M. Dudley

M. Dudley, V. Petrov, X. Mateos, 2009, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.

Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals

Michael Dudley, Shaoping Wang, Calvin H. Carter, 1994 .

Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography

P. Neudeck, M. Dudley, W. Vetter, 2002 .

Growth Defect Studies in SiC Single Crystals

M. Dudley, W. Vetter, 1996 .

Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

C. Carter, M. Dudley, D. Asbury, 1993 .

Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography

A. Danilewsky, P. McNally, M. Dudley, 2018, Materials Science Forum.

DYNAMIC IN-SITU SYNCHROTRON X-RAY TOPOGRAPHIC OBSERVATIONS OF DISLOCATIONS IN NOTCHED ICE CRYSTALS

M. Dudley, I. Baker, X. Hu, 1996 .

Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials

M. Boćkowski, M. Dudley, Jung Han, 2022, Materials Science Forum.

Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography

M. Dudley, L. Assoufid, B. Raghothamachar, 2022 .

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

P. Mawby, Y. Sharma, M. Dudley, 2020 .

Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms

S. Kennerly, M. Dudley, B. Raghothamachar, 2022, Materials Science Forum.

Template effects, asymmetry, and twinning in helical inclusion compounds.

A. C. Hillier, M. Hollingsworth, M. Dudley, 2002, Angewandte Chemie.

A characterization of InxGa1−x As/GaAs strained-layer systems using a combination of synchrotron X-ray topography and transmission electron microscopy

M. Dudley, D. Paine, D. Howard, 1991 .

Depth Sensitive Imaging of Defects in Epilayers and Single Crystals Using White Beam Synchrotron Radiation Topography in Grazing Bragg-Laue Geometry.

M. Dudley, Jun Wu, H. Liu, 1989 .

Defect-Selective Etching of Icosahedral Boron Arsenide (B 12 As 2 ) Crystals in Molten Potassium Hydroxide

M. Dudley, J. Edgar, A. Mayo, 2011 .

Hexagonal voids and the formation of micropipes during SiC sublimation growth

M. Skowronski, M. Dudley, W. Vetter, 2001 .

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

P. Neudeck, M. Skowronski, M. Dudley, 2003 .

Characterization of SiC using Synchrotron White Beam X-ray Topography

M. Dudley, X. Huang, 2000 .

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

M. Dudley, B. Raghothamachar, J. Edgar, 2015 .

Growth and Process Induced Dislocations in Zinc Oxide Crystals

M. Dudley, D. Bliss, G. Dhanaraj, 2006 .

Synchrotron x-ray topography studies of twin structures in lanthanum aluminate single crystals

M. Dudley, G. Yao, J. Phillips, 1992 .

X-ray characterisation of zinc oxide (ZnO) single crystal substrates

M. Dudley, B. Raghothamachar, G. Dhanaraj, 2010 .

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides.

M. Dudley, J. Bai, X. Huang, 2005, Physical review letters.

Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures

A. Agarwal, M. Dudley, R. Stahlbush, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC

Y. Shishkin, S. Saddow, Yi Chen, 2006 .

Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport

M. Dudley, B. Raghothamachar, R. Schlesser, 2006 .

Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices

Krishna Shenai, Michael Dudley, Robert F. Davis, 2013 .

Reduction of Chemical Reaction Mechanism for Halide-Assisted Silicon Carbide Epitaxial Film Deposition

M. Dudley, R. Ma, Rong Wang, 2009 .

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Yi Chen, M. Dudley, Hui Zhang, 2006 .

Synchrotron white-beam topographic studies of 2H–SiC crystals

P. Neudeck, M. Dudley, J. Powell, 2001 .

Solid state interfacial reactions between TiC thin films and Ti{sub 3}Al substrates

M. Dudley, W. Si, R. Wu, 1995 .

Synthesis of GaN Nanostructures at Low Temperatures by Chemical Vapor Deposition

M. Dudley, B. Raghothamachar, J. Carvajal, 2008 .

Characterizations of ZnSe single crystals grown by physical vapor transport

R. Matyi, M. Dudley, C. Su, 2000 .

Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films

M. Dudley, Yimei Zhu, Lihua Zhang, 2011 .

Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography

M. Dudley, B. Raghothamachar, Yafei Liu, 2020 .

Synchrotron X-ray topography studies of twinning and the phase transition at 145°C in LaGaO3 single crystals

M. Dudley, G. Yao, Yanbin Wang, 1991 .

High temperature transmission electron microscopy and X-ray diffraction studies of twinning and the phase transition at 145°C in LaGaO3

M. Dudley, G. Yao, Yanbin Wang, 1991 .

Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds

M. Dudley, B. Raghothamachar, R. Dalmau, 2004 .

GROWTH KINETICS AND THERMAL STRESS IN ALN BULK CRYSTAL GROWTH

M. Dudley, Bei Wu, Hui Zhang, 2003 .

Synchrotron topography of phase transitions in perovskite-like crystals

M. Dudley, G. Yao, 1993 .

Determination of 3-Dimensional Defect Structures in Gallium Arsenide Epilayers on Silicon Using White Beam Synchrotron Radiation Topography in both Transmission and Grazing Bragg-Laue Geometry.

Y. Kao, M. Dudley, H. Liu, 1989 .

Synthesis of Molybdenum Oxide Nanoplatelets during Crystallization of the Precursor Gel from Its Hybrid Nanocomposites

M. Dudley, P. Gouma, Y. Ji, 2007 .

Energy band structure and optical response function of icosahedral B(12)As(2): A spectroscopic ellipsometry and first-principles calculational study

C. Cobet, N. Esser, M. Dudley, 2010 .

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

M. Dudley, B. Flanders, B. Raghothamachar, 2016 .

Homoepitaxial HVPE GaN: A potential substrate for high performance devices

M. Boćkowski, M. Dudley, S. Wu, 2018, Journal of Crystal Growth.

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Yi Chen, M. Dudley, Hui Zhang, 2006 .

High-power switching in semiconductors - What is beyond silicon thyristor?

P. Neudeck, M. Dudley, K. Shenai, 2011, IEEE 2011 EnergyTech.

Investigations of Non-Micropipe X-Ray Imaged Crystal Defects in SiC Devices

P. Neudeck, M. Dudley, H. Su, 2000 .

Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

G. Chung, M. Dudley, B. Raghothamachar, 2019 .

Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers

M. Dudley, B. Raghothamachar, Hongyu Peng, 2020, Journal of Electronic Materials.

Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses

Yi Chen, M. Dudley, M. MacMillan, 2008 .

Sense Determination of Micropipes via Grazing-Incidence Synchrotron White Beam X-ray Topography in 4H Silicon Carbide

Yi Chen, M. Dudley, G. Dhanaraj, 2007 .

Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

Yi Chen, M. Dudley, R. Stahlbush, 2007 .

Bulk Growth of Large Area SiC Crystals

J. Sumakeris, M. Paisley, A. Powell, 2016 .

Synchrotron topography studies of the operation of double-ended Frank–Read partial dislocation sources in 4H-SiC

M. Dudley, B. Raghothamachar, Fangzhen Wu, 2014 .

Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC

M. Dudley, B. Raghothamachar, Fangzhen Wu, 2013, Journal of Electronic Materials.

Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC

Xianrong Huang, Yi Chen, M. Dudley, 2008 .

SRS Radiation Induced Polymerization of 2,4-Hexadiynediol-BIS-(p-Toluenesulphonate) (PTS)

M. Dudley, J. Sherwood, D. Bloor, 1983 .

Memory and Perfection in Ferroelastic Inclusion Compounds

Alexis A Black, M. Abel, M. Hollingsworth, 2005 .

Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals

K. E. Morgan, G. A. Slack, M. Shur, 2002 .

Transmission Electron Microscopy Characterization of Crystals

M. Dudley, J. Bai, Luming Wang, 2010 .

Springer handbook of crystal growth

Michael Dudley, Vishwanath Prasad, M. Dudley, 2010 .

Epitaxial growth and characterization of silicon carbide films

Yi Chen, M. Dudley, Bei Wu, 2006 .

X-Ray Topography Techniques for Defect Characterization of Crystals

Balaji Raghothamachar, Michael Dudley, M. Dudley, 2010 .

The perfection and defect structure of organic hourglass inclusion K2SO4 crystals

M. Dudley, B. Kahr, W. Vetter, 2002 .

Crystal Growth Techniques and Characterization: An Overview

M. Dudley, V. Prasad, K. Byrappa, 2010 .

Synchrotron white-beam X-ray topography of ferroelectric domains in a BaTiO3 single crystal

M. Dudley, Su-jin Chung, W. Si, 1997 .

Synchrotron Topography Observations of a Low Temperature Phase Transition in An Organic Crystal

M. Dudley, Jun Wu, W. Jones, 1992 .

Synchrotron White Radiation Topographic Studies of the X-Ray Induced Solid State Polymerization of Bis(Propio1ato)Tetra-aquozinc(II) Single Crystals

M. Dudley, B. Foxman, S. Hou, 1990 .

The Application of Neutron Topography to the Study of X-ray Sensitive Organic Crystals - a Possible Alternative to X-ray Topography.

