T. Langdo

发表

Monolithic integration of III-V materials and devices on silicon

Steven A. Ringel, Mayank T. Bulsara, Eugene A. Fitzgerald, 1999, Photonics West.

Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy

Jong-Ho Lee, D. Antoniadis, E. Fitzgerald, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

Thomas A. Langdo, Christopher W. Leitz, Eugene A. Fitzgerald, 1998 .

Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

D. Antoniadis, E. Fitzgerald, M. Currie, 2001 .

Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Dimitri A. Antoniadis, Thomas A. Langdo, Christopher W. Leitz, 2001 .

Preparation of novel SiGe-free strained Si on insulator substrates

G. Braithwaite, E. A. Fitzgerald, R. Hammond, 2002, 2002 IEEE International SOI Conference.

Relaxed silicon-germanium on insulator substrate by layer transfer

D. Antoniadis, M. Lee, E. Fitzgerald, 2001 .

High quality Ge on Si by epitaxial necking

Dimitri A. Antoniadis, Thomas A. Langdo, Christopher W. Leitz, 2000 .

High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers

Thomas A. Langdo, Eugene A. Fitzgerald, E. Fitzgerald, 1998 .

Dislocations in Relaxed SiGe/Si Heterostructures

E. Fitzgerald, M. Bulsara, M. Currie, 1999 .

Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates

J. Boeckl, E. Fitzgerald, M. Currie, 2003 .

Direct regrowth of thin strained silicon films on planarized relaxed silicon-germanium virtual substrates

K. Matthews, A. Lochtefeld, M. Rodder, 2006 .

1 Nanostructures Technology , Research and Applications

R. C. Fleming, J. M. Carter, H. Nayfeh, 2001 .

Embedded package wafer bow elimination techniques

T. Langdo, J. Thompson, G. Tepolt, 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

M. Lee, E. Fitzgerald, T. Langdo, 2002 .

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

E. Fitzgerald, T. Langdo, G. Taraschi, 2005 .

High Quality Germanium Photodiodes on Silicon Substrates Using an Intermediate Chemical Mechanical Polishing Step

E. Fitzgerald, M. Currie, S. Samavedam, 1997 .

Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding and Metastable Stop Layers

Thomas A. Langdo, Eugene A. Fitzgerald, Gianni Taraschi, 2004 .

Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back

D. Antoniadis, E. Fitzgerald, M. Currie, 2002 .

High temperature mechanical behavior of porous ceria and ceria‐based solid‐oxide fuel cells

E. Wachsman, T. Langdo, T. Hays, 2019, Journal of the American Ceramic Society.

Strained Si on insulator technology: from materials to devices

Dimitri A. Antoniadis, Thomas A. Langdo, Isaac Lauer, 2004 .

SiGe-free strained Si on insulator by wafer bonding and layer transfer

M. Bulsara, M. Currie, A. Lochtefeld, 2003 .

Relaxed template for fabricating regularly distributed quantum dot arrays

Mayank T. Bulsara, Thomas A. Langdo, Eugene A. Fitzgerald, 1997 .

LETTER TO THE EDITOR: Film thickness constraints for manufacturable strained silicon CMOS

Jung Houn Yap, M. Bulsara, M. Currie, 2004 .

Dislocation dynamics in relaxed graded composition semiconductors

Mayank T. Bulsara, Andrew Y. Kim, Thomas A. Langdo, 1999 .

Strained-Silicon on Silicon and Strained-Silicon on Silicon-Germanium on Silicon by Relaxed Buffer Bonding

Thomas A. Langdo, Eugene A. Fitzgerald, Gianni Taraschi, 2006 .

High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

Steven A. Ringel, S. M. Ting, Thomas A. Langdo, 1998 .

Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates

Steven A. Ringel, S. M. Ting, Thomas A. Langdo, 1998 .

Fully depleted n-MOSFETs on supercritical thickness strained SOI

I. Lauer, G. Braithwaite, A. Lochtefeld, 2004, IEEE Electron Device Letters.

Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates

A. Khan, M. González, M. Hudait, 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..

High efficiency GaAs-on-Si solar cells with high V/sub oc/ using graded GeSi buffers

Mantu K. Hudait, David M. Wilt, Thomas A. Langdo, 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

Silicon-Germanium multi-quantum well photodetectors in the near infrared.

C. Burrus, K. Saraswat, J. Chen, 2012, Optics express.

The Crystallographic Properties of Strained Silicon Measured by X-Ray Diffraction

T. Langdo, M. Erdtmann, 2006 .

Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs

M. Bulsara, M. Currie, V. Yang, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.