J. Weyher

发表

Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions: I. Influence of composition on etching behaviour

J. Weyher, J. V. D. Ven, 1983 .

Electrochemical etching of highly conductive GaN single crystals

X. Xia, J. Weyher, J. Kelly, 2001 .

Detection of Hepatitis B virus antigen from human blood: SERS immunoassay in a microfluidic system.

J. Weyher, A. Kamińska, K. Winkler, 2015, Biosensors & bioelectronics.

Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

M. Boćkowski, J. Weyher, Z. Romanowski, 2002 .

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

M. Boćkowski, J. Weyher, L. Konczewicz, 2012 .

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

M. Boćkowski, J. Weyher, R. Kucharski, 2013 .

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

M. Boćkowski, J. Weyher, R. Kucharski, 2014 .

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

M. Albrecht, J. Weyher, R. Kucharski, 2013 .

Recent advances in defect-selective etching of GaN

P. D. Brown, J. Weyher, T. Wosinski, 2000 .

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

P. Larsen, J. Weyher, L. Macht, 2005 .

Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods

J. Weyher, L. Macht, 2004 .

Modulated optical sensitivity with nanostructured gallium nitride

J. Weyher, T. Paskova, A. Ivanisevic, 2015 .

Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

M. Boćkowski, J. Weyher, R. Kucharski, 2015 .

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

M. Boćkowski, J. Weyher, S. Porowski, 2003 .

Low dislocation density, high power InGaN laser diodes

M. Boćkowski, J. Weyher, P. Perlin, 2004 .

Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications

M. Fiałkowski, J. Weyher, Volodymyr Sashuk, 2011 .

Au–Cu Alloyed Plasmonic Layer on Nanostructured GaN for SERS Application

J. Weyher, A. Kudelski, I. Dzięcielewski, 2016 .

GaN-based platforms with Au-Ag alloyed metal layer for surface enhanced Raman scattering

J. Weyher, R. Hołyst, A. Kamińska, 2012 .

Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

J. Weyher, F. Tichelaar, H. Zandbergen, 2001 .

Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy

P. Larsen, J. Weyher, P. Christianen, 2001 .

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

J. Weyher, P. Hageman, H. Ashraf, 2009 .

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

M. Boćkowski, J. Weyher, E. Grzanka, 2016 .

Defect-selective etching of GaN in a modified molten bases system

Izabella Grzegory, Grzegorz Kamler, E. Jezierska, 2002 .

Evaluation of selected SERS substrates for trace detection of explosive materials using portable Raman systems

