of organic thin films using cold plasma processes

P. Tessier, E. Gautron, C. Cardinaud, 2017 .

Structure of nitrogenated carbon films prepared from acetylene and nitrogen mixture in electron cyclotron resonance plasma

C. Cardinaud, G. Turban, S. Bhattacharyya, 2000 .

Studies on structural properties of a-CN:H films prepared in electron cyclotron resonance plasma

C. Cardinaud, G. Turban, C. Vallée, 1999 .

Studies on structural properties of amorphous nitrogenated carbon films from electron energy loss, ellipsometry, Auger electron spectroscopy, and electron-spin resonance

C. Cardinaud, G. Turban, O. Chauvet, 1999 .

Electronic structure of amorphous Si1−xGex: H alloys studied by soft X-ray and photoelectron spectroscopies

C. Cardinaud, C. Sénémaud, G. Villela, 1986 .

Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors

C. Cardinaud, M. Sergent, B. Bureau, 2017, Scientific Reports.

Network connectivity and structural defects in a-C:H films

C. Cardinaud, K. Zellama, L. Chahed, 1995 .

High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms

C. Cardinaud, D. Eon, G. Cartry, 2007 .

Modeling of C4F8 inductively coupled plasmas: effects of high RF power on the plasma electrical properties

C. Cardinaud, F. Roqueta, A. Girard, 2019, Plasma Sources Science and Technology.

Etching of low-k materials in high density fluorocarbon plasma

C. Cardinaud, D. Eon, G. Cartry, 2004 .

Electronic and optical investigation of hydrogenated amorphous carbon (a-C:H) by X-ray photoemission spectroscopy and spectroscopic ellipsometry

C. Cardinaud, G. Turban, Soonil Lee, 2000 .

A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer

C. Cardinaud, G. Cartry, V. Raballand, 2007 .

Porous SiOCH, SiCH and SiO2 Etching in High Density Fluorocarbon Plasma with a Pulsed Bias

C. Cardinaud, G. Cartry, V. Raballand, 2007 .

Towards a reliable assessment of charging effects during surface analysis: Accurate spectral shapes of ZrO2 and Pd/ZrO2 via X-ray Photoelectron Spectroscopy

C. Cardinaud, J. Baltrusaitis, V. Fernandez, 2021 .

X-ray photoelectron spectroscopy analyses of plasma-deposited GeSex films

C. Cardinaud, G. Turban, M. Ribes, 1991 .

Mechanistic studies of the initial stages of etching of Si and SiO2 in a CHF3 plasma

C. Cardinaud, G. Turban, 1990 .

Low temperature plasma carbon nanotubes growth on patterned catalyst

C. Cardinaud, M. Besland, T. Minea, 2006 .

Chapter 14 – Surface Modification of Inorganic Materials by Fluorination Treatments

C. Cardinaud, A. Tressaud, 2000 .

Surface Reactivity of Silicon and Germanium in CF 4 -O 2 Reactive Ion Etching

C. Cardinaud, G. Turban, A. Campo, 1993 .

Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution

C. Cardinaud, A. Rhallabi, M. Fernandez, 2013 .

Influence of the gas mixture on the reactive ion etching of InP in CH4-H2 plasmas

Y. Feurprier, C. Cardinaud, G. Turban, 1997 .

Polyhedral Oligomeric Silsesquioxane (POSS) Based Resists: Material Design Challenges and Lithographic Evaluation at 157 nm

C. Cardinaud, E. Gogolides, E. Tegou, 2004 .

Plasma oxidation of polyhedral oligomeric silsesquioxane polymers

C. Cardinaud, E. Gogolides, N. Vourdas, 2006 .

Etch product identification during ? - ? RIE of InP using mass spectrometry

Y. Feurprier, C. Cardinaud, G. Turban, 1997 .

Surface segregation of photoresist copolymers containing polyhedral oligomeric silsesquioxanes studied by x-ray photoelectron spectroscopya)

C. Cardinaud, E. Gogolides, E. Tegou, 2004 .

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Remi Dussart, Christophe Cardinaud, Pierre Ranson, 2009 .

Plasma Etching of Poly(dimethylsiloxane): Roughness Formation, Mechanism, Control, and Application in the Fabrication of Microfluidic Structures

Angeliki Tserepi, Evangelos Gogolides, George Kokkoris, 2013 .

Electron-and ion-assisted silicon surface chemistry in a DC-excited CHF3 plasma

C. Cardinaud, G. Turban, J. Grandchamp, 1991 .

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

C. Cardinaud, A. Girard, N. Coulon, 2014 .

Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment

C. Cardinaud, 2018, Comptes Rendus Chimie.

Chemical etching of thin SiOxCyHz films by post-deposition exposure to oxygen plasma

C. Cardinaud, G. Turban, A. Goullet, 1999 .

Contamination of Silicon Surfaces Exposed to CHF 3 Plasmas An XPS Study of the Film and the Film‐Surface Interface

C. Cardinaud, G. Turban, B. Grolleau, 1988 .

Ion energy distributions measured inside a high-voltage cathode in a BF3 pulsed dc plasma used for plasma doping: experiments and ab initio calculations

C. Cardinaud, G. Cartry, Y. Ferro, 2012 .

Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO2

C. Cardinaud, G. Turban, D. Eon, 2002 .

Modelling of fluorine based high density plasma for the etching of silica glasses

Ahmed Rhallabi, Christophe Cardinaud, C. Cardinaud, 2011 .

Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor

Christine Charles, Antoine Goullet, Christophe Cardinaud, 1993 .