M. Dudley, 1989 .

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

D. Frear, D. Ritchie, L. Veeser, 1999 .

Microstructure and interfaces in TiB{sub 2}/Ti-46Al-3Cr alloy composites

M. Dudley, W. Si, R. Wu, 1995 .

Growth of Boron Carbide Crystals from a Copper Flux

M. Dudley, M. Kuball, J. Edgar, 2009 .

The character of micropipes in silicon carbide crystals

M. Dudley, W. Vetter, 2006 .

Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide

M. Dudley, W. Vetter, Michael Dudley, 2001 .

Physical vapor transport crystal growth of ZnO

Michael Dudley, Shanshan Liang, J. Carlos Rojo, 2006, SPIE OPTO.

Experimental measurement of the crack tip strain field in a single crystal

F. Chiang, M. Dudley, X. M. Li, 1992 .

Modeling of Halide Chemical Vapor Deposition of SiC

Yi Chen, M. Dudley, R. Ma, 2006 .

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

S. Kennerly, M. Dudley, B. Raghothamachar, 2022, ECS Journal of Solid State Science and Technology.

Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography

M. Dudley, B. Raghothamachar, Shan-Yang Hu, 2022, Journal of Crystal Growth.

Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

M. Dudley, K. Kisslinger, B. Raghothamachar, 2020, Journal of Electronic Materials.

Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography

M. Dudley, S. Stoupin, B. Raghothamachar, 2018, Journal of Electronic Materials.

Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation

M. Dudley, B. Raghothamachar, Shan-Yang Hu, 2021, ECS Transactions.

Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2019, Journal of Electronic Materials.

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2019, Materials Science Forum.

Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2019, Materials Science Forum.

Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2018, Journal of Electronic Materials.

Compositional, strain contour and property mapping of CdZnTe boules and wafers

M. Dudley, D. Larson, D. Gillies, 1993 .

Dislocation contrast on X-ray topographs under weak diffraction conditions

Xianrong Huang, M. Dudley, L. Assoufid, 2021, Journal of Applied Crystallography.

Microstructure Analysis of GaN Epitaxial Layers During Ion Implantation Using Synchrotron X-Ray Topography

M. Dudley, B. Raghothamachar, Shan-Yang Hu, 2021, ECS Transactions.

X-ray topography characterization of gallium nitride substrates for power device development

A. Allerman, M. Dudley, Yuji Zhao, 2020, Journal of Crystal Growth.

In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers

A. Danilewsky, P. McNally, M. Dudley, 2018, Materials Science Forum.

Projection x-ray topography system at 1-BM x-ray optics test beamline at the advanced photon source

A. Macrander, M. Dudley, E. Trakhtenberg, 2016 .

Invited) Crystal Defects in Wide Bandgap Semiconductors

Krishna Shenai, Michael Dudley, Aristos Christou, 2014 .

Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

Balaji Raghothamachar, Michael Dudley, Fangzhen Wu, 2011 .

A Novel X-ray Diffraction –based Technique for Complete Stress State Mapping of Packaged Silicon Dies

M. Dudley, B. Raghothamachar, V. Noveski, 2009 .

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

H. Tsuchida, I. Kamata, Yi Chen, 2008 .

Aspects of Dislocation Behavior in SiC

Xianrong Huang, Yi Chen, M. Dudley, 2008 .

Direct Determination of Dislocation Sense of Closed-Core Threading Screw Dislocations using Synchrotron White Beam X-ray Topography in 4H Silicon Carbide

Yi Chen, M. Dudley, 2007 .

Direct evidence of micropipe-related pure superscrew dislocations in SiC

C. Carter, M. Dudley, W. Vetter, 1999 .

White-beam synchrotron topographic studies of defects in 6H-SiC single crystals

Michael Dudley, Wei Huang, Shaoping Wang, 1995 .

A new diagnostic tool for the non-destructive characterization of damage accompanying the electromagnetic breakdown of epitaxial silicon p-n junctions

M. Dudley, C. Fazi, D. Gordon-Smith, 1992 .

Dynamic observation of dislocation sources at grain boundaries in ice

M. Dudley, I. Baker, G. Yao, 1992 .

Dislocation line direction determination in pyrene single crystals

M. Dudley, D. Yuan, 1992 .

Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

M. Dudley, F. F. Wang, D. Hodul, 1990 .

Determination of penetration depths and analysis of strains in single crystals by white beam synchrotron X-ray topography in grazing Bragg-Laue geometries

M. Dudley, G. Yao, J. Wu, 1989 .

Projective properties of Laue topographs

M. Dudley, J. Miltat, 1980 .

Applications of synchrotron radiation topography to dynamic processes in single crystal materials

M. Dudley, 1987 .

X-Ray Topographic Studies of the Solid-State Polymerization of PTS [2,4-Hexadiyne Diol Bis(p-Toluene Sulphonate)]

M. Dudley, J. Sherwood, D. Bloor, 1985 .

A comparison of the dislocation substructure of PTS monomer and polymer

M. Dudley, J. Sherwood, D. Bloor, 1982 .

Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016, Journal of Electronic Materials.

