A. Koukitu

发表

High-speed epitaxial growth of AlN above 1200∘C by hydride vapor phase epitaxy

Toru Nagashima, M. Harada, H. Yanagi, 2007 .

Growth and characterization of freestanding GaN substrates

Y. Kumagai, A. Koukitu, M. Ueno, 2002 .

Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN

Y. Kumagai, A. Koukitu, H. Murakami, 2006 .

Recent progress in Ga2O3 power devices

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

Effect of adding Pd nanoparticles to dimercaptan-polyaniline cathodes for lithium polymer battery

N. Oyama, A. Koukitu, O. Hatozaki, 2004 .

Electrochemical behavior of the polyaniline-organosulfur composite film containing Ag nanoparticles

N. Oyama, A. Koukitu, O. Hatozaki, 2003 .

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors

Yoshinao Kumagai, Kensaku Motoki, Hitoshi Kasai, 2001 .

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3

A. Koukitu, K. Iso, H. Murakami, 2017 .

Thick nonpolar m-plane and semipolar ( 10 1 1 ) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3

A. Koukitu, K. Iso, H. Murakami, 2017 .

Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl 3 precursor

Y. Kumagai, A. Koukitu, H. Murakami, 2016 .

High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, B. Monemar, 2015 .

Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

A. Koukitu, T. Ito, Y. Kangawa, 2014 .

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Toru Nagashima, Y. Kumagai, A. Koukitu, 2016 .

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Nagashima, Y. Kumagai, A. Koukitu, 2012 .

Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2014 .

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2016 .

Nucleation and coalescence behavior for epitaxial ZnO layers on ZnO/sapphire templates grown by halide vapor phase epitaxy

Yoshinao Kumagai, Tetsuhiro Tanabe, Akinori Koukitu, 2009 .

Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers

Y. Kumagai, A. Koukitu, P. Holtz, 2012 .

Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments

Y. Kumagai, A. Koukitu, T. Fujii, 2011 .

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Solid Composition Control of MgxZn1-xO in Halide Vapor Phase Epitaxy

Y. Kumagai, A. Koukitu, T. Fujii, 2010 .

Growth of ZnO crystal on sapphire and nitridated sapphire substrates at 1000 °C by halide vapor phase epitaxy

Y. Kumagai, A. Koukitu, T. Fujii, 2010 .

Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl2 and H2O source gases

Y. Kumagai, A. Koukitu, T. Fujii, 2010 .

Halide Vapor Phase Epitaxy of MgxZn1-xO Layers on Zn-Polar ZnO Substrates

Y. Kumagai, A. Koukitu, T. Fujii, 2009 .

Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

A. Koukitu, T. Ito, Y. Kangawa, 2012 .

Growth of III-Nitrides with Halide Vapor Phase Epitaxy (HVPE)

Yoshinao Kumagai, Carl Hemmingsson, Akinori Koukitu, 2010 .

Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System

A. Koukitu, H. Seki, 1977 .

Growth of InN at High Temperature by Halide Vapor Phase Epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1997 .

Vapor phase epitaxy of InN using InCl and InCl3 sources

A. Koukitu, N. Takahashi, Jun Ogasawara, 1997 .

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1−xN using GaCl3 and InCl3

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN

Y. Kumagai, A. Koukitu, H. Murakami, 2002 .

Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl2

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Preparation and characterization of Y-system superconducting thin films by mist microwave-plasma chemical vapour deposition

A. Koukitu, H. Seki, N. Takahashi, 1996, Journal of Materials Science.

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

Y. Kumagai, A. Koukitu, Y. Aoyagi, 2007 .

Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3

A. Koukitu, K. Iso, H. Murakami, 2019, Japanese Journal of Applied Physics.

Electrochemical and chemical interactions between polyaniline and palladium nanoparticles

N. Oyama, A. Koukitu, O. Hatozaki, 2004 .

Influence of substrate polarity of (0 0 0 1) and (0 0 0 1¯)GaN surfaces on hydride vapor-phase epitaxy of InN

Y. Kumagai, A. Koukitu, H. Murakami, 2010 .

Influence of hydrogen input partial pressure on the polarity of InN on GaAs (1 1 1)A grown by metalorganic vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2008 .

High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N2

Y. Kumagai, A. Koukitu, H. Murakami, 2013 .

Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)

Y. Kumagai, A. Koukitu, 2001 .

Surface polarity dependence of decomposition and growth of GaN studied using in situ gravimetric monitoring

Y. Kumagai, A. Koukitu, M. Mayumi, 2002 .

Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALE

A. Koukitu, H. Seki, 1989 .

In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (0001̄) Surfaces Using Freestanding GaN

Y. Kumagai, A. Koukitu, M. Mayumi, 2001 .

In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface

Y. Kumagai, A. Koukitu, K. Takemoto, 2000 .

Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides

A. Koukitu, Tetsuya Taki, H. Seki, 1999 .

Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer

A. Koukitu, Y. Kangawa, K. Kakimoto, 2007 .

Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen

Y. Kumagai, A. Koukitu, Y. Kangawa, 2003 .

Comparison of GaN growth processes on GaAs(1 1 1)A and (1 1 1)B substrates studied by ab initio calculation

Y. Kumagai, A. Koukitu, T. Irisawa, 2002 .

Growth and characterization of YBa2Cu3Ox and NdBa2Cu3Ox superconducting thin films by mist microwave-plasma chemical vapor deposition using a CeO2 buffer layer

A. Koukitu, H. Seki, N. Takahashi, 2000 .

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

Toru Nagashima, M. Harada, H. Yanagi, 2012 .

Thermodynamic analysis on HVPE growth of InGaN ternary alloy

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Thermodynamic analysis of AlGaN HVPE growth

Y. Kumagai, A. Koukitu, Y. Kangawa, 2005 .

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates

Toru Nagashima, H. Yanagi, Y. Kumagai, 2012 .

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Toru Nagashima, Y. Kumagai, A. Koukitu, 2012 .

In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methods

A. Koukitu, H. Seki, N. Takahashi, 1995 .

MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices

A. Koukitu, H. Nakanishi, Y. Abe, 2009 .

Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015, 2015 73rd Annual Device Research Conference (DRC).

Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2

Y. Kumagai, A. Koukitu, K. Takada, 2016 .

Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (1 1 1) Si substrates

A. Koukitu, H. Murakami, Takayoshi Yamane, 2008 .

Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source

A. Koukitu, K. Iso, H. Murakami, 2017 .

Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source

A. Koukitu, K. Iso, H. Murakami, 2017, Journal of Electronic Materials.

Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2016 .

A new system for growing thick InN layers by hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of Alx Ga1–xN

Y. Kumagai, A. Koukitu, H. Murakami, 2006 .

Thermodynamic analysis of InN and InxGa1−xN MOVPE using various nitrogen sources

Y. Kumagai, A. Koukitu, Y. Kangawa, 2004 .

Vapor phase epitaxy of GaAs by the pulsed introduction of H2

A. Koukitu, Takeyuki Suzuki, H. Seki, 1985 .

Dependence of surface morphology at initial growth of CdTe on the II/VI on (2 1 1) Si substrates by vapor phase epitaxy using metallic Cd source

A. Koukitu, K. Iso, H. Murakami, 2019, Journal of Crystal Growth.

Vapor-phase epitaxy of InxGa1−xN using chloride sources

A. Koukitu, H. Seki, N. Takahashi, 1998 .

Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films

A. Koukitu, T. Yayama, Y. Kangawa, 2010 .

Tri-halide vapor-phase epitaxy of GaN using GaCl3 on polar, semipolar, and nonpolar substrates

A. Koukitu, K. Iso, H. Murakami, 2016 .

Superconducting transition temperature in the (YBa2Cu3O7-δ)1-x (MeO)x system (MeO=PbO, SrO, ZnO, Bi2O3, SnO2, TeO2, V2O5, WO3 and MoO3)

A. Koukitu, Takeyuki Suzuki, H. Seki, 1988 .

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

M. Bulsara, Y. Kumagai, A. Koukitu, 2020, physica status solidi (b).

Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Y. Kumagai, A. Koukitu, A. Yamaguchi, 2018, Journal of Crystal Growth.

Relationship between crystal structures and Pb addition of TlSrCaCuO superconducting thin films prepared by the mist microwave plasma chemical vapor deposition method

A. Koukitu, H. Seki, Hiroshi Seki, 1995 .

Thermal stability of β-Ga2O3 in mixed flows of H2 and N2

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015 .

Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE

A. Koukitu, T. Ito, Y. Kangawa, 2009 .

As-grown preparation of Ag-doped Y-Ba-Cu-O superconducting thin films by mist microwave plasma chemical vapour deposition

A. Koukitu, H. Seki, N. Takahashi, 1995 .

Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates

Y. Kumagai, A. Koukitu, H. Murakami, 2005 .

Self-Assembled Growth and Characterization of MnxP Nanowires

A. Koukitu, T. Ishibashi, A. Bouravleuv, 2008 .

On the origin of the 265 nm absorption band in AlN bulk crystals

Toru Kinoshita, Rafael Dalmau, Baxter Moody, 2012 .

