B. de Jaeger

发表

Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology

M. Heyns, G. Eneman, J. Mitard, 2009, IEEE Transactions on Electron Devices.

High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

M. Heyns, G. Eneman, B. de Jaeger, 2007, IEEE Transactions on Electron Devices.

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

A. Hikavyy, C. Merckling, N. Waldron, 2011, 2011 International Electron Devices Meeting.

Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

R. Loo, M. Caymax, T. Vandeweyer, 2008, 2008 IEEE International Electron Devices Meeting.

High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants

T. Vandeweyer, M. Heyns, G. Eneman, 2009, IEEE Electron Device Letters.

High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

C. Merckling, M. Caymax, M. Heyns, 2010, IEEE Electron Device Letters.

Germanium for advanced CMOS anno 2009: a SWOT analysis

C. Merckling, R. Loo, M. Caymax, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

High performance Ge pMOS devices using a Si-compatible process flow

K. Opsomer, L. Ragnarsson, B. Kaczer, 2006, 2006 International Electron Devices Meeting.

Monte Carlo simulation study of hole mobility in germanium MOS inversion layers

A. Asenov, C. Riddet, J. Mitard, 2010, 2010 14th International Workshop on Computational Electronics.

Substrate bias effect on Ge pMOSFETs with and without halo

J. Mitard, E. Simoen, B. de Jaeger, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack

A. Mercha, B. Kaczer, E. Simoen, 2007, IEEE Electron Device Letters.

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

S. Decoutere, M. Tack, P. Moens, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

Ge and III/V devices for advanced CMOS

C. Merckling, G. Pourtois, C. Adelmann, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Chi On Chui, G. Groeseneken, M. Heyns, 2008, IEEE Transactions on Electron Devices.

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$n Junctions

E. Simoen, C. Claeys, G. Hellings, 2008, IEEE Transactions on Electron Devices.

On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions

E. Simoen, C. Claeys, G. Eneman, 2009, IEEE Electron Device Letters.

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

S. Decoutere, B. de Jaeger, L. Trojman, 2018, IEEE Transactions on Electron Devices.

Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

Geert Hellings, Jerome Mitard, Anne Vandooren, 2010, Advanced Lithography.

Reliability in GaN-based devices for power applications

S. Decoutere, B. de Jaeger, L. Trojman, 2018, 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM).

Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

S. Decoutere, B. de Jaeger, L. Trojman, 2019, IEEE Transactions on Electron Devices.

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

S. Decoutere, E. Simoen, B. de Jaeger, 2021, physica status solidi (a).

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, Microelectronics Reliability.

Device breakdown optimization of AhOs/GaN MISFETs

S. Decoutere, B. de Jaeger, D. Wellekens, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

S. Decoutere, A. Tallarico, G. Groeseneken, 2016, IEEE Transactions on Electron Devices.

Record low contact resistivity to n-type Ge for CMOS and memory applications

E. Rosseel, B. Douhard, H. Bender, 2010, 2010 International Electron Devices Meeting.

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013 .

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

S. Decoutere, M. Van Hove, D. Wellekens, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

B. Parvais, E. Simoen, N. Waldron, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

L. Pantisano, E. Simoen, M. Nafria, 2009, IEEE Transactions on Electron Devices.

Germanium: The Past and Possibly a Future Material for Microelectronics

K. Opsomer, G. Pourtois, A. Satta, 2007, ECS Transactions.

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Ge deep sub-micron HiK/MG pFETs with superior drive compared to Si HiK/MG state-of-the-art reference

B. Kaczer, M. Heyns, M. Meuris, 2006, 2006 International SiGe Technology and Device Meeting.

Source/Drain junction integration issues in submicron Ge MOSFETs

K. Opsomer, A. Satta, G. Eneman, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Analysis of junction leakage in advanced germanium P+/n junctions

E. Simoen, C. Claeys, G. Eneman, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

S. Decoutere, B. de Jaeger, N. Ronchi, 2015 .

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies

A. Vais, N. Collaert, N. Horiguchi, 2019, Advanced Lithography.

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, IEEE Electron Device Letters.