X. Blasco

Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope

M. Porti, M. Nafría, W. Vandervorst, 2005 .

HIGH-K GATE STACKS ELECTRICAL CHARACTERIZATION AT THE NANOSCALE USING CONDUCTIVE-AFM

M. Porti, M. Nafría, L. Aguilera, 2006 .

Effect of N 2 anneal on thin HfO 2 layers studied by conductive atomic force microscopy

W. Vandervorst, X. Blasco, J. Pétry, 2004 .

Topographic characterization of AFM-grown SiO2 on si

Marc Porti, Xavier Aymerich, Montserrat Nafría, 2001 .

Nanoscale post-breakdown conduction of HfO/sub 2//SiO/sub 2/ MOS gate stacks studied by enhanced-CAFM

M. Nafria, W. Vandervorst, X. Blasco, 2005, IEEE Transactions on Electron Devices.

Enhanced electrical performance for conductive atomic force microscopy

Xavier Aymerich, Montserrat Nafría, X. Blasco, 2005 .

Electrical characterization and fabrication of SiO2 based metal–oxide–semiconductor nanoelectronic devices with atomic force microscopy

M. Porti, M. Nafría, X. Aymerich, 2003 .