U. Mishra

D. Clarke, U. Mishra, J. Speck, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Polarity inversion of N-face GaN using an aluminum oxide interlayer

U. Mishra, J. Speck, Feng Wu, 2010 .

Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

U. Mishra, R. Chung, J. Speck, 2011 .

Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2001 .

Bias-dependent performance of high-power AlGaN/GaN HEMTs

Y.-F. Wu, P. Parikh, M. Moore, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

S. Denbaars, C. Weisbuch, N. Fichtenbaum, 2007 .

HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures

R. Dimitrov, O. Ambacher, M. Stutzmann, 2001 .

Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2001 .

Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

S. Denbaars, P. Petroff, U. Mishra, 2000 .

n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION

U. Mishra, E. Hu, S. Estrada, 2004 .

n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550–750 °C

L. Coldren, S. Denbaars, H. Xing, 2003 .

Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding

Shuji Nakamura, Umesh K. Mishra, Akihiko Murai, 2006 .

Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding

S. Denbaars, S. Nakamura, U. Mishra, 2008 .

Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy

S. Denbaars, C. Walle, U. Mishra, 2008 .

Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications

S. Denbaars, L. McCarthy, U. Mishra, 2004 .

Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

U. Mishra, J. Speck, T. Mates, 2017 .

Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides

S. Denbaars, W. Yang, S. Keller, 1999 .

High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz

M. Urteaga, U. Mishra, K. Shinohara, 2017, 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Refractive index study of AlxGa1−xN films grown on sapphire substrates

S. Denbaars, A. Davydov, N. Sanford, 2003 .

Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors

Nidhi, S. Denbaars, U. Mishra, 2008 .

First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel

U. Mishra, S. Keller, C. Gupta, 2020, Semiconductor Science and Technology.

Annealing of C60o gamma radiation-induced damage in n-GaN Schottky barrier diodes

G. Umana-Membreno, S. Keller, U. Mishra, 2007 .

Atom probe tomography studies of Al2O3 gate dielectrics on GaN

U. Mishra, J. Speck, B. Mazumder, 2014 .

Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .

Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition

X. H. Wu, S. Denbaars, U. Mishra, 1996 .

Demonstration of ultra-small ( 0.2%) for mini-displays

Ryan T. Ley, S. Denbaars, S. Nakamura, 2021 .

Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Ryan T. Ley, S. Denbaars, S. Nakamura, 2020 .

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

S. Denbaars, S. Nakamura, U. Mishra, 2017 .

InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays

S. Denbaars, S. Nakamura, U. Mishra, 2015 .

Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices

J. Bowers, D. Friedman, U. Mishra, 2012 .

Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

S. Denbaars, S. Nakamura, S. Keller, 2007 .

Gate Breakdown in MESFET's and HEMT's

Robert J. Trew, Umesh K. Mishra, R. Trew, 1991 .

Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs

U. Mishra, S. Heikman, Y. Dora, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Reliability of AlGaN/GaN HEMTs; An overview of the results generatedunder the ONR DRIFT program

U. Mishra, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxy

S. Ringel, U. Mishra, J. Speck, 2007 .

S. Ringel, U. Mishra, J. Speck, 2004 .

Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition

S. Denbaars, S. Ringel, U. Mishra, 2003, 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767).

Deep levels in n-type Schottky and p+-n homojunction GaN diodes

S. Denbaars, S. Ringel, U. Mishra, 2000 .

Deep Levels in n-Type Schottky and p + -n Homojunction GaN Diodes

S. Denbaars, S. Ringel, U. Mishra, 1999 .

High speed devices

P. Asbeck, S. Mookerjea, D. Ritter, 2010, 68th Device Research Conference.

Reconfigurable optical properties in InGaN/GaN quantum wells

L. Coldren, S. Denbaars, J. Muth, 1997 .

Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells

S. Denbaars, U. Mishra, S. Keller, 1999 .

Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells

S. Denbaars, U. Mishra, S. Keller, 1998 .

Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire

S. Denbaars, U. Mishra, J. Speck, 1999 .

Analysis of in-situ etched and regrown {AlInAs}/{GaInAs} interfaces

L. Coldren, U. Mishra, T. Strand, 1997 .

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

S. Denbaars, S. Nakamura, U. Mishra, 2020 .

Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process

S. Denbaars, U. Mishra, J. Speck, 1999 .

AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n/sup +/ re-growth

S. Denbaars, U. Mishra, P. Kozodoy, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process

S. Denbaars, U. Mishra, J. Speck, 1998 .

MOVPE growth and characterization of Mg-doped GaN

S. Denbaars, S. Keller, U. Mishra, 1998 .

Magneto-transport studies in AlGaN/GaN MODFETs

U. Mishra, G. Parish, J. Dell, 1998, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).

Large area GaN HEMT power devices for power electronic applications: switching and temperature characteristics

David R. Clarke, Umesh K. Mishra, Naiqian Zhang, 2003, IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03..

Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

Larry A. Coldren, John E. Bowers, David R. Clarke, 1998 .

Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices

U. Mishra, S. Keller, A. Krishna, 2020, Semiconductor Science and Technology.

In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge

U. Mishra, S. Keller, Silvia H. Chan, 2014 .

Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition

S. Denbaars, U. Mishra, J. Speck, 2009 .

Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

S. Denbaars, U. Mishra, J. Speck, 2010 .

Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors

S. Denbaars, U. Mishra, J. Speck, 2009 .

High breakdown voltage p–n diodes on GaN on sapphire by MOCVD

U. Mishra, S. Keller, C. Gupta, 2016 .

Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs

S. Keller, U. Mishra, S. Heikman, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

GaN-Based RF Power Devices and Amplifiers

Umesh K. Mishra, Likun Shen, Thomas E. Kazior, 2008, Proceedings of the IEEE.

Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

U. Mishra, E. Ahmadi, I. Sayed, 2021, Applied Physics Letters.

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

K. Sun, U. Mishra, E. Ahmadi, 2021, APL Materials.

Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN

U. Mishra, J. Speck, S. Kaun, 2013 .

X-band power performance of N-face GaN MIS-HEMTs

U. Mishra, J. Speck, Hyeongnam Kim, 2011 .

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

F. Recht, L. McCarthy, U. Mishra, 2006, IEEE Electron Device Letters.

AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts

F. Recht, L. McCarthy, U. Mishra, 2007, 2007 65th Annual Device Research Conference.

Selective dry etching of GaN over AlGaN in BCl/sub 3//SF/sub 6/ mixtures

H. Xing, T. Palacios, L. McCarthy, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Distribution of donor states on etched surface of AlGaN/GaN heterostructures

C. Walle, U. Mishra, M. Miao, 2010 .

V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation

S. Denbaars, U. Mishra, R. Chu, 2008, IEEE Electron Device Letters.

Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN

U. Mishra, S. Keller, Jing Lu, 2014 .

pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption.

U. Mishra, G. Parish, B. Nener, 2020, Journal of colloid and interface science.

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

U. Mishra, S. Keller, E. Ahmadi, 2018 .

Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode

G. Umana-Membreno, U. Mishra, G. Parish, 2015, IEEE Sensors Journal.

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

T. Mimura, U. Mishra, S. Keller, 2009 .

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

S. Denbaars, S. Nakamura, N. Fichtenbaum, 2009 .

LiNbO3 thin film growth on (0001)-GaN

U. Mishra, J. Speck, R. York, 2005 .

Effects of Band Tail Absorption on AlGaN‐Based Ultraviolet Photodiodes

D. Pulfrey, U. Mishra, G. Parish, 2001 .

Effects of polarisation on solar-blind AlGaN UV photodiodes

D. Pulfrey, U. Mishra, G. Parish, 2000, COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices.

MOCVD growth and properties of thin Al/sub x/Ga/sub 1-x/N layers on GaN

S. Denbaars, U. Mishra, G. Parish, 1998, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).

Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN

N. Fichtenbaum, L. McCarthy, U. Mishra, 2007, IEEE Electron Device Letters.

Impact of CF 4 Plasma Treatment on GaN

N. Fichtenbaum, L. McCarthy, U. Mishra, 2007 .

GaN field emitter array diode with integrated anode

S. Denbaars, S. Keller, U. Mishra, 1998 .

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

Umesh K. Mishra, Steven P. DenBaars, Nikholas G. Toledo, 2008 .

Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells

S. Denbaars, S. Nakamura, U. Mishra, 2013 .

InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)

S. Denbaars, U. Mishra, S. Keller, 2012, Journal of Electronic Materials.

Integrated non-III-nitride/III-nitride tandem solar cell

S. Denbaars, A. Gossard, U. Mishra, 2011, 69th Device Research Conference.

Optimization of the p-GaN window layer for InGaN/GaN solar cells

S. Denbaars, U. Mishra, N. Toledo, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Optical and thermal properties of In12Ga88N/GaN solar cells

S. Denbaars, U. Mishra, M. Iza, 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

Suppression of Mg propagation into subsequent layers grown by MOCVD

U. Mishra, S. Keller, T. Mates, 2017 .

Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback

L. Coldren, S. Denbaars, U. Mishra, 2003 .

Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

S. Denbaars, S. Ringel, U. Mishra, 2006 .

The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality

April Brown, U. Mishra, M. Delaney, 1988 .

