H. Morel

发表

Toward SiC-JFETs modelling with temperature dependence

Hervé Morel, T. Ben Salah, S. Mtimet, 2010 .

Towards an airborne high temperature SiC inverter

B. Allard, H. Morel, D. Bergogne, 2008, 2008 IEEE Power Electronics Specialists Conference.

Robustness in short-circuit Mode of SiC MOSFETs

Hervé Morel, Cyril Buttay, Stéphane Lefebvre, 2015 .

Predicting static losses in an inverter-leg built with SiC normally-off JFETs and SiC diodes

F. Morel, H. Morel, C. Buttay, 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

SiC MOSFETs robustness for diode-less applications

S. Lefebvre, H. Morel, D. Labrousse, 2018 .

Technological parameter identification of PIN-diode using transient signal parameter fits

B. Allard, H. Morel, J. Chante, 2002 .

Choosing a thermal model for electrothermal simulation of power semiconductor devices

B. Allard, H. Morel, A. Ammous, 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

Electro-thermal simulation including a temperature distribution inside power semiconductor devices

H. Morel, B. Allard *, H. Garrab, 2005 .

Developing an advanced PWM-switch model including semiconductor device non-linearities

H. Morel, A. Ammous, M. Ayedi, 2003 .

State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: a novel approach

H. Morel, J. Chante, S. Gamal, 1994 .

Developing an equivalent thermal model for discrete semiconductor packages

B. Allard, H. Morel, J. Chante, 2003 .

Robustness of SiC MOSFETs in short-circuit mode

S. Lefebvre, H. Morel, Cheng Chen, 2015 .

Power converter average model computation using the bond graph and Petri net techniques

Bruno Allard, Hervé Morel, B. Allard, 1995, Proceedings of PESC '95 - Power Electronics Specialist Conference.

High Temperature Inverter for Airborne Application

Régis Meuret, H. Morel, Dominique Bergogne, 2010 .

Die attach using silver sintering. Practical implementation and analysis

H. Morel, D. Planson, R. Meuret, 2013 .

Full Densification of Molybdenum Powders Using Spark Plasma Sintering

D. Fabrègue, B. Allard, H. Morel, 2012, Metallurgical and Materials Transactions A.

High-temperature die-attaches for SiC power devices

H. Morel, C. Buttay, Stanislas Hascoet, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

Mark Johnson, Cyril Buttay, H. Morel, 2011 .

8 Analytical Compact Models

B. Allard, H. Morel, 2022 .

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

H. Morel, D. Planson, J. Augé, 2015, 2015 International Semiconductor Conference (CAS).

Temperature dependence of silicon and silicon carbide power devices: An experimental analysis

H. Morel, S. Mtimet, T. Ben Salah, 2012, 2012 16th IEEE Mediterranean Electrotechnical Conference.

Modeling of a non-linear conductive magnetic circuit. 2. Bond graph formulation

H. Morel, J. P. Masson, H. Morel, 1995 .

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

H. Morel, D. Planson, D. Tournier, 2011 .

Higher temperature power electronics for larger-scale mechatronic integration

Philippe Godignon, Bruno Allard, Hervé Morel, 2011 .

A novel approach to extract accurate design parameters of PiN diode

H. Morel, K. Besbes, S. Ghedira, 2007 .

A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge

B. Allard, H. Morel, D. Bergogne, 2003 .

Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs

A. Castellazzi, H. Morel, D. Planson, 2019, Materials Science Forum.

A Detailed Extraction Procedure of Thyristor Design Parameters

H. Morel, H. Garrab, Atef Jedidi, 2018 .

Extraction of the 4H-SiC/SiO2 Barrier Height Over Temperature

H. Morel, C. Buttay, O. Aviñó-Salvadó, 2020, IEEE Transactions on Electron Devices.

Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors

H. Morel, C. Buttay, Hugo Reynes, 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

H. Morel, D. Planson, A. Yvon, 2022, 2022 International Semiconductor Conference (CAS).

Carrier lifetime measurement by ramp recovery of p-i-n diodes

H. Morel, J. Chante, S. Gamal, 1990 .

Thermal Stability of Silicon Carbide Power JFETs

F. Morel, H. Morel, D. Bergogne, 2013, IEEE Transactions on Electron Devices.

State of the art of high temperature power electronics

Bruno Allard, Dominique Planson, Hervé Morel, 2009 .