X-RAY DIFFRACTION MEASUREMENT OF DOPING-INDUCED LATTICE MISMATCH IN N-TYPE 4H-SIC EPILAYERS GROWN ON P-TYPE SUBSTRATES

M. Dudley, R. Okojie, T. Holzheu, 2003 .

Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers

Michael Dudley, P. G. Neudeck, P. Neudeck, 1998 .

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

M. Dudley, M. Tagawa, S. Harada, 2021 .

Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2012 .

Synchrotron radiation topography studies of the phase transition in LaGaO3 crystals

M. Dudley, G. Yao, Yanbin Wang, 1991 .

Application of white beam synchrotron radiation topography to the analysis of twins

M. Dudley, G. Yao, S. Hou, 1991 .

Dynamic observations of dislocation/grain-boundary interactions in ice

M. Dudley, I. Baker, F. Liu, 2000, Annals of Glaciology.

Observation of slip transmission through a grain boundary in ice

M. Dudley, I. Baker, F. Liu, 1996 .

Studies of Defect Behavior in Large-Grain, Polycrystalline Ice Using Synchrotron X-ray Topography

M. Dudley, I. Baker, Fuping Liu, 1994 .

Computer Aided Synchrotron White Beam X-Ray Topographic Analysis of Multipolytype SiC Device Configurations

P. Neudeck, M. Dudley, J. Powell, 1994 .

Vertical bridgman growth and characterization of large-diameter single-crystal CdTe

Michael Dudley, David J. Larson, Louis G. Casagrande, 1993 .

X-ray topographic studies of solid-state reactions. II. Solid-state polymerization of 2,4-hexadiynediol bis(p-toluene sulphonate)

M. Dudley, J. Sherwood, D. Bloor, 1991, Proceedings of the Royal Society of London. Series A: Mathematical and Physical Sciences.

Combined Tem and X-Ray Topographic Characterization of In x Ga 1−x As/GaAs Strained Layer Systems.

M. Dudley, D. Paine, D. Howard, 1990 .

Topography, X‐ray

M. Dudley, 2003 .

Silicon Carbide Crystals — Part I: Growth and Characterization

M. Dudley, V. Prasad, R. Ma, 2003 .

Studies of interface demarcation and structural defects in Ga doped Ge single crystals using synchrotron white beam x-ray topography

M. Dudley, H. Chung, B. Raghothamachar, 1996 .

Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials

M. Dudley, P. Anderson, Jun Wu, 1992 .

Synchrotron X-Ray Topographic Study of the Behavior of Defects in High Carbon-Content Si Wafers during RTP

M. Dudley, D. Hodul, D. Gordon-Smith, 1991 .

Synchrotron X-Ray Topography as a Non-Destructive Monitor of Damage Accompanying IC Processing

M. Dudley, D. Gordon-Smith, T. Fanning, 1991 .

Imaging of Ferroelectric Domains in KTiOPO 4 Single Crystals by Synchrotron X-RAY Topography

M. Dudley, L. Cheng, J. Bierlein, 1993 .

Synchrotron X-Ray Topographic Study of Defects in High Quality, Flux Grown Ktiopo 4 Single Crystals

M. Dudley, L. Cheng, J. Bierlein, 1993 .

Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals

M. Dudley, S. Harada, T. Ujihara, 2021 .

Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method

J. Sumakeris, M. Dudley, B. Raghothamachar, 2016, Journal of Electronic Materials.

Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2014 .

Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

M. Loboda, G. Chung, Yi Chen, 2012 .

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

H. Tsuchida, I. Kamata, Yi Chen, 2009 .

Characterization of Defects in P-Terphenyl Single Crystals

M. Dudley, W. Jones, B. Foxman, 1992 .

Synchrotron white beam topographic imaging in grazing bragg-laue geometries.

M. Dudley, G. Yao, J. Wu, 1990, Journal of X-ray science and technology.

Synchrotron X-Ray Topographic Image Contrast Variation of BPDs Located at Different Depths Below the Crystal Surface in 4H-SiC

M. Dudley, M. Tagawa, S. Harada, 2021 .

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

M. Loboda, M. Dudley, B. Raghothamachar, 2011 .

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Ning Zhang, Balaji Raghothamachar, Michael Dudley, 2010 .

Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

Balaji Raghothamachar, Michael Dudley, Yu Zhang, 2010 .

Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g · b = 0 and g · b × l = 0

M. Dudley, B. Raghothamachar, Hongyu Peng, 2021 .

X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

M. Dudley, B. Raghothamachar, Yafei Liu, 2021, Journal of Electronic Materials.

Growth and Characterization of Silicon Carbide Crystals

M. Dudley, B. Raghothamachar, G. Dhanaraj, 2010 .

Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

Xianrong Huang, D. Black, A. Macrander, 2008 .

Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

Xianrong Huang, Yi Chen, M. Dudley, 2008 .

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

H. Tsuchida, I. Kamata, M. Dudley, 2007 .

The mechanism of micropipe nucleation at inclusions in silicon carbide

A. Powell, P. Neudeck, M. Skowronski, 1999 .

Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image

C. Carter, M. Dudley, W. Si, 1999 .

Neutron topography as a tool for studying reactive organic crystals : a feasibility study

J. Baruchel, M. Dudley, J. Sherwood, 1990 .

Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon.

M. Dudley, Jun Wu, F. F. Wang, 1990 .

Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique

P. Neudeck, M. Dudley, B. Raghothamachar, 2014 .

Characterization of 4H Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

P. Neudeck, M. Dudley, B. Raghothamachar, 2012 .

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2019, Materials Science Forum.

Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

C. Poweleit, M. Dudley, B. Skromme, 2002 .

Dynamic observations of dislocation generation at grain boundaries in ice

M. Dudley, I. Baker, Fuping Liu, 1993 .

Characterization Of Micropipes And Other Defect Structures In 6H-SiC Through Fluorescence Microscopy

M. Dudley, W. Vetter, T. Wong, 1995 .

Characterization of Prismatic Slip in PVT-Grown AlN Crystals

M. Dudley, B. Raghothamachar, R. Dalmau, 2022, Journal of Crystal Growth.

Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification

M. Khan, M. Dudley, J. Bai, 2006 .

White Beam Synchrotron Topographic Studies of the Effects of Localized Stress Fields on the Kinetics of Single Crystal Solid State Reactions.

M. Dudley, 1988 .

Dislocation-grain boundary interactions in ice crystals

Michael Dudley, Ian Baker, Fuping Liu, 1995 .

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

R. Davis, M. Dudley, J. Bai, 2005 .

M. Dudley, P. Gouma, P. Hartlieb, 2004 .

Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV

R. Dupuis, R. Davis, M. Dudley, 2004 .

Silicon Carbide Crystals — Part II: Process Physics and Modeling

M. Dudley, V. Prasad, Hui Zhang, 2003 .

Fabrication and characterization of polycrystalline WO3 nanofibers and their application for ammonia sensing.

Michael Dudley, Guan Wang, Pelagia-Irene Gouma, 2006, The journal of physical chemistry. B.

Seeded growth of AlN bulk crystals in m- and c-orientation

Balaji Raghothamachar, Michael Dudley, Rafael Dalmau, 2009 .

Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

P. Neudeck, M. Dudley, K. Kisslinger, 2016, Journal of Electronic Materials.

Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory

Michael Dudley, Weimin Si, C. Carter, 1997 .

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2020, Journal of Electronic Materials.

Optimization of 150 mm 4H SiC Substrate Crystal Quality

G. Chung, M. Dudley, B. Raghothamachar, 2018, Materials Science Forum.

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

M. Dudley, V. Prasad, Hui Zhang, 2002 .

Thermal system design and dislocation reduction for growth of wide band gap crystals: : application to SiC growth

M. Dudley, V. Prasad, Hui Zhang, 2003 .

The Effect of Surface Finish on the Dislocation Density in Sublimation grown SiC Layers

M. Skowronski, M. Dudley, W. Mitchel, 2000 .

Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

Michael Dudley, H. Lendenmann, Marek Skowronski, 2002 .

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2015 .

Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules

Balaji Raghothamachar, Michael Dudley, Stephen P. Beaudoin, 2005 .

