M. Fullmann

Improved gate concept for light activated power thyristors

D. Silber, M. Fullmann, 1975, 1975 International Electron Devices Meeting.

Modeling of LDMOS and LIGBT structures at high temperatures

D. Silber, M. Fullmann, B. Fatemizadeh, 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

Comparison of lateral EST and IGBT devices on SOI substrates

M. Fullmann, J. Korec, J. Serafin, 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

Thermal behaviour of lateral power devices on SOI substrates

R. Constapel, M. Fullmann, R. Constapel, 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.