B. Jankiewicz, J. Weyher, Z. Mierczyk, 2019, Vibrational Spectroscopy.

The importance of structural inhomogeneity in GaN thin films

J. Weyher, Z. Liliental-Weber, R. D. Reis, 2016 .

Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed

M. Boćkowski, J. Weyher, R. Kucharski, 2015 .

Photo-etching of GaN: Revealing nano-scale non-homogeneities

J. Weyher, P. Perlin, J. Smalc-Koziorowska, 2015 .

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

M. Boćkowski, J. Weyher, R. Kucharski, 2014 .

HVPE-GaN growth on misoriented ammonothermal GaN seeds

M. Boćkowski, J. Weyher, R. Kucharski, 2014 .

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

M. Boćkowski, J. Weyher, A. Nikolenko, 2014 .

Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

M. Boćkowski, J. Weyher, R. Kucharski, 2014 .

Defect sensitive etching of nitrides: appraisal of methods

J. Weyher, 2012 .

Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates

E. Jezierska, P. Larsen, J. Weyher, 2007 .

Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

J. Weyher, 2006 .

Selective etching of dislocations in violet-laser diode structures

J. Weyher, R. Czernecki, M. Leszczynski, 2006 .

Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers

J. Weyher, R. Czernecki, I. Grzegory, 2005 .

Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD

P. Larsen, J. Weyher, P. Hageman, 2005 .

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

P. Larsen, J. Weyher, P. Hageman, 2005 .

Defect‐selective etching of SiC

J. Weyher, J. Pernot, J. Borysiuk, 2005 .

Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures

J. Weyher, I. Grzegory, J. Borysiuk, 2004 .

TEM observation of nanopipes in heteroepitaxial GaN

E. Jezierska, J. Weyher, J. Borysiuk, 2004 .

Characterization of GaN single crystals by defect-selective etching

J. Weyher, I. Grzegory, J. Borysiuk, 2003 .

DEFECT-SELECTIVE ETCHING OF III-V AND WIDE GAP SEMICONDUCTORS

J. Weyher, 2003 .

Chemical polishing of bulk and epitaxial GaN

J. Weyher, I. Grzegory, S. Porowski, 1997 .

Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

M. Seelmann-Eggebert, J. Weyher, J. Rouviere, 1998 .

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

J. Weyher, T. Wosinski, H. Strunk, 2001 .

Final polishing of Ga-polar GaN substrates using reactive ion etching

J. Weyher, F. Karouta, I. Grzegory, 1999 .

Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

M. Seelmann-Eggebert, J. Weyher, A. Rar, 1997 .

Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching

T. Conard, J. Weyher, J. Kelly, 2022, The Journal of Physical Chemistry C.

Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed

M. Boćkowski, J. Weyher, S. Sintonen, 2019, Japanese Journal of Applied Physics.

Photoetching Mechanisms of GaN in Alkaline S2O8 2 − Solution

J. Weyher, J. Kelly, D. H. V. Dorp, 2009 .

P. Larsen, J. Weyher, P. Christianen, 2000 .

On the hydrophobicity of modified Ga-polar GaN surfaces

J. Weyher, I. Dzięcielewski, W. Dzwolak, 2013 .

The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN

P. Larsen, J. Weyher, P. Hageman, 2002 .

On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

J. Weyher, E. Vlieg, P. Hageman, 2009 .

Photoelectrochemistry and Etching of SiC: a Comparison with Si

J. Weyher, J. Kelly, D. H. V. Dorp, 2007, ECS Transactions.

A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

J. Weyher, C. Frigeri, O. Martínez, 2010 .

Nanostructured GaN sensors for Surface Enhanced Raman Spectroscopy

B. Jankiewicz, J. Weyher, P. Andersson, 2019, Materials Science in Semiconductor Processing.

Relationship between the nano-structure of GaN surfaces and SERS efficiency: Chasing hot-spots

B. Jankiewicz, J. Weyher, A. Kudelski, 2019, Applied Surface Science.

The liquid surface tension as a factor influencing the VLS growth of silicon crystals

J. Weyher, 1975 .

Improvement of the optical and structural properties of MOCVD grown GaN on sapphire by an in-situ SiN treatment

P. Larsen, J. Weyher, S. Haffouz, 2001 .

Spatially resolved study of dislocations in Si-doped LEC GaAs by DSL, PL and EBIC

J. Weyher, C. Frigeri, P. V. D. Wel, 1992 .

Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing

J. Weyher, J. Kelly, D. H. V. Dorp, 2015 .

An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology

P. Larsen, J. Weyher, J. Kelly, 2005 .

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

P. D. Brown, P. Larsen, C. Boothroyd, 1999 .

Some notes on the growth kinetics and morphology of VLS silicon crystals grown with platinum and gold as liquid-forming agents

J. Weyher, 1978 .

Structure of VLS silicon crystals grown with platinum and gold

J. Weyher, M. Surowiec, 1978 .

Anodic etching of SiC in alkaline solutions

J. Weyher, J. Kelly, D. V. van Dorp, 2007 .

Properties of thermally annealed undoped and sulphur doped InP wafers

J. Weyher, R. Fornari, C. Corbel, 1995 .

Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

J. Schermer, J. Weyher, A. Zauner, 2002 .

On the existence of submicron diameter current shunts in morphologically perfect device layers

H. Liu, J. Weyher, E. Dupont, 2010 .

Enhanced Raman spectra of black dye N719 on GaN nanowires

J. Weyher, J. Lombardi, Cyril Muehlethaler, 2018, Applied Surface Science.

Revealing of defects in InP by shallow (submicron) photoetching

J. Weyher, L. Giling, 1985 .

Defect-selective etching of semiconductors

J. Weyher, J. Kelly, 2010 .

Surface-enhanced Raman scattering used to study the structure of layers formed on metal surfaces from single-stranded DNA and 6-mercaptohexan-1-ol: influence of hybridization with the complementary DNA and influence of the metal substrate

Aleksandra M. Michalowska, J. Weyher, A. Kudelski, 2022, RSC advances.

Selective etching and photoetching of GaAs in CrO3-HF aqueous solutions: III. Interpretation of defect-related etch figures

J. Weyher, J. V. D. Ven, 1986 .

Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition

P. Larsen, J. Weyher, P. Hageman, 2008 .

Recent advances in the assessment of GaAs substrate quality by scanning photoluminescence

M. Garrigues, J. Weyher, S. Krawczyk, 1993 .

Microdefect Studies of Fe-Doped Semi-Insulating Inp

J. Weyher, C. Frigeri, R. Fornari, 1992, Proceedings of the 7th Conference on Semi-insulating III-V Materials,.

Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching

Boleslaw Lucznik, Izabella Grzegory, Sylwester Porowski, 2008 .

