A. Suzuki

发表

Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

Tsutomu Araki, A. Suzuki, Masamitsu Kaneko, 2008, SPIE OPTO.

Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN/GaN high electron mobility transistors

M. Kurouchi, Akihiro Hinoki, A. Suzuki, 2007 .

Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors

M. Kurouchi, Akihiro Hinoki, A. Suzuki, 2007 .

Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy

N. Teraguchi, A. Suzuki, T. Araki, 2001 .

Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

Hajime Asahi, Yasushi Nanishi, N. Teraguchi, 2002 .

Emission spectra from AlN and GaN doped with rare earth elements

N. Teraguchi, M. Kim, A. Suzuki, 2006 .

Growth of AlN films on SiC substrates by RF-MBE and RF-MEE

N. Teraguchi, A. Suzuki, T. Araki, 2001 .

The c-axis and a-axis orientations in InN grown directly on (0001) sapphire substrate by rf-MBE

N. Teraguchi, A. Suzuki, Y. Nanishi, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

N. Teraguchi, A. Suzuki, T. Araki, 2001 .

Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF‐MBE

N. Teraguchi, A. Suzuki, T. Araki, 2002 .

Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy

A. Suzuki, T. Araki, Y. Nanishi, 2007 .

The effect of substrate polarity on the growth of InN by RF-MBE

A. Suzuki, T. Araki, Y. Nanishi, 2004 .

Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE

A. Suzuki, T. Araki, Y. Nanishi, 2003 .

Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

A. Suzuki, T. Araki, Y. Nanishi, 2003 .

Thermal and chemical stabilities of In‐ and N‐polar InN surfaces

A. Suzuki, T. Araki, Y. Nanishi, 2007 .

Growth of high-quality InN using low-temperature intermediate layers by RF-MBE

N. Teraguchi, A. Suzuki, T. Araki, 2002 .

Electrical Properties of InN Grown by RF-MBE

N. Teraguchi, A. Suzuki, T. Araki, 2000 .

Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure

A. Suzuki, T. Araki, Y. Nanishi, 2005 .

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

A. Suzuki, T. Araki, Y. Nanishi, 2003 .

Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro‐Raman spectroscopy and device simulation

A. Suzuki, T. Araki, Y. Nanishi, 2007 .

Effect of sapphire substrate nitridation on determining rotation domain in GaN growth

N. Teraguchi, A. Suzuki, T. Araki, 2002 .

Growth and properties of In‐rich InGaN films grown on (0001) sapphire by RF‐MBE

Masahito Kurouchi, Tomohiro Yamaguchi, Yasushi Nanishi, 2004 .

Optical Properties of InxGa1—xN with Entire Alloy Composition on InN Buffer Layer Grown by RF‐MBE

Yoshiki Saito, Tomohiro Yamaguchi, Yasushi Nanishi, 2002 .

Growth of high-quality InN films by insertion of high-temperature InN buffer layer

M. Kurouchi, A. Suzuki, T. Araki, 2005 .

MBE‐growth, characterization and properties of InN and InGaN

A. Suzuki, T. Araki, Y. Nanishi, 2003 .

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

A. Suzuki, T. Araki, Y. Nanishi, 2009 .

Study of epitaxial relationship in InN growth on sapphire (0001) by RF-MBE

N. Teraguchi, A. Suzuki, T. Araki, 2001 .

Polarity of High‐Quality Indium Nitride Grown by RF Molecular Beam Epitaxy

N. Teraguchi, A. Suzuki, T. Araki, 2001 .