Anti Reflection (AR) Coating for Indium Gallium Nitride InGaN Solar Cells

S. Denbaars, M. Reed, U. Mishra, 2012 .

High power AlGaN/GaN HEMTs for microwave applications

S. Denbaars, S. Keller, U. Mishra, 1997 .

A C-band high-dynamic range GaN HEMT low-noise amplifier

A. Chini, R.A. York, U.K. Mishra, 2004, IEEE Microwave and Wireless Components Letters.

A new field-plated GaN HEMT structure with improved power and noise performance

U. Mishra, R. York, S. Keller, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

1200V GaN Switches on Sapphire Substrate

K. Imanishi, U. Mishra, P. Parikh, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

AlGaN-GaN HEMTs: material, device, circuit technology and applications

J. Palmour, U. Mishra, M. Moore, 2003, 2003 International Symposium on Compound Semiconductors.

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

U. Mishra, J. Speck, U. Singisetti, 2011 .

p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

U. Mishra, J. Speck, A. Chini, 2006, 2006 64th Device Research Conference.

Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTs

T. Palacios, U. Mishra, R. York, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$

U. Mishra, S. Keller, E. Ahmadi, 2018, IEEE Electron Device Letters.

Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material

U. Mishra, B. Swenson, R. Yeluri, 2012 .

A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

U. Mishra, R. York, V. Zomorrodian, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Modeling of CPW Based Passive Networks using Sonnet Simulations for High Efficiency Power Amplifier MMIC Design

U. Mishra, R. York, V. Zomorrodian, 2011 .

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

Nidhi, U. Mishra, J. Speck, 2011, IEEE Electron Device Letters.

High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

U. Mishra, R. York, Y. Pei, 2010, 2010 IEEE MTT-S International Microwave Symposium.

N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications

Nidhi, U. Mishra, J. Speck, 2010, IEEE Electron Device Letters.

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

Nidhi, S. Keller, U. Mishra, 2009, IEEE Electron Device Letters.

Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition

G. Umana-Membreno, N. Fichtenbaum, U. Mishra, 2008 .

Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime

U. Mishra, J. Speck, R. Chu, 2008 .

Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

S. Denbaars, F. Recht, N. Fichtenbaum, 2007 .

Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures

Nidhi, T. Palacios, U. Mishra, 2006, IEEE Electron Device Letters.

Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs

U. Mishra, J. Speck, A. Chini, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

GaN HEMTs: material, device, circuit technology and applications

J. Palmour, U. Mishra, M. Moore, 2004, International Meeting for Future of Electron Devices, 2004..

Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN

S. Denbaars, U. Mishra, J. Speck, 2009 .

Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures

S. Denbaars, U. Mishra, E. Hu, 2000 .

Linearity and gain characteristics of AlGaN/GaN HEMTs

U. Mishra, M. Moore, P. Parikh, 2002, Digest. International Electron Devices Meeting,.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

S. Denbaars, S. Nakamura, D. Feezell, 2011 .

Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

S. Denbaars, U. Mishra, N. Zhang, 2002 .

Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands

O. Ambacher, M. Stutzmann, U. Mishra, 2002 .

Proceedings 2000 IEEE/CornelI Conference on High Performance Devices

April S. Brown, Robert J. Trew, Lester F. Eastman, 2000 .

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Lester F. Eastman, Martin Eickhoff, James S. Speck, 2003 .

Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD

Moon J. Kim, S. Nakamura, U. Mishra, 2019, Journal of Electronic Materials.

Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

M. Kocan, G. Umana-Membreno, F. Recht, 2007 .

Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development

G. Umana-Membreno, U. Mishra, G. Parish, 2010, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices.

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

U. Mishra, J. Speck, R. Chu, 2010 .

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET

U. Mishra, S. Keller, C. Gupta, 2016, IEEE Electron Device Letters.

Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

U. Mishra, S. Keller, C. Gupta, 2020, IEEE Electron Device Letters.

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

U. Mishra, S. Keller, N. Hatui, 2020 .

Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

U. Mishra, S. Keller, N. Hatui, 2019, Applied Physics Letters.

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

U. Mishra, S. Keller, N. Hatui, 2019, physica status solidi (a).

Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs

U. Mishra, S. Keller, E. Ahmadi, 2020, IEEE Transactions on Electron Devices.

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Denbaars, S. Keller, U. Mishra, 2010 .

Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition

S. Denbaars, U. Mishra, J. Speck, 2008 .

Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress

S. Denbaars, U. Mishra, S. Keller, 2008 .

Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition

S. Denbaars, N. Fichtenbaum, S. Keller, 2007 .

Chapter 3 - Unipolar InP-Based Transistors

U. Mishra, M. Hashemi, 1994 .

Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate

U. Mishra, S. Keller, N. Hatui, 2022, Crystals.

Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition

S. Denbaars, U. Mishra, S. Keller, 2014 .

Linearity of high Al-content AlGaN/GaN HEMTs

U. Mishra, M. Moore, P. Parikh, 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).

Kilovolt AlGaN/GaN HEMTs as Switching Devices

Umesh K. Mishra, S. P. DenBaars, T. P. Ma, 2001 .

Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

S. Denbaars, U. Mishra, J. Speck, 2004 .

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures

S. Denbaars, U. Mishra, J. Speck, 2003 .

Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)

S. Denbaars, U. Mishra, E. Hu, 2003 .

Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

S. Denbaars, U. Mishra, S. Keller, 2001 .

Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN

S. Denbaars, S. Nakamura, U. Mishra, 2006 .

Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers

S. Denbaars, J. Bowers, U. Mishra, 1998 .

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

A. Uedono, S. Denbaars, S. Kamiyama, 2007 .

Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

S. Denbaars, S. Nakamura, S. Keller, 2006 .

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

H. Masui, S. Denbaars, S. Nakamura, 2010, IEEE Transactions on Electron Devices.

Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC

S. Denbaars, S. Keller, U. Mishra, 2003 .

Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

U. Mishra, J. Speck, Feng Wu, 2012 .

Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films

S. Denbaars, U. Mishra, J. Speck, 2005 .

Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates

S. Denbaars, C. Walle, U. Mishra, 2008 .

Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates

S. Denbaars, C. Walle, U. Mishra, 2008 .

Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy

Moon J. Kim, U. Mishra, S. Keller, 2017 .

1% efficiency Al/sub 0.3/Ga/sub 0.7/As planar-doped-barrier electron emitters

U. Mishra, W. Jiang, 1993 .

Commercialization of 600V GaN HEMTs

L. McCarthy, U. Mishra, K. Shono, 2014 .

Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering

S. Denbaars, T. Palacios, U. Mishra, 2005 .

Improvement in low energy ion‐induced damage with a low temperature GaAs capping layer

U. Mishra, J. Speck, E. Hu, 1996 .

GaN HEMTs grown on sapphire substrates for microwave power amplification

U. Mishra, R. York, S. Keller, 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).

Pressure Studies in InGaN/GaN Quantum Wells

S. Denbaars, C. Menoni, D. Patel, 2001 .

Tuning piezoelectric fields in InGaN/GaN quantum wells

S. Denbaars, C. Menoni, D. Patel, 2001, CLEO 2001.

Lateral oxide current aperture for InP-based vertical electron current flow devices: Demonstration using RTD's

U. Mishra, J. Yen, H. Blank, 1997, 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes

L. Coldren, S. Denbaars, U. Mishra, 1999 .

Strain relaxation in InGaAs lattice engineered substrates

S. Keller, U. Mishra, J. Speck, 2000 .

Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants

E. Hu, U. Mishra, J. Speck, 1998 .

Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance

S. Denbaars, T. Palacios, N. Fichtenbaum, 2007 .

Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs

T. Palacios, S. Keller, U. Mishra, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

U. Mishra, J. Speck, T. Mates, 2008 .

1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)

U. Mishra, S. Keller, C. Gupta, 2017, 2017 75th Annual Device Research Conference (DRC).

Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

U. Mishra, S. Keller, C. Gupta, 2016 .

A novel device design to lower the on-resistance in GaN trench MOSFETs

U. Mishra, S. Keller, C. Gupta, 2016, 2016 74th Annual Device Research Conference (DRC).

InGaAs/AlInAs HEMT technology for millimeter wave applications

April Brown, U. Mishra, A. Brown, 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking

U. Mishra, A. Chakraborty, L. Shen, 2007, IEEE Transactions on Electron Devices.

Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances

S. Denbaars, U. Mishra, L. Shen, 2006 .

Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition

U. Mishra, S. Keller, T. Mates, 2017 .

Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers

Umesh K. Mishra, Srabanti Chowdhury, Jing Lu, 2011 .

AlGaN/GaN HBTs using regrown emitter

S. Denbaars, H. Xing, L. McCarthy, 1999 .

Time-resolved photoluminescence of In x Ga 1 − x N / G a N multiple quantum well structures: Effect of Si doping in the barriers

S. Denbaars, Yia-Chung Chang, S. Keller, 2001 .

Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films

S. Denbaars, S. Nakamura, U. Mishra, 2007 .

Microstructural, pyroelectric and energy storage performance of rare earth doped Ba0.15 R0.70 Ca0.15 Zr0.1Ti0.9 O3 (R=Ce, La & Gd) lead-free ceramics

