D. Wellekens

发表

Analytical percolation model for predicting anomalous charge loss in flash memories

R. Degraeve, B. Kaczer, G. Dormans, 2004, IEEE Transactions on Electron Devices.

Comparative reliability investigation of different nitride based local charge trapping memory devices

J. de Vos, L. Haspeslagh, M. Lorenzini, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Write/erase degradation in source side injection flash EEPROM's: characterization techniques and wearout mechanisms

J. V. Houdt, G. Groeseneken, H. Maes, 1995 .

Analytical model for failure rate prediction due to anomalous charge loss of flash memories

R. Degraeve, L. Haspeslagh, M. Lorenzini, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Physical description of anomalous charge loss in floating gate based NVM's and identification of its dominant parameter

R. Degraeve, D. Wellekens, P. Hendrickx, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model.

Dirk Wellekens, Paul Hendrickx, Jan Van Houdt, 2002 .

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

S. Decoutere, M. Tack, P. Moens, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Statistical model for stress-induced leakage current and pre-breakdown current jumps in ultra-thin oxide layers

R. Degraeve, B. Kaczer, L. Haspeslagh, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Scaling of Floating Gate electrode for sub-40nm flash technologies

J. de Vos, I. Debusschere, D. Wellekens, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

Water-Assisted Positive Ion Contamination Resulting in Charge Loss in Nonvolatile Memories

L. Haspeslagh, D. Wellekens, J. van Houdt, 2000, 30th European Solid-State Device Research Conference.

Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process

S. Decoutere, D. Wellekens, M. Meneghini, 2018, MRS Communications.

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

S. Decoutere, M. V. Hove, D. Wellekens, 2018 .

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

S. Decoutere, E. Simoen, B. de Jaeger, 2021, physica status solidi (a).

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

S. Decoutere, M. Van Hove, D. Wellekens, 2012, IEEE Electron Device Letters.

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, Microelectronics Reliability.

Device breakdown optimization of AhOs/GaN MISFETs

S. Decoutere, B. de Jaeger, D. Wellekens, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

S. Decoutere, A. Tallarico, G. Groeseneken, 2016, IEEE Transactions on Electron Devices.

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

S. Decoutere, D. Wellekens, N. Posthuma, 2016, Journal of Electronic Materials.

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

S. Decoutere, D. Wellekens, S. You, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

CMOS Process Leakage AlGaN / GaN MISHEMT on Silicon

M. V. Hove, D. Wellekens, S. Stoffels, 2012 .

Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate

S. Decoutere, D. Wellekens, N. Posthuma, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013 .

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

Dirk Wellekens, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Electron Devices.

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

S. Decoutere, M. Van Hove, D. Wellekens, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

S. Decoutere, D. Wellekens, R. Langer, 2022, Applied Physics Letters.

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

S. Decoutere, G. Groeseneken, D. Wellekens, 2020, IEEE Transactions on Semiconductor Manufacturing.

A low voltage, high performance 0.35 ?m embedded flash EEPROM cell technology

L. Deferm, J. V. Houdt, H. Maes, 1998 .

HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications

Guido Groeseneken, Ludo Deferm, Dirk Wellekens, 1993 .

Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

Dirk Wellekens, J. Van Houdt, L. Haspeslagh, 2008 .

Low voltage low cost nitride embedded flash memory cell

J. D. Vos, J. V. Houdt, P. Hendrickx, 2003 .

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Au-free , High-Breakdown AlGaN / GaN MISHEMTs with Low Leakage , High Yield and Robust TDDB Characteristics

S. Decoutere, M. V. Hove, D. Wellekens, 2011 .

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Denis Marcon, Dirk Wellekens, Stefaan Decoutere, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Multi-level charge storage in source-side injection flash EEPROM

G. Groeseneken, L. Haspeslagh, L. Deferm, 1996, Proceedings of Nonvolatile Memory Technology Conference.

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Malgorzata Jurczak, Dirk Wellekens, Pieter Blomme, 2009 .

Read-disturb and endurance of SSI-flash E/sup 2/PROM devices at high operating temperatures

Dirk Wellekens, J. Van Houdt, L. Haspeslagh, 1998 .

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, IEEE Transactions on Electron Devices.

Dirk Wellekens, G. Groeseneken, J. De Blauwe, 1998 .

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, IEEE Electron Device Letters.

Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology

S. Locorotondo, L. Breuil, P. Blomme, 2012, IEEE Electron Device Letters.

Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices

M. Jurczak, J. Kittl, C. Adelmann, 2010, 2010 IEEE International Memory Workshop.

Dirk Wellekens, H. E. Maes, G. Groeseneken, 1998 .

Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells

Robin Degraeve, D. Wellekens, P. Hendrickx, 2002 .