H atom surface loss kinetics in pulsed inductively coupled plasmas

C. Cardinaud, L. Le Brizoual, A. Granier, 2013 .

Plasma diagnostics in pulsed plasma doping (P/sup 2/LAD) system

D. Lenoble, C. Cardinaud, A. Grouillet, 2004, IEEE Transactions on Plasma Science.

Ion energy distributions in a pulsed plasma doping system

D. Lenoble, C. Cardinaud, A. Grouillet, 2005 .

Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas

C. Cardinaud, V. Nazabal, A. Rhallabi, 2020, Plasma Sources Science and Technology.

Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis

Y. Feurprier, C. Cardinaud, G. Turban, 1998 .

Mechanisms of oxygen plasma nanotexturing of organic polymer surfaces: from stable super hydrophilic to super hydrophobic surfaces.

A Tserepi, C. Cardinaud, E. Gogolides, 2009, Langmuir : the ACS journal of surfaces and colloids.

Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

Charlie Gosse, Ahmed Rhallabi, Christophe Cardinaud, 2010 .

Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge

C. Cardinaud, A. Rhallabi, J. Landesman, 2011 .

Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy

C. Cardinaud, O. Durand, M. Hugon, 2008 .

Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices

T. Chikyow, E. Handick, L. Arzel, 2019, Sustainable Energy & Fuels.

Reduction of Recombination Velocity on GaAs Surface by Ga‐S and As‐S Bond‐Related Surface States from ( NH 4 ) 2 S x Treatment

A. Scavennec, Y. Feurprier, C. Cardinaud, 1997 .

Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma

Ahmed Rhallabi, Christophe Cardinaud, Luís L Alves, 2009 .

SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer

C. Cardinaud, G. Turban, Ch. Cardinaud, 2000 .

Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H2 and influence of the residence time

Gilles Cartry, C. Cardinaud, G. Cartry, 2002 .

X-ray photoelectron spectroscopy damage characterization of reactively ion etched InP in CH4–H2 plasmas

Y. Feurprier, C. Cardinaud, G. Turban, 1998 .

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Emmanuel Rinnert, Florent Colas, Virginie Nazabal, 2013 .

The role of physisorption in the cryogenic etching process of silicon

C. Cardinaud, A. Girard, P. Lefaucheux, 2019, Japanese Journal of Applied Physics.

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

C. Cardinaud, G. Patriarche, T. Chevolleau, 2012 .

An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures

P. Tessier, C. Cardinaud, T. Chevolleau, 1999 .

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

P. Tessier, C. Cardinaud, G. Turban, 1997 .

Silicon damage and residue overlayer caused by rie and ribe processes with CHF3

P. Scheiblin, C. Cardinaud, G. Turban, 1989 .

Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Gilles Cartry, C. Cardinaud, G. Cartry, 2005 .

Quantitative Auger Electron Spectroscopic Analysis of Hg1−xCdxTe

C. Cardinaud, J. Baylet, A. Gaucher, 2014, Journal of Electronic Materials.

Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas

C. Cardinaud, H. Kim, A. Girard, 2022, Journal of Vacuum Science & Technology A.

Roughening of porous SiCOH materials in fluorocarbon plasmas

C. Cardinaud, N. Possémé, T. Chevolleau, 2010 .

A Kinetic Study of Reactive Ion Etching of Tungsten in SF 6 / O 2 RF Plasmas

C. Cardinaud, M. Peignon, Guy Turban, 1993 .

Description of the electronic density of states of a-C:H films with low and high optical gaps

C. Cardinaud, A. Gheorghiu, C. Sénémaud, 1995 .

Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6/Ar plasmas

C. Cardinaud, V. Nazabal, P. Němec, 2021 .

X‐ray photoelectron study of the reactive ion etching of SixGe1−x alloys in SF6 plasmas

C. Charles, R. Boswell, C. Cardinaud, 1996 .

Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD

C. Cardinaud, J. Duvail, M. Besland, 2007 .

Plasma doping implant depth profile calculation based on ion energy distribution measurements

D. Lenoble, C. Cardinaud, G. Cartry, 2006 .

PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application

S. Barnola, R. Tiron, C. Navarro, 2016, SPIE Advanced Lithography.

X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma

C. Cardinaud, E. Cambril, S. Guilet, 2014 .

Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma

C. Cardinaud, V. Nazabal, P. Němec, 2023, Plasma Sources Science and Technology.

Modeling of inductively coupled plasma Ar/Cl2/N2 plasma discharge: Effect of N2 on the plasma properties

Ahmed Rhallabi, Christophe Cardinaud, C. Cardinaud, 2013 .

Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection

C. Cardinaud, A. Girard, L. Pichon, 2018, Sensors and Actuators B: Chemical.

Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma

C. Cardinaud, G. Henrion, S. Guilet, 2021, Plasma Sources Science and Technology.

Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas

C. Cardinaud, A. Girard, F. Boulard, 2020, Journal of Vacuum Science & Technology A.

Electrical Properties and Interfacial Characteristics of RuO2 ∕ HfAlO x ∕ SiON ∕ Si and RuO2 ∕ LaAlO3 ∕ SiON ∕ Si Capacitors

C. Cardinaud, O. Durand, I. Baumvol, 2008 .

Investigation of Si and Ge etching mechanisms in radiofrequency CF2-O2 plasma based on surface reactivities

C. Cardinaud, G. Turban, Ch. Cardinaud, 1995 .

Comparison of etching processes of silicon and germanium in SF6–O2 radio‐frequency plasma

C. Cardinaud, G. Turban, Ch. Cardinaud, 1995 .

Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions

R. Rooyackers, T. Skotnicki, N. Collaert, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..