F. Xie

发表

Improvement of responsivity of GaN-based p-i-n ultraviolet photodetector by inserting a delta doped layer in active region

Guosheng Wang, Li Jin, Jin Guo, 2017, Applied Optics and Photonics China.

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Xiaofeng Gu, Dawei Yan, Guofeng Yang, 2014 .

Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes

F. Xie, Shumei Gao, Guofeng Yang, 2015 .

Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors

W. Lu, Jin Guo, F. Xie, 2013 .

Frequency response and design consideration of GaN SAM avalanche photodiodes

Guosheng Wang, F. Xie, Guofeng Yang, 2016 .

High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet p—i—n Photodetectors

Dunjun Chen, Hai Lu, Rong Zhang, 2012 .

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Dunjun Chen, Hai Lu, P. Han, 2011 .

The Electronic and Optical Properties of InSe-GeTe Heterobilayer via Applying Biaxial Strain

F. Xie, Guofeng Yang, Yueke Wang, 2019, Nanomaterials.

3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective

F. Xie, Guofeng Yang, Guo-qing Chen, 2021, Nanoscale advances.

GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet A Photodetectors

Jun Wang, Jin Guo, F. Xie, 2014 .

GaN MSM photodetectors fabricated on bulk GaN with low dark‐current and high UV/visible rejection ratio

Dunjun Chen, Hai Lu, Rong Zhang, 2011 .

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

P. Han, R. Zhang, Youliao Zheng, 2011 .

Performance comparison of front- and back-illuminated AlGaN-based metal–semiconductor–metal solar-blind ultraviolet photodetectors

Dunjun Chen, Hai Lu, Rong Zhang, 2013 .

High-Quality White Laser Diode Fabricated by Laser-Driven Tricolor PiG Film-on-Sapphire

F. Xie, Benli Yu, Guofeng Yang, 2022, IEEE Transactions on Electron Devices.

Dual-wavelength photodetector based on layered WSe2/n-GaN van der Waals heterostructure

F. Xie, Guoqing Chen, Xiumei Zhang, 2022, Materials Today Nano.

Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by tailoring polarization in electron blocking layer

Rong Zhang, Youdou Zheng, F. Xie, 2015 .

Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

Hai Lu, Liang Li, Xiaoli Ji, 2012, IEEE Sensors Journal.

Improved performance of AlGaN solar-blind avalanche photodiodes with dual multiplication layers

F. Xie, Xiumei Zhang, Yan Gu, 2022, Optical and Quantum Electronics.

Insights on the enhanced Raman scattering of monolayer TMDCs (Mo, W)(S, Se)2 with Ag nanoparticles via rapid thermal annealing

A. Danner, F. Xie, Yueke Wang, 2020 .

Epitaxial growth and interfacial property of monolayer MoS2 on gallium nitride

P. Yan, Yi-xin Zhang, F. Xie, 2018, RSC advances.

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

K. X. Dong, P. Han, P. Chen, 2014 .

Al0.18Ga0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure

F. Xie, Guoqing Chen, Qigao Fan, 2023, IEEE Transactions on Electron Devices.

AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer

F. Xie, R. Wang, R. Yan, 2021, Applied Physics A.

Carrier transport and photoconductive gain mechanisms of AlGaN MSM photodetectors with high Al Content

F. Xie, Guofeng Yang, Xiumei Zhang, 2021, Chinese Optics Letters.

L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection

F. Xie, Guoqing Chen, Xiumei Zhang, 2022, IEEE Transactions on Electron Devices.

GaN ultraviolet detector based demonstrator board for UV-index monitoring

Jun Wang, Jin Guo, Feng Xie, 2015, Photoelectronic Technology Committee Conferences.

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

R. Zhang, F. Xie, X. Xiu, 2011, IEEE Electron Device Letters.

Insights Into the Two-Dimensional MoS2 Grown on AlGaN(GaN) Substrates by CVD Method

F. Xie, Guofeng Yang, Xiumei Zhang, 2021, IEEE Photonics Journal.

Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector

Jun Wang, Jin Guo, Feng Xie, 2019, International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT).

Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN

Dunjun Chen, Hai Lu, Rong Zhang, 2012, IEEE Photonics Technology Letters.

Analysis of High-Temperature Carrier Transport Mechanisms for High Al-Content Al0.6Ga0.4N MSM Photodetectors

A. Danner, F. Xie, Guofeng Yang, 2020, IEEE Transactions on Electron Devices.

Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer

F. Xie, F. X. Wang, 2016 .

Van der Waals heterostructures of Janus XSeTe (X = Mo, W) and arsenene monolayers: A first principles study

F. Xie, Guofeng Yang, X. Gu, 2020 .

Design analysis of polarization-doped N-face InGaN/GaN light-emitting diodes with different AlxGa1−xN graded layers

Dawei Yan, Guofeng Yang, Fuxue Wang, 2015 .

GaN ultraviolet p–i–n photodetectors with enhanced deep ultraviolet quantum efficiency

Guosheng Wang, Feng Xie, Jun Wang, 2017, Applied Optics and Photonics China.

Efficiency enhancement of InGaN/GaN light-emitting diodes with a p-i-n electron blocking layer

Guosheng Wang, Jin Guo, Feng Xie, 2019, International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT).