I. Hayashi

发表

GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature

I. Hayashi, M. Panish, 1970 .

Degradation of (Ga·Al)As double heterostructure diode lasers*

I. Hayashi, Y. Nannichi, 1974 .

Horizontal Mode Deformation and Anomalous Lasing Properties of Stripe Geometry Injection Lasers–Experiment

R. Lang, Kohroh Kobayashi, I. Hayashi, 1977 .

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

I. Hayashi, M. Panish, P. Foy, 1970 .

An AlGaAs window structure laser

I. Hayashi, H. Yonezu, M. Ueno, 1979, IEEE Journal of Quantum Electronics.

Germanium‐Doped Gallium Arsenide

I. Hayashi, B. Schwartz, F. Rosztoczy, 1970 .

P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs

A. Cho, I. Hayashi, 1971 .

Chapter 17 – FUTURE OEICs: THE BASIS FOR PHOTOELECTRONIC INTEGRATED SYSTEMS*

I. Hayashi, 1995 .

Degradation mechanism of (Al · Ga)As double‐heterostructure laser diodes

I. Hayashi, K. Nishida, Y. Nannichi, 1974 .

A Limitation on Repetition Rate of Pulsations of Junction Lasers Due to the Repetitively 9-Switched Mechanism

I. Hayashi, M. Panish, P. Foy, 1973 .

Highly Uniform Alx Ga1−x As Double‐Heterostructure Lasers and Their Characteristics at Room Temperature

B. Miller, R. Capik, I. Hayashi, 1971 .

Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection Lasers

I. Hayashi, M. Panish, F. Reinhart, 1971 .

Unstable horizontal transverse modes and their stabilization with a new stripe structure

R. Lang, Kohroh Kobayashi, I. Hayashi, 1977 .

New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization –A Refractive Index Guiding with Zn Doping

R. Lang, Kohroh Kobayashi, I. Hayashi, 1977 .

Epitaxy of silicon doped gallium arsenide by molecular beam method

A. Cho, I. Hayashi, 1971 .

High optical power density emission from a ’’window‐stripe’’ AlGaAs double‐heterostructure laser

I. Hayashi, H. Yonezu, I. Sakuma, 1979 .

Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber Method

T. Mizutani, I. Hayashi, T. Yuasa, 1980 .

DOUBLE‐HETEROSTRUCTURE INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2

Morton B. Panish, I. Hayashi, I. Hayashi, 1970 .

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

I. Hayashi, M. Panish, F. Reinhart, 1971 .

Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers

I. Hayashi, M. Panish, S. Sumski, 1971 .

GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs

B. Miller, I. Hayashi, P. Foy, 1972 .

A technique for the preparation of low-threshold room-temperature GaAs laser diode structures

I. Hayashi, M. Panish, S. Sumski, 1969 .

Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems

Izuo Hayashi, I. Hayashi, 1993 .

Heterostructure lasers

I. Hayashi, I. Hayashi, 1984, IEEE Transactions on Electron Devices.

Heterostructure Junction Lasers

I. Hayashi, M. Panish, 1974 .

Reproducible Liquid‐Phase‐Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser Diodes

B. Miller, R. Capik, I. Hayashi, 1972 .

Internal Q switching in GaAs- Ga x Al 1-x As heterostructure lasers

I. Hayashi, I. Hayashi, E. Ulmer, 1970 .

A low-threshold room-temperature injection laser

I. Hayashi, I. Hayashi, M. Panish, 1969 .

Recent progress in semiconductor lasers — cw GaAs lasers are now ready for new applications

I. Hayashi, 1974 .

Surface structures and photoluminescence of molecular beam epitaxial films of GaAs

A. Cho, I. Hayashi, 1971 .

Effect of band shapes on carrier distribution at high temperature

I. Hayashi, 1968 .

Lattice Mismatch Study of LPE‐Grown InGaPAs on ( 001 ) ‐ InP Using X‐Ray Double‐Crystal Diffraction

I. Hayashi, J. Matsui, K. Onabe, 1979 .

A New Class of Diode Lasers

I. Hayashi, M. Panish, 1971 .

Additional data on the effect of doping on the lasing characteristics of GaAs Al x Ga 1-x As double-heterostructure lasers

B. Miller, I. Hayashi, P. Foy, 1973 .

Impacts of optoelectronics technology on ULSI

I. Hayashi, I. Hayashi, 1990, Digest of Technical Papers., 1990 Symposium on VLSI Circuits.

Collaborative semiconductor research in Japan

I. Hayashi, M. Hirano, Y. Katayama, 1989, Proc. IEEE.