U. Mishra, K. Srikanth, Y. Modi, 2019, ADVANCES IN BASIC SCIENCE (ICABS 2019).

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

W. J. Moore, B. V. Shanabrook, S. Denbaars, 2002 .

Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs

U. Mishra, S. Keller, M. Meneghini, 2018, IEEE Electron Device Letters.

Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

U. Mishra, B. Swenson, 2009 .

High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers

S. Denbaars, U. Mishra, J. Speck, 1999 .

Space-charge-limited currents in nonstoichiometric GaAs

U. Mishra, J. Ibbetson, 1996 .

Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxy

A. Gossard, U. Mishra, R. Kolbas, 1992 .

Study of Transport Through Low-Temperature GaAs Surface Insulator Layers

A. Gossard, U. Mishra, J. Ibbetson, 1991 .

Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor

U. Mishra, S. Keller, Haoran Li, 2015 .

InP-based HEMTs: status and potential

Umesh K. Mishra, J. B. Shealy, U. Mishra, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells

S. Denbaars, S. Keller, U. Mishra, 1998 .

Low temperature limits to molecular beam epitaxy of GaAs

A. Gossard, R. Mirin, U. Mishra, 1994 .

Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator

A. Gossard, U. Mishra, J. Ibbetson, 1991 .

Hydrogenation of GaAs MISFETs with Al2O3 as the gate insulator

U. Mishra, E. Hu, P. Parikh, 1996 .

P–n junction diodes with polarization induced p-type graded InxGa1–xN layer

S. Nakamura, U. Mishra, S. Keller, 2017 .

Nonpolar a-plane p-type GaN and p-n Junction Diodes

S. Denbaars, H. Xing, S. Keller, 2004 .

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

S. Denbaars, D. Jena, H. Xing, 2002, cond-mat/0204487.

Effects of spontaneous and piezoelectric polarisation on the photoresponsivity Of Ga- and N-faced AlGaN UV photodiodes

D. Pulfrey, U. Mishra, G. Parish, 2001, Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557).

Dipole scattering in polarization induced III–V nitride two-dimensional electron gases

A. Gossard, D. Jena, U. Mishra, 2000, cond-mat/0004204.

Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz

Nidhi, U. Mishra, J. Speck, 2011, 69th Device Research Conference.

U. Mishra, J. Speck, S. Keller, 2011, 69th Device Research Conference.

Measurement of the hot electron mean free path and the momentum relaxation rate in GaN

U. Mishra, S. Keller, Haoran Li, 2014 .

Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors

U. Mishra, S. Keller, Jing Lu, 2013 .

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

H. Xing, T. Palacios, L. McCarthy, 2004 .

Oxide based compound semiconductor electronics

E. Hu, U. Mishra, J. Speck, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

U. Mishra, S. Keller, Aidan A. Taylor, 2021, Applied Physics Letters.

Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN

S. Denbaars, S. Nakamura, U. Mishra, 2020, Materials.

Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

U. Mishra, J. Speck, S. Keller, 2015 .

Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS

D. Grider, U. Mishra, J. Ibbetson, 1998 .

Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

S. Denbaars, S. Nakamura, S. Keller, 2009 .

Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate

S. Denbaars, U. Mishra, J. Speck, 2007 .

Solar‐Blind p‐GaN/i‐AlGaN/n‐AlGaN Ultraviolet Photodiodes on SiC Substrate

S. Denbaars, S. Keller, U. Mishra, 2001 .

Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

U. Mishra, J. Speck, S. Dasgupta, 2012 .

N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess

S. Denbaars, U. Mishra, S. Keller, 2011, 69th Device Research Conference.

N-polar GaN-based MIS-HEMTs for mixed signal applications

Nidhi, U. Mishra, J. Speck, 2010, 2010 IEEE MTT-S International Microwave Symposium.

Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures

U. Mishra, S. Keller, M. Meneghini, 2020, IEEE Electron Device Letters.

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

U. Mishra, J. Speck, S. Keller, 2019, Applied Physics Letters.

Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN

U. Mishra, S. Keller, C. Gupta, 2019, Applied Physics Express.

Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz

U. Mishra, S. Keller, E. Ahmadi, 2016 .

Explanation of anomalously high current gain observed in GaN based bipolar transistors

M. Rodwell, H. Xing, U. Mishra, 2003, IEEE Electron Device Letters.

High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage

S. Denbaars, H. Xing, L. McCarthy, 2000 .

Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades

U. Mishra, J. Speck, S. Keller, 2016 .

Strain relaxation of InGaAs by lateral oxidation of AlAs

U. Mishra, J. Speck, P. Chavarkar, 2000 .

Preparation of indium nitride micro- and nanostructures by ammonolysis of indium oxide

S. Denbaars, U. Mishra, S. Keller, 2004 .

The growth of N-face GaN by MOCVD: effect of Mg, Si, and In

S. Denbaars, S. Nakamura, D. Clarke, 2004 .

Electron mobility in graded AlGaN alloys

S. Denbaars, D. Jena, H. Xing, 2006 .

Maskless regrowth of GaN for trenched devices by MOCVD

U. Mishra, S. Keller, C. Gupta, 2017 .

Polarization induced three-dimensional hole gas in compositionally graded InxGa1−xN layer

