Toru Nagashima

发表

High-speed epitaxial growth of AlN above 1200∘C by hydride vapor phase epitaxy

Toru Nagashima, M. Harada, H. Yanagi, 2007 .

Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, J. Kotani, 2020, Journal of Crystal Growth.

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Toru Nagashima, Y. Kumagai, A. Koukitu, 2016 .

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Nagashima, Y. Kumagai, A. Koukitu, 2012 .

Stimulated emission mechanism of aluminum nitride

Toru Nagashima, M. Funato, Y. Kawakami, 2022, Physical Review B.

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

Toru Nagashima, M. Harada, H. Yanagi, 2012 .

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates

Toru Nagashima, H. Yanagi, Y. Kumagai, 2012 .

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Toru Nagashima, Y. Kumagai, A. Koukitu, 2012 .

Relationship between formation conditions, properties, and crystallite size of boehmite.

Atsuo Yasumori, Kiyoshi Okada, Toru Nagashima, 2002, Journal of colloid and interface science.

Effect of crystallite size of boehmite on sinterability of alumina ceramics

Toru Nagashima, Y. Kameshima, K. Okada, 2003 .

The influence of point defects on the thermal conductivity of AlN crystals

Toru Nagashima, Y. Kumagai, Z. Sitar, 2018 .

On the origin of the 265 nm absorption band in AlN bulk crystals

Toru Kinoshita, Rafael Dalmau, Baxter Moody, 2012 .

Effect of crystallite size on the thermal phase change and porous properties of boehmite.

Toru Nagashima, Y. Kameshima, K. Okada, 2002, Journal of colloid and interface science.

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Toru Nagashima, Hideshi Nishikawa, M. Hourai, 2018, physica status solidi (a).

Thermal conductivity of single-crystalline AlN

Toru Nagashima, Y. Kumagai, Z. Sitar, 2018, Applied Physics Express.

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Kinoshita, Baxter Moody, Yoshinao Kumagai, 2013 .

Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate

Toru Nagashima, Y. Kumagai, A. Koukitu, 2007 .

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Benjamin E. Gaddy, Toru Nagashima, Y. Kumagai, 2014 .

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Benjamin E. Gaddy, Toru Nagashima, Y. Kumagai, 2013 .

Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire

Toru Nagashima, Y. Kumagai, A. Koukitu, 2008 .

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Toru Nagashima, Y. Kumagai, A. Koukitu, 2010 .

Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

Toru Nagashima, M. Harada, H. Yanagi, 2007 .

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, A. Koukitu, 2015 .

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

H. Okamoto, Toru Nagashima, Y. Kumagai, 2012 .

Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, M. Boćkowski, 2022, Applied Physics Express.

Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

Toru Nagashima, Y. Kumagai, B. Monemar, 2020 .

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers

Toru Nagashima, Y. Kumagai, M. Boćkowski, 2020, physica status solidi (a).