K. Mosig

Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress

A. Kerber, M. Kerber, T. Pompl, 2006, IEEE Electron Device Letters.

Integration of porous ultra low-k dielectric with CVD barriers

H. Cox, K. Mosig, K. Mosig, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Voiding in ultra porous low-k materials proposed mechanism, detection and possible solutions

R. Augur, K. Mosig, P. Gillespie, 2002, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).

Investigation of the equilibrium concentration of lattice vacancies in silver and dilute silver-tin alloys with a differential dilatometer

K. Mosig, T. Hehenkamp, J. Wolff, 1992 .

Determination of Absolute Vacancy Concentration and Vacancy-Impurity Interaction Energies in Dilute Silver and Copper Alloys

K. Mosig, T. Hehenkamp, J. Wolff, 1997 .

Integration challenges of porous ultra low-k spin-on dielectrics

R. Augur, R. Augur, K. Mosig, 2002 .

Electrical assessment of copper damascene interconnects down to sub-50 nm feature sizes

Manfred Engelhardt, G. Steinlesberger, Emmerich Bertagnolli, 2002 .