Hong-Yu Chen

发表

3D vertical RRAM - Scaling limit analysis and demonstration of 3D array operation

Shimeng Yu, H. Wong, Jinfeng Kang, 2013, 2013 Symposium on VLSI Technology.

A 1TnR array architecture using a one-dimensional selection device

H. Wong, Jiale Liang, Chi-Shuen Lee, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Investigation of statistical retention of filamentary analog RRAM for neuromophic computing

Shimeng Yu, Huaqiang Wu, Ning Deng, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

Shimeng Yu, Ali Javey, Hong-Yu Chen, 2011, IEEE Transactions on Electron Devices.

Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

Shimeng Yu, Xiaohui Liu, Jinfeng Kang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Metal oxide-resistive memory using graphene-edge electrodes

Hong-Yu Chen, Zizhen Jiang, H. Philip Wong, 2015, Nature Communications.

Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

H. Wong, Yezhou Yang, T. Ren, 2014, Nano letters.

Atomically thin graphene plane electrode for 3D RRAM

H. Wong, Hong-Yu Chen, Zizhen Jiang, 2014, 2014 IEEE International Electron Devices Meeting.

Monitoring oxygen movement by Raman spectroscopy of resistive random access memory with a graphene-inserted electrode.

Shimeng Yu, H. Wong, Jinfeng Kang, 2013, Nano letters.

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Shimeng Yu, H. Wong, Jinfeng Kang, 2013, ACS nano.

Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration

H. Wong, Y. Nishi, Liang Zhao, 2014, 2014 IEEE International Electron Devices Meeting.

Air-stable technique for fabricating n-type carbon nanotube FETs

Hai Wei, H.-S. Philip Wong, Subhasish Mitra, 2011, 2011 International Electron Devices Meeting.

Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory

Shimeng Yu, He Tian, Tian-Ling Ren, 2012, 2012 International Electron Devices Meeting.

Efficient metallic carbon nanotube removal readily scalable to wafer-level VLSI CNFET circuits

Hai Wei, Jie Zhang, Subhasish Mitra, 2010, 2010 Symposium on VLSI Technology.

Variability in carbon nanotube transistors: improving device-to-device consistency.

Davood Shahrjerdi, Wilfried Haensch, Hong-Yu Chen, 2012, ACS nano.

3-D Cross-Point Array Operation on ${\rm AlO}_{y}/{\rm HfO}_{x}$ -Based Vertical Resistive Switching Memory

Shimeng Yu, Jinfeng Kang, Rui Liu, 2014, IEEE Transactions on Electron Devices.

A 1.4µA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application

Jiale Liang, Rakesh Gnana David Jeyasingh, Hong-Yu Chen, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Advancements with carbon nanotube digital systems

H. Wong, S. Mitra, N. Patil, 2014, IEEE International Interconnect Technology Conference.

Novel graphene-based devices

H. Wong, T. Ren, H. Tian, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

Carbon nanotube computer

H.-S. Philip Wong, Subhasish Mitra, Gage Hills, 2013, Nature.

Sensor-to-Digital Interface Built Entirely With Carbon Nanotube FETs

Hai Wei, Georges G. E. Gielen, H.-S. Philip Wong, 2014, IEEE Journal of Solid-State Circuits.

Increasing the semiconducting fraction in ensembles of single-walled carbon nanotubes

H.-S. Philip Wong, Albert Lin, Hong-Yu Chen, 2012 .

An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes

Jiale Liang, Hong-Yu Chen, R. G. D. Jeyasingh, 2012, IEEE Transactions on Electron Devices.

Design and optimization methodology for 3D RRAM arrays

Shimeng Yu, Bing Chen, Jinfeng Kang, 2013, 2013 IEEE International Electron Devices Meeting.

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Shimeng Yu, Peng Huang, Jinfeng Kang, 2012, 2012 International Electron Devices Meeting.

Device and materials requirements for neuromorphic computing

Hon-Sum Philip Wong, Weier Wan, Bin Gao, 2019, Journal of Physics D: Applied Physics.

Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.

Shimeng Yu, Bing Chen, Peng Huang, 2014, ACS nano.

In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device

He Tian, Mohammad Ali Mohammad, Tian-Ling Ren, 2015, Advanced materials.

Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

C.-Y. Liao, G.-Y. Siang, Y.-C. Chou, 2019, Applied Physics Express.

Single-Tube Characterization Methodology for Experimental and Analytical Evaluation of Carbon Nanotube Synthesis

Hai Wei, Subhasish Mitra, Albert Lin, 2011 .

Write disturb analyses on half-selected cells of cross-point RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, 2014 IEEE International Reliability Physics Symposium.

Robust design and experimental demonstrations of carbon nanotube digital circuits

Hai Wei, H.-S. Philip Wong, Subhasish Mitra, 2014, Proceedings of the IEEE 2014 Custom Integrated Circuits Conference.

Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

Tuo-Hung Hou, Elisa Vianello, Hangbing Lv, 2017, Journal of Electroceramics.

Linear increases in carbon nanotube density through multiple transfer technique.

Hai Wei, Subhasish Mitra, Hong-Yu Chen, 2011, Nano letters.

Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

Hong-Yu Chen, Yang Chai, K. Takei, 2012, IEEE Transactions on Electron Devices.

Ultrafast Accelerated Retention Test Methodology for RRAM Using Micro Thermal Stage

H.-S. Philip Wong, Yoshio Nishi, Hong-Yu Chen, 2017, IEEE Electron Device Letters.

Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Shimeng Yu, Jinfeng Kang, Rui Liu, 2016, Nanotechnology.

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, 2014 IEEE 6th International Memory Workshop (IMW).

Impact of pulse rise time on programming of cross-point RRAM arrays

Shimeng Yu, Bing Chen, Peng Huang, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Experimental demonstration of a fully digital capacitive sensor interface built entirely using carbon-nanotube FETs

Georges G. E. Gielen, H.-S. Philip Wong, Subhasish Mitra, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

Carbon nanotube electronics - Materials, devices, circuits, design, modeling, and performance projection

Hai Wei, Jie Zhang, H.-S. Philip Wong, 2011, 2011 International Electron Devices Meeting.

Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

C.-Y. Liao, S. Gu, G.-Y. Siang, 2018, IEEE Journal of the Electron Devices Society.

Reliability of graphene interconnects and n-type doping of carbon nanotube transistors

H. Wong, S. Mitra, Hong-Yu Chen, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

H. Wong, Yezhou Yang, T. Ren, 2014, Nano letters.

3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines

Shimeng Yu, Peng Huang, Jinfeng Kang, 2015, IEEE Transactions on Electron Devices.

Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.

Shimeng Yu, H. Wong, Lifeng Liu, 2014, ACS nano.

Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture

Shimeng Yu, Bing Chen, H.-S. Philip Wong, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory

Shimeng Yu, Jinfeng Kang, Rui Liu, 2013, Nanotechnology.