B. Kallinger

发表

Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

A. Danilewsky, B. Kallinger, S. Polster, 2011 .

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV

C. Hecht, B. Kallinger, B. Thomas, 2009 .

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

B. Kallinger, P. Berwian, J. Friedrich, 2014 .

Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping

B. Kallinger, M. Rommel, A. Bauer, 2020 .

Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices

B. Kallinger, M. Rommel, T. Erlbacher, 2018, Materials Science Forum.

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

A. Danilewsky, B. Kallinger, S. Polster, 2013 .

Interactions of Dislocations during Epitaxial Growth of SiC and GaN

B. Kallinger, P. Berwian, J. Friedrich, 2010 .

Crystal growth of compound semiconductors with low dislocation densities

B. Kallinger, P. Berwian, I. Knoke, 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

Scalable Quantum Memory Nodes using nuclear spins in Silicon Carbide

B. Kallinger, P. Berwian, F. Kaiser, 2023, 2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

Deeper insight into lifetime-engineering in 4H-SiC by ion implantation

B. Kallinger, P. Berwian, T. Erlbacher, 2019, Journal of Applied Physics.

Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

B. Kallinger, P. Berwian, J. Friedrich, 2013 .

4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions

B. Kallinger, P. Berwian, J. Friedrich, 2011 .

Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates

B. Kallinger, 2021, Wide Bandgap Semiconductors for Power Electronics.

Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity

J. Heitmann, B. Kallinger, P. Berwian, 2019, Materials Science Forum.

Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor

B. Kallinger, C. Kranert, J. Erlekampf, 2023, Solid State Phenomena.

Study on the sublimation growth of GaN using different powder sources and investigation on the sublimation behaviour of GaN powder by means of thermogravimetry

B. Kallinger, J. Friedrich, G. Müller, 2007 .

Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC

L. Frey, B. Kallinger, P. Berwian, 2018, Materials Science Forum.

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD

J. Bergman, E. Janzén, B. Kallinger, 2014 .

Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material

B. Kallinger, P. Berwian, J. Friedrich, 2008 .

Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

B. Kallinger, P. Berwian, J. Friedrich, 2021 .

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

P. Friedrichs, C. Hecht, B. Kallinger, 2013 .

The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability

B. Kallinger, T. Erlbacher, H. Schlichting, 2023, Materials Science Forum.

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC

B. Kallinger, S. Polster, P. Berwian, 2010 .

SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV

P. Friedrichs, C. Hecht, D. Peters, 2013 .

Doping induced lattice misfit in 4H–SiC homoepitaxy

B. Kallinger, P. Berwian, J. Friedrich, 2012 .

Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers

B. Kallinger, J. Friedrich, B. Thomas, 2008 .

Optical Stressing of 4H-SiC Material and Devices

B. Kallinger, P. Berwian, J. Friedrich, 2018, Materials Science Forum.

Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA

B. Kallinger, P. Berwian, C. F. Bayer, 2015 .