Electrical, thermal and mechanical properties of poly-etherimide epoxy-diamine blend

Hervé Morel, Sébastien Pruvost, S. Pruvost, 2017 .

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Micro and Nanostructures.

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Microelectron. J..

High Temperature Ageing of Fe-based Nanocrystalline Ribbons

Remi Robutel, H. Morel, P. Bevilacqua, 2012 .

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen, Hervé Morel, Cyril Buttay, 2015, Microelectron. Reliab..

Electrothermal modeling of IGBTs: application to short-circuit conditions

Bruno Allard, Hervé Morel, Jean-Pierre Chante, 2000 .

Field effect in large grain polycrystalline silicon

H. Morel, J.-P. Colinge, J.-P. Chante, 1983, IEEE Transactions on Electron Devices.

Role of the temperature distribution on the PN junction behaviour in the electro‐thermal simulation

Bruno Allard, Kamel Besbes, Hatem Garrab, 2004 .

A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems

Hervé Morel, Kamel Besbes, Atef Jedidi, 2015, IEEE Transactions on Industrial Electronics.

High temperature ageing of microelectronics assemblies with SAC solder joints

Hervé Morel, Cyril Buttay, Alexandrine Guédon-Gracia, 2017, Microelectron. Reliab..

Avalanche behavior of low-voltage power MOSFETs

C. Buttay, H. Morel, B. Allard, 2004, IEEE Power Electronics Letters.

On the extraction of PiN diode design parameters for validation of integrated power converter design

H. Morel, B. Allard, K. Besbes, 2005, IEEE Transactions on Power Electronics.

Measurement and analysis of SiC-MOSFET threshold voltage shift

Hervé Morel, Quentin Molin, Mehdi Kanoun, 2018, Microelectron. Reliab..

Application of averaged models to real-time monitoring of power converters

Xuefang Lin-Shi, D. Bergogne, K. Ammous, 2001, 2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230).

Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding

C. Buttay, H. Morel, B. Allard, 2012, IEEE Transactions on Components, Packaging and Manufacturing Technology.

Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices

Dominique Planson, Hervé Morel, Dominique Tournier, 2010 .

A Control Strategy of DC Building Microgrid Connected to the Neighborhood and AC Power Network

Hamed Yahoui, Hervé Morel, Hoang Giang Vu, 2017 .

Active protections for normally-on SiC JFETs

Cyril Buttay, Dominique Bergogne, Regis Meuret, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

Analyse de la robustesse des MOSFET SiC pour les applications diode-less

S. Lefebvre, H. Morel, D. Labrousse, 2016 .

New definition of critical energy for SiC MOSFET robustness under short circuit operations: The repetitive critical energy

S. Lefebvre, H. Morel, D. Labrousse, 2020, Microelectronics Reliability.

Inverse Models of Voltage and Current Probes

Hervé Morel, Kaiçar Ammous, Anis Ammous, 2011, IEEE Transactions on Instrumentation and Measurement.

Analysis of Power Switching Losses Accounting Probe Modeling

Hervé Morel, Kaiçar Ammous, Anis Ammous, 2010, IEEE Transactions on Instrumentation and Measurement.

Error in estimation of power switching losses based on electrical measurements

Bruno Allard, Hervé Morel, D. Ligot, 2000, 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference Proceedings (Cat. No.00CH37018).

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Dominique Planson, Alberto Castellazzi, Oriol Avino-Salvado, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Thermal Stability of Silicon Carbide Power Diodes

C. Buttay, H. Morel, F. Morel, 2012, IEEE Transactions on Electron Devices.

Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

H. Morel, D. Planson, C. Raynaud, 2023, Journal of Materials Science: Materials in Electronics.

Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

M. Charles, C. Gillot, R. Gwoziecki, 2023, Energies.

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

H. Morel, D. Planson, L. Phung, 2019, Energies.

Dynamic Circuit Model of SiC VJFET For Power Integrated Circuit Design

Kamel Besbes, Sami Ghedira, Hervé Morel, 2018 .

