Y. Hiraoka

Device characteristics of a quasi-SOI power MOSFET

Tatsuo Sakai, Yasushi Hiraoka, Satoshi Matsumoto, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

Study on the device characteristics of a quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding

T. Yachi, S. Matsumoto, T. Ishiyama, 1998 .

Radio-frequency performance of a state-of-the-art 0.5-/spl mu/m-rule thin-film SOI power MOSFET

S. Matsumoto, Y. Hiraoka, T. Sakai, 2001 .

A high-efficiency thin-film SOI power MOSFET having a self-aligned offset gate structure for multi-gigahertz applications

S. Matsumoto, Y. Hiraoka, T. Sakai, 2001 .