I. Chambouleyron

发表

Determination of thickness and optical constants of amorphous silicon films from transmittance data

E. Birgin, M. Mulato, I. Chambouleyron, 2000 .

Optical constants of thin films by means of a pointwise constrained optimization approach

J. M. Martínez, M. Mulato, I. Chambouleyron, 1998 .

Estimation of the thickness and the optical parameters of several stacked thin films using optimization.

J. M. Martínez, E. Birgin, I. Chambouleyron, 2008, Applied optics.

Optimization techniques for the estimation of the thickness and the optical parameters of thin films using reflectance data

E. Birgin, I. Chambouleyron, J. M. Martínez, 2005 .

Franz-Keldysh effect and photovoltaic edge of PbSe IR detectors

I. Chambouleyron, 1976 .

Bond distribution and structure of amorphous germanium‐nitrogen alloys

I. Chambouleyron, A. Zanatta, 1996 .

Local electronegativity and chemical shift in Si and Ge based molecules and alloys

I. Chambouleyron, A. Zanatta, 1995 .

STUDY OF AMORPHOUS GERMANIUM-NITROGEN ALLOYS THROUGH X-RAY PHOTOELECTRON AND AUGER ELECTRON SPECTROSCOPIES

I. Chambouleyron, R. Landers, A. Zanatta, 1995 .

Properties of chemically sprayed SnO2 antireflecting films on Si solar cells

I. Chambouleyron, E. Saucedo, 1979 .

Estimation of the thickness and the optical parameters of several superimposed thin films using optimization

E. Birgin, I. Chambouleyron, R. Andrade, 2007 .

Photoelectronic properties of amorphous silicon nitride compounds

I. Chambouleyron, F. Alvarez, 1984 .

Short-pulse laser-induced crystallization of intrinsic and hydrogenated amorphous germanium thin films

G. Aichmayr, D. Toet, M. Mulato, 1997 .

Amorphous Silicon and Germanium

I. Chambouleyron, D. Comedi, G. Sujan, 2001 .

Photovoltaic effect in lead selenide p‐n junctions

I. Chambouleyron, M. Balkanski, J. Besson, 1973 .

Direct evidence of porosity in carbon-rich hydrogenated amorphous silicon carbide films

I. Chambouleyron, R. Buitrago, F. Alvarez, 1989 .

Aluminum-induced crystallization of hydrogenated amorphous germanium thin films

I. Chambouleyron, A. Zanatta, F. Fajardo, 2001 .

Epitaxial pulsed laser crystallization of amorphous germanium on GaAs

I. Chambouleyron, P. Santos, K. Ploog, 2001 .

Short-pulse laser crystallization and structuring of a-Ge

G. Aichmayr, D. Toet, M. Mulato, 1998 .

On the doping efficiency of nitrogen in hydrogenated amorphous germanium

I. Chambouleyron, A. Zanatta, 1993 .

Doping effects in off‐stoichiometric glow discharge amorphous silicon nitride

I. Chambouleyron, J. I. Cisneros, F. Alvarez, 1984 .

Conversion efficiency of multiple-gap solar cells under different irradiation conditions

I. Chambouleyron, F. Alvarez, 1985 .

INDIUM AND GALLIUM P-TYPE DOPING OF HYDROGENATED AMORPHOUS GERMANIUM THIN FILMS

I. Chambouleyron, D. Comedi, F. Fajardo, 1994 .

Photoconductivity of intrinsic and nitrogen‐doped hydrogenated amorphous germanium thin films

I. Chambouleyron, A. Zanatta, G. Marcano, 1994 .

Hydrogenated amorphous germanium and its alloys

I. Chambouleyron, 1993 .

Hydrogen content, transport properties and light degradation of a-Si: H films containing artificially generated interfaces

J. Andreu, I. Chambouleyron, P. Cabarrocas, 1988 .

Properties of a-Si:H/a-Si:H Interfaces Generated by Plasma Switching

J. Andreu, I. Chambouleyron, P. Cabarrocas, 1987 .

Band‐gap tailoring in amorphous germanium‐nitrogen compounds

I. Chambouleyron, 1985 .

Hydrogen diffusion in RF-sputtered a-Ge:H thin films

I. Chambouleyron, F. Freire, C. Graeff, 1991 .

The Perspectives of Hydrogenated Amorphous Germanium as an Electronic Material

Carlos Frederico de Oliveira Graeff, F. C. Marques, M. Mulato, 1995 .

Hydrogen and deuterium incorporation and release processes in r.f.-sputtered hydrogenated or deuterated amorphous germanium films

Carlos Frederico de Oliveira Graeff, I. Chambouleyron, F. Freire, 1993 .