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

J. Baruchel, A. Danilewsky, M. Boćkowski, 2022, Materials.

Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed

M. Boćkowski, J. Weyher, L. Kirste, 2022, Materials.

Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in Lec GaAs.

J. Weyher, C. Frigeri, L. Zanotti, 1988 .

Microtomography observation of precipitates in semi-insulating GaAs materials

J. Weyher, M. Castagné, J. Bonnafé, 1988 .

Recognition and mapping of microdefects by photoetching, laser-scattering tomography and photoluminescence in SI undoped GaAs after different ingot-annealing treatments

J. Weyher, M. Baumgartner, L. S. Dang, 1992 .

Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs

J. Weyher, P. Franzosi, K. Sonnenberg, 1998 .

A study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques

J. Weyher, C. Frigeri, L. F. Sanz, 1999 .

New strategy for the gene mutation identification using surface enhanced Raman spectroscopy (SERS).

J. Weyher, A. Kudelski, S. Góźdź, 2019, Biosensors & bioelectronics.

Step-flow growth mode instability of N-polar GaN under N-excess

M. Boćkowski, J. Weyher, M. Kryśko, 2013 .

Role of dislocations in nitride laser diodes with different indium content

J. Weyher, P. Perlin, J. Smalc-Koziorowska, 2021, Scientific reports.

HBr-K2Cr2O7-H2O etching system for indium phosphide

J. Weyher, R. Fornari, T. Görög, 1994 .

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

M. Albrecht, M. Boćkowski, J. Weyher, 2013 .

Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

J. Schermer, P. Larsen, M. Plomp, 2000 .

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Herbert Zirath, Vincent Desmaris, P. K. Larsen, 2006 .

Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method

J. Weyher, C. Frigeri, P. V. D. Wel, 1990 .

High spatial resolution photoluminescence studies of dislocations in Si‐doped, liquid‐encapsulated Czochralski GaAs

E. Visser, J. Weyher, P. V. D. Wel, 1990 .

High resolution electron microscopy and etching study of twins in GaAs

J. Weyher, H. Zandbergen, J. V. Landuyt, 1987 .

Influence of substrate defects on the structure of epitaxial GaAs grown by MOCVD

J. Weyher, J. V. D. Ven, 1988 .

Influence of Si and S doping on structural defects in LEC-grown gallium arsenide

J. Weyher, R. Fornari, L. Zanotti, 1986 .

Study of decoration microdefects in lec-grown Si-doped GaAs crystals by selective photoetching and laser scattering tomography

J. Weyher, L. Zanotti, G. Frigerio, 1990 .

Structural and electrical characteristics of undoped LEC GaAs crystals grown from slightly Ga-rich melts: a new approach

J. Weyher, C. Frigeri, P. van der Wel, 1992, Proceedings of the 7th Conference on Semi-insulating III-V Materials,.

On the absence of decoration As precipitates at dislocations in Te-doped GaAs

J. Weyher, J. Jiménez, C. Frigeri, 2000 .

A study of dislocations, precipitates, and deep level EL2 in LEC GaAs grown under Ga-rich conditions

J. Weyher, C. Frigeri, H. Alt, 1993 .

Electron‐beam‐induced current and photoetching investigations of dislocations and impurity atmospheres in n‐type liquid‐encapsulated Czochralski GaAs

J. Weyher, C. Frigeri, 1989 .

Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF Solutions

J. Weyher, J. V. D. Ven, J. Kelly, 1986 .

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

Izabella Grzegory, Sylwester Porowski, J. Weyher, 2002 .

Thick GaN layers grown by HVPE : Influence of the templates

J. Weyher, P. Hageman, H. Ashraf, 2008 .

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

J. Weyher, E. Vlieg, P. Hageman, 2010 .

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

J. Weyher, J. Misiewicz, R. Kudrawiec, 2010 .

Orthodox etching of HVPE-grown GaN

Grzegorz Nowak, Richard J. Molnar, Izabella Grzegory, 2007 .

Charge-Transfer Mapping of Nanostructured GaN/Ag Surfaces using Surface Enhanced Raman Spectroscopy

