Yi Chen

发表

High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography

Xianrong Huang, D. Black, A. Macrander, 2007 .

Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC

Y. Shishkin, S. Saddow, Yi Chen, 2006 .

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Yi Chen, M. Dudley, Hui Zhang, 2006 .

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Yi Chen, M. Dudley, Hui Zhang, 2006 .

Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses

Yi Chen, M. Dudley, M. MacMillan, 2008 .

Sense Determination of Micropipes via Grazing-Incidence Synchrotron White Beam X-ray Topography in 4H Silicon Carbide

Yi Chen, M. Dudley, G. Dhanaraj, 2007 .

Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

Yi Chen, M. Dudley, R. Stahlbush, 2007 .

Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC

Xianrong Huang, Yi Chen, M. Dudley, 2008 .

Epitaxial growth and characterization of silicon carbide films

Yi Chen, M. Dudley, Bei Wu, 2006 .

Modeling of Halide Chemical Vapor Deposition of SiC

Yi Chen, M. Dudley, R. Ma, 2006 .

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

H. Tsuchida, I. Kamata, Yi Chen, 2008 .

Aspects of Dislocation Behavior in SiC

Xianrong Huang, Yi Chen, M. Dudley, 2008 .

Direct Determination of Dislocation Sense of Closed-Core Threading Screw Dislocations using Synchrotron White Beam X-ray Topography in 4H Silicon Carbide

Yi Chen, M. Dudley, 2007 .

Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

M. Loboda, G. Chung, Yi Chen, 2012 .

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

H. Tsuchida, I. Kamata, Yi Chen, 2009 .

Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

Xianrong Huang, D. Black, A. Macrander, 2008 .

Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

Xianrong Huang, Yi Chen, M. Dudley, 2008 .

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

Yi Chen, M. Dudley, R. Stahlbush, 2009 .

Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization

Yi Chen, M. Dudley, Da-Niu Cai, 2007 .

Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates

Yi Chen, M. Dudley, M. Yoganathan, 2008 .

Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide

Yi Chen, M. Dudley, R. Ma, 2007 .

Interaction between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

Yi Chen, M. Dudley, R. Stahlbush, 2007 .