Vibrational properties of amorphous Si-N and Ge-N alloys

F. C. Marques, R. Barrio, I. Chambouleyron, 1989 .

Mossbauer study of hydrogenated amorphous germanium-tin thin-film alloys

F. C. Marques, R. Barrio, I. Chambouleyron, 1989 .

Light-induced metastability in a-Ge" H

I. Chambouleyron, P. Santos, C. Graeff, 1991 .

Column III and V elements as substitutional dopants in hydrogenated amorphous germanium

I. Chambouleyron, D. Comedi, 1998 .

ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION

I. Chambouleyron, F. Evangelisti, M. Sebastiani, 1993 .

Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films

I. Chambouleyron, A. Zanatta, F. Ferri, 2006 .

Structural changes induced by nitrogen in the a-Ge:H network

I. Chambouleyron, D. Comedi, R. Campomanes, 1999 .

Small angle X-ray scattering and infrared spectroscopy study of sputtered a-Ge:H

M. Mulato, I. Chambouleyron, I. Torriani, 1993 .

Local coordination of Ga impurity in hydrogenated amorphous germanium studied by extended x-ray absorption fine-structure spectroscopy

I. Chambouleyron, D. Comedi, G. Dalba, 1999 .

Hydrogen bonding and void microstructure of a‐Ge:H films

M. Mulato, I. Chambouleyron, I. Torriani, 1996 .

XPS study of non‐stoichiometric amorphous GeN alloys (a‐GeNx, 0≤x≤0.3)

I. Chambouleyron, R. Landers, A. Zanatta, 2008 .

Optimum band gap for amorphous silicon based solar cells

P. Fiorini, I. Chambouleyron, F. Evangelisti, 1990, IEEE Conference on Photovoltaic Specialists.

Bismuth doping of hydrogenated amorphous germanium thin films

I. Chambouleyron, D. Comedi, F. Burmeister, 2006 .

Dopant impurity‐induced defects in p‐type doped hydrogenated amorphous germanium

I. Chambouleyron, D. Comedi, 1996 .

Optical constants and thickness determination of very thin amorphous semiconductor films

Ernesto G. Birgin, I. Chambouleyron, J. M. Martínez, 2006 .

Model of the electronic structure of amorphous germanium tin alloys

R. Barrio, I. Chambouleyron, J. Tagüeña-Martínez, 1990 .

Nitrogen in germanium

Antonio Ricardo Zanatta, I. Chambouleyron, I. Chambouleyron, 1998 .

STEADY-STATE PHOTOCONDUCTIVITY OF GALLIUM- AND INDIUM-DOPED HYDROGENATED AMORPHOUS GERMANIUM THIN FILMS

I. Chambouleyron, D. Comedi, F. T. Reis, 1998 .

Structural and optoelectronic properties of Ge‐rich hydrogenated amorphous silicon‐germanium alloys

Carlos Frederico de Oliveira Graeff, I. Chambouleyron, 1994 .

Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films

I. Chambouleyron, F. T. Reis, 2002 .

Temperature dependence of the photoconductivity of gallium-doped hydrogenated amorphous germanium films

I. Chambouleyron, D. Comedi, F. T. Reis, 2000 .

Band tails and defect density in p-type doped hydrogenated amorphous germanium

I. Chambouleyron, D. Comedi, F. Fajardo, 1996 .

ESTIMATION OF INDIUM-TO-GERMANIUM AND GALLIUM-TO-GERMANIUM SPUTTERING YIELD RATIOS USING COSPUTTERING DEPOSITION

I. Chambouleyron, M. Tabacniks, D. Comedi, 1994 .

Comparison of the Properties of Sputtered and Glow Discharge a-Ge:H Films

F. C. Marques, A. E. Wetsel, I. Chambouleyron, 1990 .

Exponential absorption edge and disorder in Column IV amorphous semiconductors

M. Mulato, I. Chambouleyron, A. Zanatta, 1998 .

Compact hydrogenated amorphous germanium films by ion-beam sputtering deposition

I. Chambouleyron, P. Mascher, D. Comedi, 2000 .

The Effect of Ion-Bombardment on the Formation of Voids During Deposition of a-Ge:H

I. Chambouleyron, D. Comedi, P. Hammer, 1998 .

Local order of Sb and Bi dopants in hydrogenated amorphous germanium thin films studied by extended x-ray absorption fine structure

I. Chambouleyron, F. Rocca, G. Dalba, 2002 .

Estimation of the Optical Constants and the Thickness of Thin Films Using Unconstrained Optimization

E. Birgin, I. Chambouleyron, J. Martínez, 1999 .

Reduction of Surface Recombination Velocity of Silicon Surfaces by SnOx Films

I. Chambouleyron, E. Saucedo, J. Montoya, 1979 .

A simple technology to improve crystalline-silicon solar cell efficiency

F. C. Marques, I. Chambouleyron, J. Urdanivia, 1998 .

Aluminium-induced nanocrystalline Ge formation at low temperatures

I. Chambouleyron, A. Zanatta, C. Ribeiro, 2007, Journal of physics. Condensed matter : an Institute of Physics journal.

Low-temperature Al-induced crystallization of amorphous Ge

I. Chambouleyron, A. Zanatta, 2005 .

Retrieval of optical constants and thickness of thin films from transmission spectra.