Thermal Runaway Robustness of SiC VJFETs

F. Morel, H. Morel, D. Bergogne, 2013 .

High-temperature behavior of SiC power diodes

Cyril Buttay, Dominique Bergogne, Christophe Raynaud, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

M. Charles, C. Gillot, R. Gwoziecki, 2022, Energies.

On the validity of the standard SPICE model of the diode for simulation in power electronics

Bruno Allard, Hervé Morel, Nouri Massmoudi, 2001, IEEE Trans. Ind. Electron..

Bi-objective sizing optimization of power converter using genetic algorithms: Application to photovoltaic systems

Hervé Morel, Hanen Mejbri, Kaiçar Ammous, 2013 .

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

G. Ferro, H. Morel, D. Planson, 2015, 2015 International Semiconductor Conference (CAS).

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

G. Ferro, H. Morel, D. Planson, 2015 .

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Dominique Planson, Hervé Morel, Alberto Castellazzi, 2018, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

F. Richardeau, H. Morel, D. Planson, 2023, International Conference on Mixed Design of Integrated Circuits and Systems.

Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions

F. Iannuzzo, H. Morel, J. Reynes, 2023, Microelectronics and reliability.

Avalanche robustness of SiC Schottky diode

Hervé Morel, Cyril Buttay, Ilyas Dchar, 2016, Microelectron. Reliab..

Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

H. Morel, D. Planson, Hassan Hamad, 2023, Electronics.

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Hervé Morel, Cyril Buttay, Stéphane Lefebvre, 2018, Microelectron. Reliab..

Transient temperature measurements and modeling of IGBT's under short circuit

Bruno Allard, Hervé Morel, Anis Ammous, 1998 .

Evaluation of printed-circuit boards materials for high temperature operation

H. Morel, P. Bevilacqua, C. Buttay, 2017 .

An advanced VHDL‐AMS PiN diode model: towards simulation‐based design of power converters

Tarek Ben Salah, Hervé Morel, Sameh Mtimet, 2015 .

Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

B. Allard, H. Morel, C. Buttay, 2019, International Journal of Power Electronics.

A physically based diode model for circuit simulation

Tarek Ben Salah, Hervé Morel, Sofiane Khachroumi, 2013 .

Silicon–carbide junction field effect transistor built-in diode: an experimentally verified electrical model

T. B. Salah, H. Morel, S. Khachroumi, 2012 .

Switching parameter maps-a new approach to the validity domain of power device models

Bruno Allard, Hervé Morel, Kaiçar Ammous, 2003, IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03..

Averaged modeling of power converters including semiconductor device nonlinearities

Bruno Allard, Hervé Morel, Sami Ghedira, 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

Rules for deriving basic semiconductor region models

Bruno Allard, Hervé Morel, H. Helali, 1994, Proceedings of 1994 Power Electronics Specialist Conference - PESC'94.

A novel simulation of power switching bipolar transistor

Bruno Allard, H. Morel, J.-P. Change, 1992, [Proceedings] 1992 IEEE International Symposium on Circuits and Systems.

An Electrothermal Behavior Study of the Power PiN Diode

H. Morel, H. Garrab, Atef Jedidi, 2018 .

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

H. Morel, D. Planson, P. Bevilacqua, 2020, 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

Bruno Allard, Hervé Morel, Kamel Besbes, 2006 .

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

H. Morel, M. Mermet-Guyennet, D. Planson, 2020 .

An estimation method of the channel temperature of power MOS devices

Bruno Allard, Hervé Morel, Dominique Bergogne, 2000, 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference Proceedings (Cat. No.00CH37018).

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Dominique Planson, Hervé Morel, Alberto Castellazzi, 2018, Microelectron. Reliab..

Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, 2018, 2018 IEEE International Conference on Industrial Technology (ICIT).

Improved Layout of Inverter for EMC Analysis

C. Vollaire, H. Morel, R. Meuret, 2017 .

Optimal design of power converter using multi-objective genetic algorithm

Hervé Morel, Hanen Mejbri, Kaiçar Ammous, 2012 .

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Dominique Planson, Hervé Morel, Pierre Lefranc, 2009 .