High-temperature growth of thick AlN layers on sapphire (0 0 0 1) substrates by solid source halide vapor-phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2008 .

MOVPE-like HVPE of AlN using solid aluminum trichloride source

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Effect of Ag addition on YBa2Cu3O7 − δ superconducting thin films prepared by mist microwave-plasma chemical vapor deposition

A. Koukitu, H. Seki, N. Takahashi, 1996 .

Composition dependence of superconductivity in the YBa2−xMxCu3Oy system

A. Koukitu, Takeyuki Suzuki, Koichiro Takahashi, 1989 .

Analyses of GaN (0 0 0 1) and (0001¯) surfaces by highly-charged ions

A. Koukitu, K. Motohashi, S. Tsurubuchi, 2007 .

Secondary-Ion Emission in Grazing Collisions between Highly Charged Ions and Surfaces

A. Koukitu, K. Motohashi, S. Tsurubuchi, 2007 .

Momentum-imaging spectroscopy of secondary ions from GaN and SiC surfaces collided with highly charged ions at grazing angle

A. Koukitu, K. Motohashi, S. Tsurubuchi, 2005 .

Structural and Optical Properties of Thick Freestanding AlN Films Prepared by Hydride Vapor Phase Epitaxy

Y. Kumagai, A. Koukitu, J. A. Freitas, 2012 .

Anomalous behavior of excess energy curves of InxGa1−xN grown on GaN and InN

A. Koukitu, T. Ito, Y. Kangawa, 2000 .

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Kinoshita, Baxter Moody, Yoshinao Kumagai, 2013 .

Growth of thick AlN layers by hydride vapor-phase epitaxy

Y. Kumagai, A. Koukitu, Takayoshi Yamane, 2005 .

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Y. Kumagai, A. Koukitu, H. Murakami, 2006 .

Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN

Akinori Koukitu, A. Koukitu, Tetsuya Taki, 1998 .

Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy

A. Koukitu, H. Murakami, K. Ema, 2019, Japanese Journal of Applied Physics.

Effective distribution coefficients of an ideal solid solution crystal: Monte Carlo simulation

Y. Kumagai, A. Koukitu, K. Matsumoto, 2005 .

Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors

A. Koukitu, H. Seki, 1986 .

Theoretical Analysis for Surface Reconstruction of AlN and InN in the Presence of Hydrogen

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Ab initio calculation for the decomposition process of GaN (0 0 0 1) and (0 0 0 1¯) surfaces

Y. Kumagai, A. Koukitu, H. Murakami, 2008 .

Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H2Se

A. Koukitu, H. Seki, H. Ikeda, 1990 .

Investigation of polarity dependent InN{0001} decomposition in N2 and H2 ambient

Y. Kumagai, A. Koukitu, H. Murakami, 2009 .

Polarity dependence of AlN {0001} decomposition in flowing H2

Toru Kinoshita, Yoshinao Kumagai, Hisashi Murakami, 2007 .

In situ gravimetric monitoring of decomposition rate on the surface of (0001) c‐plane sapphire for the high temperature growth of AlN

Y. Kumagai, A. Koukitu, T. Araki, 2007 .

Electronic properties of the residual donor in unintentionally doped beta-Ga2O3

E. Janzén, N. T. Son, S. Yamakoshi, 2016 .

Ab initio Calculations of GaN Initial Growth Processes on GaAs(111)A and GaAs(111)B Surfaces

Y. Kumagai, A. Koukitu, T. Irisawa, 2001 .

In situ gravimetric monitoring of surface reactions between sapphire and NH3

Y. Kumagai, A. Koukitu, K. Akiyama, 2009 .

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2

Y. Kumagai, A. Koukitu, K. Takada, 2012 .

In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face

T. Kimoto, Y. Kumagai, A. Koukitu, 2009 .

In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AlN

Y. Kumagai, A. Koukitu, K. Akiyama, 2008 .

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

Y. Kumagai, A. Koukitu, Y. Kubota, 2008 .

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

Toru Kinoshita, Koji Kawasaki, Yoshinao Kumagai, 2007 .

