Young-woo Park

Unified Endurance Degradation Model of Floating Gate NAND Flash Memory

Chilhee Chung, Jeong-Hyuk Choi, Chang-Hyun Lee, 2013, IEEE Transactions on Electron Devices.

Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

Kinam Kim, Jungdal Choi, Kihwan Choi, 2006, 2006 International Electron Devices Meeting.

Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

Kinam Kim, Yoocheol Shin, Jungdal Choi, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Channel Coupling phenomenon as scaling barrier of NAND flash memory beyond 20nm node

Gyoyoung Jin, Eunseung Jung, A. Fayrushin, 2013, 2013 5th IEEE International Memory Workshop.

Highly scalable NAND flash memory with robust immunity to program disturbance using symmetric inversion-type source and drain structure

Jungdal Choi, Hyunjae Kim, Changhyun Lee, 2008, 2008 Symposium on VLSI Technology.

Scaling and reliability of NAND flash devices

Gyoyoung Jin, Youngwoo Park, Eunseung Jung, 2014, 2014 IEEE International Reliability Physics Symposium.

An 8 Gb multi-level NAND flash memory with 63 nm STI CMOS process technology

Young-Woo Park, Seung-Jae Lee, Joon-Sung Yang, 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

Extending the DRAM and FLASH memory technologies to 10nm and beyond

Kinam Kim, U-In Chung, Jeong-ho Yeo, 2012, Advanced Lithography.