J. Pamulapati

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All-optical integrated devices using multiquantum well disordering

Jagadeesh Pamulapati, Mitra Dutta, Patrick LiKamWa, 1995, Defense, Security, and Sensing.

The controlled disordering of quantum wells using surface oxidation

M. Dutta, S. Shi, J. Pamulapati, 1994 .

Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler

Pallab Bhattacharya, Jagadeesh Pamulapati, Paul R. Berger, 1988 .

Ultrafast all-optical multiple quantum well integrated optic switch

P. Newman, P. LiKamWa, J. Pamulapati, 2000 .

Area‐selective disordering of multiple quantum well structures and its applications to all‐optical devices

P. LiKamWa, J. Pamulapati, A. Kan'an, 1996 .

Refractive index and electro‐optic effect in compressive and tensile strained quantum wells

P. Bhattacharya, M. Ludowise, J. Pamulapati, 1991 .

Electro-optic effect in strained and lattice matched multiquantum well structures-role of excitonic resonances

P. Bhattacharya, M. Ludowise, J. Pamulapati, 1990 .

Lossless 1 x 2 optical switch monolithically integrated on a passive active resonant coupler (PARC) platform

J. Pamulapati, M. Ott, M. Dagenais, 2000, IEEE Photonics Technology Letters.

High-gain pseudomorphic InGaAs base ballistic hot-electron device

P. Bhattacharya, K. Seo, J. Pamulapati, 1989, IEEE Electron Device Letters.

Generation of sub-40 fs pulses from a mode-locked dual-gain-media Nd:glass laser

P. Newman, J. Pamulapati, M. Wraback, 2002 .

Fermi level pinning in low-temperature molecular beam epitaxial GaAs

Hongen Shen, M. Dutta, J. Pamulapati, 1992 .

All-optical devices realized by the post-growth processing of multiquantum-well structures

Jagadeesh Pamulapati, Mitra Dutta, Patrick LiKamWa, 1997, Photonics West.

International conference on metallurgical coatings and thin films

P. G. Snyder, P. Bhattacharya, J. Pamulapati, 1991 .

Integrated All-Optical Devices Fabricated Using Area-Selective Disordering of Multiple Quantum Well Structures

M. Dutta, P. LiKamWa, J. Pamulapati, 1996 .

Photoreflectance study of H2S plasma-passivated GaAs surface

F. Ren, Hongen Shen, J. Pamulapati, 1999 .

Mode expanded optical switch in resonant vertically coupled waveguides

J. Pamulapati, R. Bartolo, M. Dagenais, 1999, IEEE Photonics Technology Letters.

Novel Ultra-low Voltage Expanded Mode Modulator Monolithically Integrated with a Laser using Single-Epitaxial Growth

J. Pamulapati, M. Dagenais, F. Johnson, 1999 .

Interplay of Strain, Growth Kinetics and Surface Bonding in Growth Modes and Dislocation Generation in Strained Heteroepitaxy

P. Bhattacharya, J. Pamulapati, Jasprit Singh, 1990 .

Investigation of near interface properties in semi-insulating InP substrates with epitaxial grown InGaAs and InAlAs by photoreflectance

B. R. Bennett, M. Dutta, J. Pamulapati, 1993 .

The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Paul R. Berger, D. Pavlidis, G. Ng, 1990 .

1.7-ps consecutive switching in an integrated multiple-quantum-well Y-junction optical switch

P. LiKamWa, J. Pamulapati, A. Kan'an, 1996, IEEE Photonics Technology Letters.

An integrated multiple quantum well Y-junction optical switch for ultrafast consecutive switching

M. Dutta, P. LiKamWa, J. Pamulapati, 1996, Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.

Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates

J. Pamulapati, R. Sieg, S. Alterovitz, 1993 .

this system. Studies of InGaAs/GaAs

M. Dutta, J. Pamulapati, 2017 .

Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure

S. T. Lee, P. Newman, M. Dutta, 1993 .

Properties of Epitaxial ZnO Thin Films for GaN and Related Applications

J. Pamulapati, C. Gorla, M. Wraback, 1999 .

Piezoreflectance characterization of double‐barrier resonant tunneling structures