Synchrotron White Beam Topography Studies of Residual Stress in SiC Single Crystal Wafers with Epitaxial Thin Films

J. D. Parsons, F. Chiang, M. Dudley, 1995 .

Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques

P. Neudeck, M. Dudley, R. Okojie, 2004 .

Dislocation motion around loaded notches in ice single-crystals

M. Dudley, I. Baker, D. Cullen, 2000 .

Dislocation motion around loaded notches in ice single crystals

M. Dudley, I. Baker, D. Cullen, 1999 .

EXPITAXIAL TILTING OF GAN GROWN ON VICINAL SURFACES OF SAPPHIRE

Michael Dudley, Russell D. Dupuis, U. Chowdhury, 2005 .

Crystal growth and characterization of epitaxial layers of laser and nonlinear optical materials for thin-disk and waveguide laser applications

G. Lifante, U. Griebner, M. Dudley, 2010 .

Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 Epitaxial Structures

M. Dudley, V. Petrov, M. Aguiló, 2009 .

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

Yi Chen, M. Dudley, R. Stahlbush, 2009 .

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy

M. Dudley, B. Raghothamachar, Yu Zhang, 2010 .

Chemical mechanical polishing for decoration and measurement of dislocations on freestanding GaN wafers

M. Dudley, P. Gouma, J. Bai, 2003 .

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

M. Dudley, B. Raghothamachar, Yu Yang, 2013 .

Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation

J. Lin, Hongxing Jiang, M. Dudley, 2005 .

High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2018, Materials Science Forum.

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Balaji Raghothamachar, Michael Dudley, Rafael Dalmau, 2014, Journal of Electronic Materials.

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

M. Dudley, B. Raghothamachar, R. Dalmau, 2012 .

The Czochralski growth of large-diameter La3Ga5.5Ta0.5O14 crystals along different orientations

M. Dudley, Jun Luo, D. Shah, 2006 .

Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide

M. Dudley, S. Sampayan, B. Raghothamachar, 2023, Defect and Diffusion Forum.

Synchrotron X-ray Topographic Characterization of Dislocations in 6H-SiC Axial Samples

M. Dudley, S. Sampayan, B. Raghothamachar, 2021, Journal of Crystal Growth.

The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substrates

Michael Dudley, Peter W. Norton, Louis G. Casagrande, 1995 .

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

Michael Dudley, Philip G. Neudeck, P. Neudeck, 1999 .

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Michael Dudley, Philip G. Neudeck, Christian Fazi, 1998 .

Extended SiC Defects: Polarized Light Microscopy Delineation and Synchrotron White-Beam X-Ray Topography Ratification

M. Dudley, T. Sudarshan, W. Vetter, 2003 .

Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC

M. Dudley, X. Huang, W. Vetter, 2003 .

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

Balaji Raghothamachar, Michael Dudley, Philip G. Neudeck, 2012 .

The growth and comparison of large-diameter vertical Bridgman CdZnTe and CdTe☆

M. Dudley, D. Larson, L. Casagrande, 1994 .

X-ray characterization of detached-grown germanium crystals

M. Dudley, M. Volz, B. Raghothamachar, 2006 .

Investigation of the cross-hatch pattern and localized defects in epitaxial HgCdTe

Yue Chen, R. Emerson, M. Dudley, 1998 .

Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

P. Heard, M. Dudley, M. Kuball, 2010 .

An investigation of phonon decay in B12As2 by Raman scattering spectroscopy

M. Dudley, Martin Kuball, J. Pomeroy, 2008 .

Crystal growth and characterization of CdTe grown by vertical gradient freeze

Balaji Raghothamachar, Michael Dudley, Sandor L. Lehoczky, 2008 .

The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport

M. Dudley, K. Durose, B. Raghothamachar, 2003 .

Rapid Structural Defect Mapping of Bulk II-VI Semiconductors Using White-Beam Synchrotron Topography and X-ray Rocking Curve Analysis

M. Dudley, L. Casagrande, D. D. Marzio, 1992 .

Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers

P. Neudeck, G. Beheim, M. Dudley, 2002 .

CFD Growth of 3C-SiC on 4H/6H Mesas

P. Neudeck, M. Skowronski, Xianrong Huang, 2006 .

High-resolution TEM observation of AlN grown on on-axis and off-cut SiC substrates

M. Dudley, J. Bai, X. Huang, 2006 .

Stresses experienced by AlN films grown on sapphire

M. Khan, J. Lin, Hongxing Jiang, 2005 .

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

R. Dupuis, R. Davis, M. Dudley, 2005 .

Synchrotron white-beam X-ray topography of ribonuclease S crystals.

M. Dudley, D. Gallagher, W. Vetter, 2002, Acta crystallographica. Section D, Biological crystallography.

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

Balaji Raghothamachar, Michael Dudley, Jie Zhang, 2012 .

