T. Terakado

Lasing characteristics of improved GaInAsP/InP surface emitting injection lasers

K. Iga, H. Soda, T. Terakado, 1983 .

Turn-off characteristics of bistable laser diode

A. Suzuki, A. Tomita, T. Terakado, 1986 .

Submilliamp threshold 1.3 /spl mu/m strained MQW lasers with novel p-substrate buried-heterostructure grown by MOVPE using TBA and TBP

T. Terakado, T. Torikai, Takahiro Nakamura, 1995 .

5:1 on‐off contrast InGaAs/InP multiple quantum well Fabry–Perot étalon modulator

A. Suzuki, A. Tomita, T. Terakado, 1989 .

Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

T. Terakado, T. Nakamura, T. Torikai, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

T. Terakado, T. Torikai, Takahiro Nakamura, 1994 .

Monolithically integrated high-speed light source using 1.3-µm wavelength DFB-DC-PBH laser

T. Terakado, Kenichi Kasahara, S. Murata, 1986 .

An experiment on high-speed optical time-division switching

Akira Suzuki, Shuji Suzuki, T. Terakado, 1986 .