S. Nakamura, U. Mishra, S. Keller, 2016 .

Power GaN-based Microwave Devices for Wireless Communications

J. Palmour, U. Mishra, N. Zhang, 2001 .

High current gain GaN bipolar junction transistors with regrown emitters

S. Denbaars, H. Xing, L. McCarthy, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

AlGaN/GaN heterojunction bipolar transistor

S. Denbaars, M. Rodwell, L. McCarthy, 1999, IEEE Electron Device Letters.

High speed and high power AlGaN/GaN MODFETs

S. Denbaars, U. Mishra, S. Keller, 1997, 1997 55th Annual Device Research Conference Digest.

Measured microwave power performance of AlGaN/GaN MODFET

Y.-F. Wu, S. Keller, S. Denbaars, 1996, IEEE Electron Device Letters.

AlGaN-GaN HEMTs and HBTs for microwave power

S. Denbaars, H. Xing, L. McCarthy, 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

S. Weinreb, J.C.M. Hwang, M. Pospieszalski, 1986, IEEE Transactions on Electron Devices.

Millimeter-wave low-noise high electron mobility transistors

K.H.G. Duh, J.C.M. Hwang, P.C. Chao, 1985, IEEE Electron Device Letters.

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

S. Keller, R. Cuerdo, F. Calle, 2009, IEEE Electron Device Letters.

Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

S. Keller, S. Heikman, S. Denbaars, 2005, IEEE Transactions on Electron Devices.

High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE

U. Mishra, J. Speck, S. Keller, 2009, 2009 Device Research Conference.

Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs

S. Denbaars, T. Palacios, S. Keller, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Power performance of microwave high-electron mobility transistors

J.C.M. Hwang, P.C. Chao, P. Chao, 1985, IEEE Electron Device Letters.

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

A. Touboul, peixiong zhao, R. Reed, 2008, IEEE Transactions on Nuclear Science.

Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)]

S. Denbaars, S. Keller, U. Mishra, 2002 .

Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

L. Faraone, R. Menozzi, R. Menozzi, 2008, IEEE Transactions on Device and Materials Reliability.

Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

G. Umana-Membreno, S. Keller, U. Mishra, 2007 .

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Chang Soo Suh, R. Chu, F. Recht, 2007, IEEE Electron Device Letters.

Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs

N. Fichtenbaum, U. Mishra, J. Speck, 2007, 2007 65th Annual Device Research Conference.

AlGaN/GaN current aperture vertical electron transistors

S. Heikman, S. Denbaars, U. Mishra, 2002, 60th DRC. Conference Digest Device Research Conference.

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

U. Mishra, S. Keller, C. Gupta, 2016 .

Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition

S. Denbaars, U. Mishra, S. Keller, 2003 .

Non-planar Selective Area Growth and Characterization of GaN and AlGaN

S. Denbaars, U. Mishra, S. Keller, 2003 .

Optimization of Annealing Process for Improved InGaN Solar Cell Performance

S. Keller, M. Wraback, S. Denbaars, 2013, Journal of Electronic Materials.

High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

S. Keller, N. Fichtenbaum, L. McCarthy, 2006, 2006 International Electron Devices Meeting.

MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications

Rongming Chu, S. Denbaars, U. Mishra, 2009, IEEE Electron Device Letters.

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

S. Kolluri, S. Keller, S. Denbaars, 2009, IEEE Electron Device Letters.

RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation

S. Denbaars, U. Mishra, S. Keller, 2011, IEEE Electron Device Letters.

A GaN differential oscillator with improved harmonic performance

Hongtao Xu, C. Sanabria, S. Heikman, 2005, IEEE Microwave and Wireless Components Letters.

Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films

U. Mishra, R. York, S. Keller, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

Hongtao Xu, C. Sanabria, M. Rodwell, 2006, IEEE Electron Device Letters.

Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

P. Waltereit, U. Mishra, J. Speck, 2004, IEEE Electron Device Letters.

Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment

F. Recht, U. Mishra, J. Speck, 2008 .

N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications

U. K. Mishra, Nidhi, J. S. Speck, 2011, IEEE Electron Device Letters.

Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors

U. Mishra, S. Keller, Nidhi Brown, 2010 .

N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LG product of 16.8 GHz-µm

Nidhi, U. Mishra, J. Speck, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

U. K. Mishra, S. Keller, S. Denbaars, 2000 .

Growth of high purity N-polar (In,Ga)N films

S. Denbaars, S. Nakamura, U. Mishra, 2017 .

Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition

S. Denbaars, S. Keller, U. Mishra, 2003 .

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

S. Kolluri, S. P. DenBaars, U. K. Mishra, 2012, IEEE Electron Device Letters.

Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

Umesh K. Mishra, S. Keller, Steven P. DenBaars, 2001 .