Influence of lattice polarity on wurzite GaN{0 0 0 1} decomposition as studied by in situ gravimetric monitoring method

Y. Kumagai, A. Koukitu, K. Takemoto, 2002 .

In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN

Y. Kumagai, A. Koukitu, H. Seki, 2000 .

In Situ Gravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy

A. Koukitu, H. Ikeda, Hisashi Seki Hisashi Seki, 1991 .

Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate

Toru Nagashima, Y. Kumagai, A. Koukitu, 2007 .

Study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods

A. Koukitu, 1999 .

In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1996 .

Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ Gravimetric Monitoring

A. Koukitu, N. Takahashi, Hisashi Seki Hisashi Seki, 1994 .

Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy

K. Shiraishi, A. Koukitu, Y. Kangawa, 2016 .

Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach

A. Koukitu, Y. Kangawa, H. Murakami, 2021 .

Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy

K. Shiraishi, Y. Kumagai, A. Koukitu, 2017 .

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Benjamin E. Gaddy, Toru Nagashima, Y. Kumagai, 2014 .

Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process

A. Koukitu, H. Seki, 1980 .

Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides

Naoyuki Takahashi, Akinori Koukitu, A. Koukitu, 1997 .

Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN

A. Koukitu, H. Seki, 1997 .

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source

A. Koukitu, K. Iso, H. Murakami, 2018, Journal of Electronic Materials.

The VPE growth of InGaP by the single flat temperature zone method

A. Koukitu, Takeyuki Suzuki, H. Seki, 1988 .

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Y. Kumagai, A. Koukitu, T. Ito, 2017 .

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Benjamin E. Gaddy, Toru Nagashima, Y. Kumagai, 2013 .

Substitution reaction of surface adsorbed P atoms to as atoms in the GaP/GaAs atomic layer epitaxy

A. Koukitu, Tetsuya Taki, H. Seki, 1998 .

Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire

Toru Nagashima, Y. Kumagai, A. Koukitu, 2008 .

Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy

Y. Kumagai, A. Koukitu, H. Seki, 2000 .

Thermodynamic study on phase separation during MOVPE growth of InxGa1-xN

A. Koukitu, H. Seki, 1998 .

Thermodynamic analysis of the MOVPE growth of InxGa1-xN

A. Koukitu, Tetsuya Taki, H. Seki, 1997 .

Thermodynamic analysis of the MOVPE growth process

A. Koukitu, Takeyuki Suzuki, H. Seki, 1986 .

In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy

A. Koukitu, Tetsuya Taki, 1997 .

In Situ Monitoring of Surface Kinetics in GaAs Atomic Layer Epitaxy by Surface Photo-Absorption Method

A. Koukitu, H. Ikeda, Hisashi Seki Hisashi Seki, 1991 .

Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1994 .

Investigation of Hydrogen Chemisorption on GaAs (111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation

Y. Kumagai, A. Koukitu, A. Miyamoto, 2000 .

Growth of a NdBaCuO Superconducting Thin Film on a MgO Substrate by Mist Microwave-Plasma Chemical Vapor Deposition Using a CeO2 Buffer Layer

A. Koukitu, H. Seki, N. Takahashi, 1998 .

Atomic layer epitaxy of GaAs using GaBr and GaI sources

A. Koukitu, Tetsuya Taki, 1997 .

In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer Epitaxy

A. Koukitu, Tetsuya Taki, Hisashi Seki Hisashi Seki, 1996 .

In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1995 .

Halogen Transport Vapor Phase Epitaxy of III–V Materials

Y. Kumagai, A. Koukitu, F. Hasegawa, 2014 .

Thermodynamic analysis of the MOVPE growth of quaternary III V alloy semiconductors

A. Koukitu, H. Seki, 1986 .

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Toru Nagashima, Y. Kumagai, A. Koukitu, 2010 .

Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450 °C

Y. Kumagai, A. Koukitu, K. Takada, 2009 .

Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

Toru Nagashima, M. Harada, H. Yanagi, 2007 .

Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE

Y. Kumagai, A. Koukitu, H. Murakami, 2013 .

Semi-polar InN(10 bar 1 3) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Thermodynamic analysis of InxGa1−xN growth conditions in molecular beam epitaxy

A. Koukitu, Yanqiu Li, H. Seki, 2000 .

Recent progress in Ga 2 O 3 power devices

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Akito Kuramata, Shigenobu Yamakoshi, Yoshinao Kumagai, 2014 .