Harmonic composition of synchrotron white-beam X-ray topographic back-reflection images of basal-cut silicon carbide single-crystal wafers

M. Dudley, W. Vetter, 1998 .

Assessment of Polishing-Related Surface Damage in Silicon Carbide

S. Ha, M. Skowronski, M. Dudley, 2002 .

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage ( 250 V ) 4 H – SiC p n Junction Diodes — Part I : DC Properties

Michael Dudley, Wei Huang, Philip G. Neudeck, 1999 .

Determination of Burgers Vector of Screw Dislocations in 6H-SiC Single Crystals by Synchrotron White Beam X-Ray Topography

C. Carter, M. Dudley, R. Glass, 1996 .

VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process

Michael Dudley, Vladislav V. Yakovlev, Serge Luryi, 2007 .

Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization

Yi Chen, M. Dudley, Da-Niu Cai, 2007 .

Design and fabrication of physical vapor transport system for the growth of SiC crystals

M. Dudley, V. Prasad, Hui Zhang, 2004 .

PVT Growth of 6H SiC Crystals and Defect Characterization

M. Dudley, V. Prasad, Hui Zhang, 2004 .

Process-Induced Deformations and Stacking Faults in 4H-SiC

Xianrong Huang, M. Dudley, R. Okojie, 2006 .

A universal computation method for two-beam dynamical X-ray diffraction.

Xianrong Huang, M. Dudley, 2003, Acta crystallographica. Section A, Foundations of crystallography.

Evaluation of Measurement Techniques for Asphalt Pavement Density and Permeability

Brian D. Prowell, Michael C. Dudley, M. Dudley, 2002 .

Automated Mapping of Micropipes in SiC Wafers Using Polarized-Light Microscope

R. Blasi, M. Dudley, B. Raghothamachar, 2018, Materials Science Forum.

Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates

Yi Chen, M. Dudley, M. Yoganathan, 2008 .

Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research

M. Dudley, T. Sudarshan, Xianyun Ma, 2004 .

Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

J. Sumakeris, M. Dudley, B. Raghothamachar, 2016 .

Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography

M. Dudley, M. Tagawa, Tomohisa Kato, 2021, SSRN Electronic Journal.

Quantitative analysis of screw dislocations in 6H−SiC single crystals

C. Carter, M. Dudley, R. Glass, 1997 .

X-ray topographic dislocation contrast visible in reflections orthogonal to the Burgers vectors of axial screw dislocations in hexagonal silicon carbide

M. Dudley, W. Vetter, 2001 .

X-ray magnifying imaging investigation of giant Burgers vector micropipe-dislocations in 4H-SiC

J. Baruchel, M. Dudley, J. Härtwig, 2003 .

Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique

Y. Makarov, M. Dudley, M. Spencer, 2006 .

Nucleation of threading dislocations in sublimation grown silicon carbide

M. Graef, M. Skowronski, M. Dudley, 2002 .

Prismatic Slip in PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2017, Journal of Electronic Materials.

Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability

M. Dudley, J. Bai, G. Dhanaraj, 2004 .

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2021, Journal of Electronic Materials.

Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P + N Junction Rectifiers

Michael Dudley, P. G. Neudeck, P. Neudeck, 1997 .

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2020 .

Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals

Michael Dudley, Marek Skowronski, S. Ha, 2002 .

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Jie Zhang, M. Loboda, G. Chung, 2014 .

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

M. Dudley, B. Raghothamachar, Hongyu Peng, 2023, Materials Science Forum.

Dislocations in 4 H ‐ SiC Substrates and Epilayers

M. Dudley, B. Raghothamachar, 2021, Wide Bandgap Semiconductors for Power Electronics.

Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications

M. Dudley, J. Zhang, E. Sanchez, 2016 .

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

M. Dudley, P. Klein, R. Myers-Ward, 2016 .

Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source

M. Dudley, M. Spencer, B. Raghothamachar, 2005 .

Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals

Michael Dudley, M. Dudley, R. Glass, 1997 .

Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC

M. Dudley, A. Soukhojak, B. Raghothamachar, 2023, Defect and Diffusion Forum.

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Jie Zhang, M. Loboda, G. Chung, 2014 .

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2013 .

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

M. Loboda, M. Dudley, B. Raghothamachar, 2012 .

Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates

A. Weber, M. Dudley, J. Oliver, 2006 .

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2020 .

Characterization and Mapping of Crystal Defects in Silicon Carbide

M. Dudley, W. T. Elkington, J. Chen, 2004 .

Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

M. Dudley, B. Raghothamachar, R. Dalmau, 2006 .

Assessment of orientation and extinction contrast contributions to the direct dislocation image

M. Dudley, X. Huang, W. Huang, 1999 .

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Jie Zhang, M. Loboda, G. Chung, 2015, Journal of Electronic Materials.