Selective Area Mass Transport Regrowth of Gallium Nitride

S. Denbaars, U. Mishra, S. Heikman, 2001 .

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

S. Denbaars, S. Nakamura, U. Mishra, 2020 .

Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN

S. Denbaars, Dillon Acker-James, S. Nakamura, 2019, Semiconductor Science and Technology.

GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges

K. Imanishi, L. McCarthy, U. Mishra, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applications

U. Mishra, J. Champlain, C. Zheng, 2002, 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002..

Growth of N-polar GaN by ammonia molecular beam epitaxy

U. Mishra, J. Speck, S. Keller, 2018 .

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

U. K. Mishra, J. A. del Alamo, Jungwoo Joh, 2012, IEEE Transactions on Electron Devices.

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$

James S. Speck, Umesh K. Mishra, Uttam Singisetti, 2012 .

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

U. Mishra, J. Speck, U. Singisetti, 2011, 69th Device Research Conference.

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

S. Denbaars, S. Nakamura, U. Mishra, 2019, Applied Physics Letters.

Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity

Youli Li, S. Keller, U. Mishra, 2014 .

Gallium nitride based transistors

Daniel S. Green, Umesh K. Mishra, S. P. DenBaars, 2001 .

Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers

U. Mishra, Jing Lu, S. Chowdhury, 2011 .

Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor

L. Coldren, S. Denbaars, H. Xing, 2003 .

Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors

S. Denbaars, M. Rodwell, L. McCarthy, 2002 .

Electron transport and intrinsic mobility limits in two-dimensional electron gases of III-V nitride heterostructures

A. Gossard, D. Jena, U. Mishra, 2001, cond-mat/0103461.

HBT on LEO GaN

S. Denbaars, M. Rodwell, H. Xing, 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

60Co gamma-irradiation-induced defects in MOCVD n-GaN

Umesh K. Mishra, Lorenzo Faraone, Giacinta Parish, 2001, SPIE Micro + Nano Materials, Devices, and Applications.

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

Umesh K. Mishra, Matteo Meneghini, Davide Bisi, 2017 .

Quantum and classical scattering times due to charged dislocations in an impure electron gas

D. Jena, U. Mishra, 2002, cond-mat/0209663.

High electron mobility transistors

U. Mishra, P. Chavarkar, 2003 .

Manufacturing study of yield and performance dependence on gate length of submicron AlInAs-GaInAs HEMTs

U. Mishra, L. Larson, A. Schmitz, 1993 .

High T c YBa 2 Cu 3 O 7−x Thin Films on GaAs-Based Substrate Using MgO Buffer Layers with Sb Passivation Technique 1

U. Mishra, E. Hu, W. Jiang, 1992 .

Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor

S. Denbaars, U. Mishra, B. Schwenzer, 2005 .

Status and promise of InP electronics

U. Mishra, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Characteristics of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT's with n-and p-channel doping

K. W. Kim, U. Mishra, M. Littlejohn, 1993 .

Materials, Device and Circuit Properties of AlInAs-GaInAs HEMTs

U. Mishra, A. Brown, 1991 .

IIA-3 cryogenic noise performance of quarter-micrometer gate-length high-electron-mobility transistors

J.C.M. Hwang, P.C. Chao, M. Pospieszalski, 1985, IEEE Transactions on Electron Devices.

Depletion mode Al/sub 2/O/sub 3//GaAs MOSFETs with high current density

U. Mishra, P. Parikh, P. Chavarkar, 1997, 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

GaAs on insulator (GOI) for low power applications

U. Mishra, P. Parikh, P. Chavarkar, 1997, 1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings.

Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation

A. Gossard, U. Mishra, N. Nguyen, 1993 .

Encapsulated GaAs power MESFET

U. Mishra, N. Nguyen, J. Yen, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE

U. Mishra, R. Kolbas, 1991 .

Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

S. Denbaars, U. Mishra, S. Keller, 2022, Applied Physics Letters.

The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs

U. Mishra, S. Rosenbaum, A. Brown, 1989 .

Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states

S. Denbaars, Chi‐Kuang Sun, U. Mishra, 2001 .

Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k

S. Denbaars, S. Keller, U. Mishra, 1998 .

Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors

S. Denbaars, S. Nakamura, U. Mishra, 2019, Semiconductor Science and Technology.

Ultrafast electron dynamics study of GaN

S. Denbaars, Chi‐Kuang Sun, S. Keller, 1999 .

Flow modulation epitaxy of indium gallium nitride

S. Denbaars, U. Mishra, S. Keller, 1997 .

Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy

U. Mishra, J. Speck, Feng Wu, 2009 .

Large near resonance third order nonlinearity in GaN

S. Denbaars, Chi‐Kuang Sun, U. Mishra, 2000 .

Growth and characteristics of Fe-doped GaN

Umesh K. Mishra, S. P. DenBaars, Sarah L. Keller, 2003 .