M. Mulato, I. Chambouleyron, A. Moretti, 1997, Applied optics.

On the influence of an external D.C. substrate bias on boron and phosphorus doping efficiencies in a-Si:H

A. Gobbi, I. Chambouleyron, F. Alvarez, 1985 .

Local order in hydrogenated amorphous germanium thin films studied by extended x-ray absorption fine-structure spectroscopy

Carlos Frederico de Oliveira Graeff, I. Chambouleyron, G. Dalba, 1997 .

Estimation of optical parameters of very thin films

Ernesto G. Birgin, I. Chambouleyron, José Mario Martínez, 2003 .

Optimization problems in the estimation of parameters of thin films and the elimination of the influence of the substrate

Ernesto G. Birgin, I. Chambouleyron, José Mario Martínez, 2003 .

Optical properties of dielectric and semiconductor thin films

I. Chambouleyron, J. Martínez, 2002 .

Estimation of the thickness and the optical parameters of several superimposed thin films using optimization

E. Birgin, I. Chambouleyron, R. Andrade, 2007 .

Estimation of the optical constants and the thickness of thin films using unconstrained optimization

E. Birgin, Ina Aust, J. Brandl, 2006 .

High-efficiency GaAsGa1−xAlxAs single-heterostructure light emitting diodes

I. Chambouleyron, A. Lastras-Martinez, 1979 .

Structural Properties of a-Ge 1−x n x :H Alloys

F. C. Marques, I. Chambouleyron, 1990 .

Small-angle X-ray and neutron scattering of polydisperse systems : determination of the scattering-particle-size distribution

I. Chambouleyron, M. Mulato, M. Mulato, 1996 .

Pulsed laser crystallization and structuring of a-Ge on GaAs

I. Chambouleyron, P. Santos, A. Trampert, 2002 .

Highly conductive and transparent amorphous tin oxide

I. Chambouleyron, D. Jousse, C. Constantino, 1983 .

Investigation of ion-bombardment effects on the formation of voids during deposition of a-Ge : H

I. Chambouleyron, P. Mascher, D. Comedi, 1999 .

Visible light emission from reverse biased amorphous silicon carbide P-I-N structures

I. Chambouleyron, H. Fragnito, F. Alvarez, 1987 .

Spin dependent photoconductivity in hydrogenated amorphous silicon germanium alloys

Carlos Frederico de Oliveira Graeff, M. Stutzmann, M. Brandt, 1993 .

Electroluminescence from amorphous silicon carbide heterojunctions under reverse biased conditions

I. Chambouleyron, H. Fragnito, F. Alvarez, 1988 .

Use of hydrogenation in the study of the properties of amorphous germanium tin alloys

F. C. Marques, I. Chambouleyron, 1989 .

Internal stress-induced changes of impurity coordination and doping mechanisms in a-Ge:H doped with column III metals

I. Chambouleyron, D. Comedi, F. Rocca, 2000 .

Optical properties of non-stoichiometric germanium nitride compounds (a-GeNx)

F. C. Marques, I. Chambouleyron, I. Pereyra, 1985 .

Study of structural changes in amorphous germanium–nitrogen alloys by optical techniques

I. Chambouleyron, P. Santos, A. Zanatta, 1996 .

Optical diffraction gratings produced by laser interference structuring of amorphous germanium–nitrogen alloys

D. Toet, M. Mulato, I. Chambouleyron, 2002 .

Estimation of the Optical Constants and the Thickness of Thin Films Using Unconstrained Optimization

E. Birgin, I. Chambouleyron, J. Martínez, 1999 .

Estimation of the Optical Constants and the Thickness of Thin Films Using Unconstrained Optimization

E. Birgin, I. Chambouleyron, J. Martínez, 1999 .

Multiple-gap amorphous solar cells reconsidered

I. Chambouleyron, 1984 .

Optical constants and thickness determination of very thin amorphous semiconductor films

E. Birgin, I. Chambouleyron, S. Ventura, 2002 .

Surface barrier SnO2/SiOx/c-Si (n) solar cells: optimization of the fabrication process

I. Chambouleyron, F. Marques, 1986 .

Annealing crystallization of a‐Ge/Al/Si and a‐Ge/Si thin films

I. Chambouleyron, A. Zanatta, F. Fajardo, 2005 .