P. Bhattacharya, J. Pamulapati, R. Tober, 1988 .

Low‐loss, single‐mode In0.53Ga0.47As/In0.52Al0.48As/InP optical waveguides fabricated by Zn‐induced impurity‐induced layer disordering

P. Bhattacharya, J. Pamulapati, R. Lai, 1991 .

Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence

P. Newman, J. Pamulapati, F. Pollak, 2000 .

Optical properties of high‐quality InGaAs/InAlAs multiple quantum wells

P. Bhattacharya, G. Mourou, J. Pamulapati, 1991 .

1.55 μm Er-doped GaN LED

Jagadeesh Pamulapati, S. J. Pearton, John M. Zavada, 1999 .

Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system

Jagadeesh Pamulapati, Jasprit Singh, Paul R. Berger, 1996 .

Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques

J. Pamulapati, Jasprit Singh, J. Loehr, 1992 .

High speed modulation of InP-based strained quantum well lasers

P. Bhattacharya, J. Pamulapati, G. Munns, 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers

P. Bhattacharya, J. Pamulapati, J. Singh, 1989, Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,.

In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures

J. Pamulapati, Jasprit Singh, M. Jaffe, 1989 .

Sub-picosecond Photoconductivity in III-V compound semiconductors using Low Temperature MBE growth techniques

P. Bhattacharya, G. Mourou, J. Pamulapati, 1990, Ultrafast Phenomena.

Traps in molecular‐beam epitaxial In0.53(GaxAl1−x)0.47As/InP

Albert Chin, Pallab Bhattacharya, Jagadeesh Pamulapati, 1990 .

Photoluminescence characterization of nonradiative recombination in carbon‐doped GaAs

P. Wright, M. Dutta, J. Pamulapati, 1992 .

Liquid phase epitaxial growth of InGaAs on InP using rare‐earth‐treated melts

Paul R. Berger, R. Lareau, J. Pamulapati, 1996 .

Creation of In-Plane Anisotropic Strain in GaAs/A1 x Ga 1−x As Multiple Quantum Well Structures

H. Kuo, M. Dutta, J. Pamulapati, 1993 .

Alignment-tolerant structures for ease of optoelectronic packaging

Paul H. Shen, Jagadeesh Pamulapati, Mario Dagenais, 1999, Photonics West.

Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures

P. Bhattacharya, J. Pamulapati, J. Oh, 1989 .

Lateral carrier sweep-out in multi-quantum well optoelectronic devices

M. Dutta, J. Pamulapati, P. Cooke, 1995, LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings.

Photoreflectance Characterization of the Semi-Insulating InP Substrate Interface with InGaAs and InAlAs Epilayers

B. R. Bennett, M. Dutta, J. Pamulapati, 1992 .

Polarization-independent waveguide modulators using 1.57 /spl mu/m-strained InGaAs-InGaAsP quantum wells

J. Pamulapati, R. Bartolo, M. Dagenais, 1999 .

Polarization-independent waveguide modulators using 1.57-μm /spl delta/-strained InGaAs-InGaAsP quantum wells

J. Pamulapati, R. Bartolo, M. Dagenais, 1999, IEEE Photonics Technology Letters.

Multi-quantum-well zero-gap directional coupler with disordered branching waveguides

Jagadeesh Pamulapati, Mitra Dutta, S. Shi, 1995 .

Femtosecond studies of excitonic optical non-linearities in GaAs/AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain

P. Newman, M. Dutta, J. Pamulapati, 1994 .

Normal incidence high contrast multiple quantum well light modulator based on polarization rotation

Hongen Shen, Jagadeesh Pamulapati, Michael Wraback, 1993 .

Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP

P. Bhattacharya, G. Mourou, J. Pamulapati, 1990 .