Defect Reduction Paths in SiC Epitaxy

Jie Zhang, M. Loboda, G. Chung, 2014 .

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

M. Loboda, G. Chung, M. Dudley, 2013, Journal of Electronic Materials.

Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals

M. Dudley, W. Vetter, 2001 .

Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers

M. Dudley, R. Stahlbush, B. Raghothamachar, 2023, Scripta Materialia.

Crucible Selection in AlN Bulk Crystal Growth

M. Dudley, B. Raghothamachar, R. Dalmau, 2003 .

Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers

M. Dudley, B. Raghothamachar, Hongyu Peng, 2023, Defect and Diffusion Forum.

Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers

M. Dudley, Jun Gyu Kim, B. Raghothamachar, 2018, Journal of Electronic Materials.

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Growth Mechanisms and Defect Structures of B12As2 Epilayers Grown on 4H-SiC Substrates

M. Dudley, Yimei Zhu, Lihua Zhang, 2011 .

Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films

M. Dudley, B. Raghothamachar, G. Dhanaraj, 2006 .

Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2012 .

Effects of Structural Defects on Diode Properties in 4H-SiC

M. Dudley, B. Skromme, S. Mahajan, 2002 .

Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

S. Saddow, M. Dudley, Y. Lo, 1998 .

Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer

M. Dudley, B. Raghothamachar, Yafei Liu, 2020 .

Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography

M. Dudley, B. Raghothamachar, Woongje Sung, 2023, Defect and Diffusion Forum.

Applications of femtosecond Bessel beams to laser ablation

Maxime Jacquot, John M. Dudley, François Courvoisier, 2013 .

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

P. Neudeck, M. Dudley, B. Raghothamachar, 2014 .

Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016 .

Characterization of defects in 3C-silicon carbide crystals

M. Dudley, W. Vetter, 2004 .

THE CONTRAST OF INCLUSIONS COMPARED WITH THAT OF MICROPIPES IN BACK-REFLECTION SYNCHROTRON WHITE BEAM TOPOGRAPHS OF SIC

M. Dudley, W. Vetter, 2004 .

Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide

M. Dudley, W. Vetter, 2003 .

Simulation of Threading Dislocation Images in X-ray Topographs of Silicon Carbide Homo-Epilayers

H. Tsuchida, I. Kamata, M. Dudley, 2005 .

Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC

M. Dudley, W. Vetter, 2002 .

Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography

S. Kennerly, M. Dudley, B. Raghothamachar, 2023, Defect and Diffusion Forum.

Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals

M. Dudley, W. Vetter, 2004 .

Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide

Yi Chen, M. Dudley, R. Ma, 2007 .

Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions

M. Skowronski, H. Lendenmann, M. Dudley, 2003 .

Micropipes in silicon carbide crystals: Do all screw dislocations have open cores?

M. Dudley, W. Vetter, 2000 .

MATERIAL DEFECTS IN 4H-SILICON CARBIDE DIODES

A. Hallén, M. Dudley, U. Zimmermann, 2003 .

Contrast Mechanism in Superscrew Dislocation Images on Synchrotron Back-Reflection Topographs

C. Carter, M. Dudley, W. Vetter, 1998 .

Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces

P. Neudeck, G. Beheim, M. Dudley, 2002 .

Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer

Yu Wang, M. Dudley, B. Skromme, 2006 .

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

M. Hopkins, M. Dudley, M. Ťapajna, 2010 .

Single-crystalline B12As2 on m-plane (11¯00) 15R-SiC

M. Dudley, Guan Wang, Yimei Zhu, 2008 .

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016 .

X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films

Michael Dudley, Hua-Shuang Kong, Calvin H. Carter, 1994 .

Rugged Electrical Power Switching in Semiconductors: A Systems Approach

Krishna Shenai, Michael Dudley, Robert F. Davis, 2014, Proceedings of the IEEE.

Thermally induced dislocation loops in polycrystalline ice

M. Dudley, I. Baker, Fuping Liu, 1995 .

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Jie Zhang, M. Loboda, G. Chung, 2015 .

Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

M. Loboda, G. Chung, M. Dudley, 2015, Journal of Electronic Materials.

Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices

P. Neudeck, M. Dudley, W. Vetter, 2003 .

Interaction between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

Yi Chen, M. Dudley, R. Stahlbush, 2007 .

Origins of twinned microstructures in B12As2 epilayers grown on(0001) 6H-SiC and their influence on physical properties

M. Dudley, Yimei Zhu, Lihua Zhang, 2009 .