J. Weyher, J. Lombardi, O. Kirkland, 2020 .

Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

M. Boćkowski, J. Weyher, L. Kirste, 2023, Materials.

The K2S2O8-KOH photoetching system for GaN

F. D. Tichelaar, A. Khachapuridze, J. Weyher, 2010 .

The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

J. Weyher, L. Konczewicz, R. Lewandowska, 2007 .

On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals

M. Boćkowski, J. Weyher, R. Kucharski, 2022, Crystals.

Extended Defects in SiC: Selective Etching and Raman Study

J. Weyher, J. Freitas, A. Tiberj, 2023, Journal of Electronic Materials.

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

V. Strelchuk, J. Weyher, G. Salamo, 2017, Nanoscale Research Letters.

Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure

M. Albrecht, J. Weyher, O. Belyaev, 2016 .

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

M. Bockowski, I. Grzegory, M. Amilusik, 2015, Photonics West - Optoelectronic Materials and Devices.

Compound Semiconductors: Characterization by Chemical Etching

J. Weyher, 2014 .

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

J. Weyher, I. Grzegory, G. Nowak, 2012 .

Revealing extended defects in HVPE-grown GaN

J. Weyher, J. Smalc-Koziorowska, I. Grzegory, 2010 .

Etching, Raman and PL study of thick HVPE-grown GaN

J. Weyher, R. Lewandowska, I. Grzegory, 2006 .

Study of Segregation Inhomogeneities in GaAs by Means of DSL Photoetching and EBIC Measurements

J. Weyher, C. Frigeri, L. Zanotti, 1989 .

Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffraction

J. Weyher, H. Zandbergen, A.R.A. Zauner, 2000 .

Influence of sandwich-type DNA construction strategy and plasmonic metal on signal generated by SERS DNA sensors.

J. Weyher, A. Kudelski, A. Nowicka, 2023, Spectrochimica Acta Part A - Molecular and Biomolecular Spectroscopy.

Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs

J. Weyher, C. Frigeri, 1990 .

Complementary study of defects in GaN by photo-etching and TEM

H. W. Zandbergen, F. D. Tichelaar, P. K. Larsen, 2002 .

Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers

J. Weyher, W. Strupinski, A. Olszyna, 2008 .

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

B. Jankiewicz, J. Weyher, B. Budner, 2023, Beilstein journal of nanotechnology.

TEM study of the origin of the surface microroughness in DSL photoetched Si-implanted GaAs wafers

M. Potter, J. Weyher, C. Frigeri, 1991 .

short note: Blue Laser on High N_2 Pressure-Grown Bulk GaN

M. Boćkowski, J. Weyher, P. Perlin, 2001 .

Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes

J. Weyher, W. Jantz, S. Müller, 1997 .

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

M. Boćkowski, J. Weyher, J. Smalc-Koziorowska, 2014 .

Bulk GaN crystals and wafers grown by HVPE without intentional doping

J. Weyher, I. Grzegory, S. Porowski, 2009 .

Defects in GaN single crystals and homoepitaxial structures

Boleslaw Lucznik, Grzegorz Nowak, Izabella Grzegory, 2005 .

Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate

P. Larsen, J. Weyher, S. Haffouz, 2003 .

Raman and cathodoluminescence study of dislocations in GaN

J. Weyher, T. Wosinski, I. Grzegory, 2002 .

Crystallographic Defects in (001) GaAs Epitaxial Layers Grown by MOCVD

J. Weyher, J. V. D. Ven, H. Ikink, 1987 .

Kinetics and Morphology of GaAs Etching in Aqueous CrO3- HF Solutions.

J. Weyher, J. V. D. Ven, J. Kelly, 1986 .

Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching

M. de Potter, J. Weyher, W. V. van Sark, 1990 .

Threading dislocations in MBE grown AlInSb metamorphic buffers: Revealed and counted

J. Weyher, Yin Shi, D. Gosselink, 2017 .

Nanopipes in GaN : Photo-etching and TEM study

J. Weyher, F. Tichelaar, H. Zandbergen, 2004 .

Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions

J. Weyher, W. V. Enckevort, 1983 .

Revealing of defects in CdTe crystals by DSL etching

J. Weyher, F. Bissoli, A. Zappettini, 2005 .

Analysis of peculiar structural defects created in GaAs by diffusion of copper

J. Weyher, C. Frigeri, P. Hiesinger, 2000 .

Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering

J. Weyher, C. Frigeri, W. Jäger, 1997 .

A study of dislocations in GaAs:Te using electron and optical beams

J. Weyher, C. Frigeri, P. Martin, 1996 .

Structural characterization of heavily Zn-doped liquid encapsulated Czochralski InP

C. Ferrari, J. Weyher, C. Frigeri, 1994 .

DSL photoetching and near infrared phase contrast microscopy on grown-in defects in Si doped LEC GaAs

J. Weyher, P. Montgomery, 1990 .

TEM and DSL photoetching investigations of Si-implanted LEC GaAs substrates

M. Potter, J. Weyher, C. Frigeri, 1990 .

Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

P. Larsen, J. Weyher, S. Haffouz, 2001 .

HVPE-GaN growth on ammonothermal GaN crystals

Mikolaj Amilusik, Tomasz Sochacki, Boleslaw Lucznik, 2013, Photonics West - Optoelectronic Materials and Devices.

Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching

F. Karouta, J. Weyher, S. Porowski, 1999 .