Yu Zhu

发表

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

W. Haensch, J. Tersoff, A. Franklin, 2015, Science.

High-frequency, scaled graphene transistors on diamond-like carbon

F. Xia, K. Jenkins, P. Avouris, 2011, Nature.

State-of-the-art graphene high-frequency electronics.

C. Dimitrakopoulos, F. Xia, K. Jenkins, 2012, Nano letters.

Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics.

W. Haensch, Shu-jen Han, G. Tulevski, 2013, Nature nanotechnology.

Modeling of void formation in phase change memory devices

C. Lam, Sangbum Kim, Yu Zhu, 2020 .

Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber

Supratik Guha, Oki Gunawan, Nestor A. Bojarczuk, 2013 .

Beyond 11% Efficiency: Characteristics of State‐of‐the‐Art Cu2ZnSn(S,Se)4 Solar Cells

Tayfun Gokmen, Oki Gunawan, Teodor K. Todorov, 2013 .

Self‐Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer

Chung Lam, Sangbum Kim, Matthew BrightSky, 2018, Advanced materials.

Generalized Noise Study of Solid-State Nanopores at Low Frequencies.

T. Sajavaara, Shi-Li Zhang, Yu Zhu, 2017, ACS sensors.

Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

Supratik Guha, Nestor A. Bojarczuk, Byungha Shin, 2012 .

Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation

Yu Zhu, N. Bojarczuk, S. Guha, 2014 .

Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency

V. Deline, L. Romankiw, O. Gunawan, 2014 .

Hydrazine-Processed Ge-Substituted CZTSe Solar Cells

D. Mitzi, O. Gunawan, Yu Zhu, 2012 .

Low band gap liquid-processed CZTSe solar cell with 10.1% efficiency

Tayfun Gokmen, Oki Gunawan, Teodor K. Todorov, 2012 .

High Temperature Seebeck Coefficient and Electrical Resistivity of Ge$_{2}$Sb$_{2}$Te$_{5}$ Thin Films

Helena Silva, Ali Gokirmak, Chung H. Lam, 2012 .

Vertical Light-Emitting Diode Fabrication by Controlled Spalling

Can Bayram, Keith E. Fogel, Paul A. Lauro, 2013 .

Carbon nanotube transistors scaled to a 40-nanometer footprint

Jerry Tersoff, Shu-Jen Han, J. Tersoff, 2017, Science.

A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization

Chung Lam, Koukou Suu, Matthew BrightSky, 2016, IEEE Transactions on Electron Devices.

Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency

Wei Wang, Tayfun Gokmen, Mark T. Winkler, 2014 .

Subtractive W contact and local interconnect co-integration (CLIC)

Michael A. Guillorn, Eric A. Joseph, Sebastian U. Engelmann, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

Andrew J. Kellock, Shi-Li Zhang, C. Lavoie, 2010 .

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

A. Kellock, J. Jordan-Sweet, C. Lavoie, 2010 .

Cubic Phase GaN on Nano‐grooved Si (100) via Maskless Selective Area Epitaxy

M. Razeghi, J. Ott, Yu Zhu, 2014 .

Phase-Change Materials; the Challenges for TEM

C. B. Carter, Yu Zhu, K. Jungjohann, 2018, Microscopy and Microanalysis.

Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS

C. Cabral, M. Frank, C. Ortolland, 2016, IEEE Electron Device Letters.

CMOS-Compatible Self-Aligned In0.53Ga0.47As MOSFETs With Gate Lengths Down to 30 nm

R. M. Martin, E. Joseph, M. Frank, 2014, IEEE Transactions on Electron Devices.

Over 12% efficiency Cu2ZnSn(SeS)4 solar cell via hybrid buffer layer

D. Mitzi, O. Gunawan, Yu Zhu, 2014, Photovoltaic Specialists Conference.

Novel Deposition Methods

D. Milliron, Yu Zhu, Qiang Huang, 2009 .

Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device Measurements

C. Lam, Yu Zhu, K. Cil, 2013, IEEE Transactions on Electron Devices.

High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films

C. Lam, Yu Zhu, A. Anwar, 2017 .

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

C. Cabral, C. Lavoie, J. Newbury, 2013, IEEE Electron Device Letters.

A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications

Chung Lam, Scott C. Lewis, Yutaka Nakamura, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

Vapor–Solid–Solid Growth of NiSi$_2$ Nanocrystals for Memory Application

J. Yarmoff, Yu Zhu, Jianlin Liu, 2011, IEEE Transactions on Nanotechnology.

Multifinger Embedded T-Shaped Gate Graphene RF Transistors With High $f_{\rm MAX}/f_{T}$ Ratio

Keith A. Jenkins, Shu-Jen Han, Darsen Lu, 2013, IEEE Electron Device Letters.

Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy

Josephine B. Chang, M. Khater, M. Guillorn, 2014, IEEE Electron Device Letters.

High-$\kappa$/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

W. Haensch, C. Lavoie, V. Narayanan, 2010, IEEE Electron Device Letters.

Influence of Bottom Contact Material on the Selective Chemical Vapor Deposition of Crystalline GeSbTe Alloys

M. Breitwisch, C. Lam, R. Cheek, 2010 .

State-of-the-art graphene high-frequency electronics.

C. Dimitrakopoulos, F. Xia, K. Jenkins, 2012, Nano letters.