Thermodynamic analysis of molecular beam epitaxy of II–VI semiconductors

A. Koukitu, Takeyuki Suzuki, H. Seki, 1986 .

Crystallinity and Superconducting Properties of YBa2Cu3O7−x Thin Films on NdGaO3 Substrate Prepared by Mist Microwave-plasma CVD

A. Koukitu, H. Seki, N. Takahashi, 1998 .

Preparation of (Tl, Bi, Pb)-Sr-Ca-Cu-O superconducting thin films by the mist microwave plasma chemical vapour deposition method

A. Koukitu, H. Seki, N. Takahashi, 1995 .

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, A. Koukitu, 2015 .

Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate

Y. Kumagai, A. Koukitu, Y. Kangawa, 2004 .

Preparation of Y-Ba-Cu-O Superconducting Thin Films by the Mist Microwave Plasma Decomposition Method

A. Koukitu, I. Tanaka, H. Seki, 1989 .

On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates

Benjamin E. Gaddy, Y. Kumagai, A. Koukitu, 2016 .

Growth of GaP by cold-wall metalorganic-chloride vapor phase epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1994 .

Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3

A. Koukitu, Yoshito Jin, F. Hasegawa, 1991 .

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2010 .

Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Y. Kumagai, A. Koukitu, P. Holtz, 2013 .

Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE

Y. Kumagai, A. Koukitu, T. Ito, 2003 .

Study of the Decomposition Processes of (0001)AlN in a Hydrogen Atmosphere

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth

Y. Kumagai, A. Koukitu, Y. Kangawa, 2003 .

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2014 .

Current Status of Gallium Oxide-Based Power Device Technology

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Influence of Lattice Constraint from InN and GaN Substrate on Relationship between Solid Composition of InxGa1-xN Film and Input Mole Ratio during Molecular Beam Epitaxy

Y. Kumagai, A. Koukitu, T. Ito, 2003 .

Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources

A. Koukitu, Y. Kangawa, K. Kakimoto, 2013 .

Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell

A. Koukitu, T. Ito, Y. Kangawa, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

Thermodynamic Analysis of InxGa1-xN Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy

Naoyuki Takahashi, Akinori Koukitu, A. Koukitu, 1996 .

Analysis of compositional instability of InGaN by Monte Carlo simulation

A. Koukitu, T. Ito, Y. Kangawa, 2007 .

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

H. Okamoto, Toru Nagashima, Y. Kumagai, 2012 .

Influence of substrate polarity on growth of InN films by RF‐MBE

T. Araki, Y. Nanishi, A. Koukitu, 2003 .

Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Preparation of large GaN substrates

Yoshinao Kumagai, Kensaku Motoki, Hitoshi Kasai, 2002 .

MBE growth of a novel chalcopyrite-type ternary compound MnGeP2

K. Minami, A. Koukitu, T. Ishibashi, 2005 .

Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE

Y. Kumagai, A. Koukitu, Y. Kangawa, 2004 .

Dislocation density reduction in (101 ̅1 ̅) GaN at a high temperature using tri-halide vapor phase epitaxy

Hisashi Murakami, Kenji Iso, Shoma Ohtaki, 2020, OPTO.

Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semigrand canonical Monte Carlo simulation

A. Koukitu, T. Ito, Y. Kangawa, 2003 .

New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH3)3Ga, HCl and NH3

A. Koukitu, N. Takahashi, Hisashi Seki Hisashi Seki, 1995 .

Thermodynamic Analysis of the MOVPE Growth of InAlN

Y. Kumagai, A. Koukitu, H. Seki, 2000 .

Growth of thick AlxGa1−xN ternary alloy by hydride vapor-phase epitaxy

Yoshinao Kumagai, Hisashi Murakami, Takayoshi Yamane, 2007 .

Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfaces

Y. Kumagai, A. Koukitu, H. Murakami, 2003 .

Atomic layer epitaxy of GaAsP and InAsP by halogen system

A. Koukitu, H. Seki, A. Saegusa, 1990 .

Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

Y. Kumagai, A. Koukitu, B. Monemar, 2016 .

Theoretical investigation on the decomposition process of GaN(0 0 0 1) surface under a hydrogen atmosphere

Y. Kumagai, A. Koukitu, H. Murakami, 2009 .

Influence of surface atom arrangement on the growth of InN layers on GaAs (1 1 1)A and (1 1 1)B surfaces by metalorganic vapor-phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Influence of Polarity on Surface Reaction between GaN{0001} and Hydrogen

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy.

Y. Kumagai, A. Koukitu, H. Murakami, 2000 .

Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method

Y. Kumagai, A. Koukitu, Tetsuya Taki, 1999 .