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

Jaime A. Freitas, James S. Speck, Umesh K. Mishra, 2001 .

Triangular pattern formation on silicon through self-organization of gan nanoparticles

S. Denbaars, U. Mishra, B. Schwenzer, 2007 .

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

James S. Speck, Xinru Wu, Umesh K. Mishra, 1998 .

Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN

S. Denbaars, S. Ringel, U. Mishra, 2001 .

Measurement of second order susceptibilities of GaN and AlGaN

S. S. Park, S. Denbaars, A. Davydov, 2005 .

Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases

D. Jena, U. Mishra, 2002 .

High-power AlGaN/GaN HEMTs for Ka-band applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE Electron Device Letters.

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

John F. Muth, H. C. Casey, Umesh K. Mishra, 1997 .

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

Martin Kuball, U. Mishra, M. Ťapajna, 2010, IEEE Electron Device Letters.

Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, Umesh K. Mishra, Siddharth Rajan, 2013 .

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

Feng Gao, U. K. Mishra, Di Chen, 2012, IEEE Electron Device Letters.

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

U. K. Mishra, J. S. Speck, N. Killat, 2012 .

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

Umesh K. Mishra, Mustapha Faqir, Martin Kuball, 2011, Microelectron. Reliab..

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

U. Mishra, T. Merz, L. Brillson, 2010 .

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Steven A. Ringel, James S. Speck, Daniel S. Green, 2005 .

60Co gamma-irradiation-induced defects in n-GaN

L. Faraone, Umesh K. Mishra, John Dell, 2002 .

Hydrogen passivation of deep levels in n–GaN

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2000 .

N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz

U. Mishra, S. Keller, E. Ahmadi, 2016, 2016 74th Annual Device Research Conference (DRC).

Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016 .

Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices

S. Denbaars, U. Mishra, S. Keller, 2016 .

Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

U. Mishra, J. Speck, Xiaofeng Liu, 2013 .

A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency

U. Mishra, J. Speck, S. Keller, 2013 .

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2011 .

Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface

Umesh K. Mishra, Ying-Lan Chang, Evelyn L. Hu, 1997 .

Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

U. Mishra, J. Speck, B. Mazumder, 2012 .

Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

U. Mishra, J. Speck, S. Keller, 2013 .

Solar-blind AlGaN-based inverted heterostructure photodiodes

Umesh K. Mishra, Bernd Keller, Giacinta Parish, 2000 .

Novel devices based on the combination of nitride and II–VI materials

Detlef Hommel, Umesh K. Mishra, S. P. DenBaars, 2006 .

pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption.

U. Mishra, G. Parish, B. Nener, 2019, Journal of colloid and interface science.

Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane

S. Denbaars, U. Mishra, S. Keller, 2017 .

Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II: Two-dimensional effects in oxide-isolated structures

U. Mishra, J. Simmons, L. Faraone, 1982 .

Determination of the switching criterion for metal/tunnel-oxide/N/P+silicon switching devices

U. Mishra, J. Simmons, L. Faraone, 1981, IEEE Electron Device Letters.

Neutron irradiation effects on metal-gallium nitride contacts

U. Mishra, L. Brillson, J. Qiu, 2014 .

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

Moon J. Kim, S. Denbaars, S. Nakamura, 2018 .

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

S. Denbaars, U. Mishra, J. Speck, 2010 .

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1995 .

Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

U. Mishra, J. Speck, S. Keller, 2017 .

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2004 .

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2000 .

Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

Spiral Growth of InGaN Nanoscale Islands on GaN

S. Denbaars, U. Mishra, S. Keller, 1998 .

High breakdown GaN HEMT with overlapping gate structure

S. Keller, S. Heikman, S. Denbaars, 2000, IEEE Electron Device Letters.

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Umesh K. Mishra, S. P. DenBaars, Sarah L. Keller, 2008 .

Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride

Umesh K. Mishra, Chi-Kuang Sun, Stacia Keller, 2000 .

Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques

A. Uedono, S. Denbaars, S. Nakamura, 2004 .

Spin coherence and dephasing in GaN

Umesh K. Mishra, Bernd Beschoten, Evelyn L. Hu, 2001 .

Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays

Ryan T. Ley, S. Denbaars, S. Nakamura, 2020, Applied Physics Express.

Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

John E. Bowers, James S. Speck, Umesh K. Mishra, 1999 .

Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells

S. Denbaars, C. Weisbuch, N. Fichtenbaum, 2006 .

Growth and properties of InGaN nanoscale islands on GaN

S. Denbaars, J. Bowers, U. Mishra, 1998 .

Accurate mobility and carrier concentration analysis for GaN

S. Denbaars, D. Look, J. Sizelove, 1997 .

Optical properties of InGaN quantum wells

L. Coldren, S. Denbaars, J. Bowers, 1999 .

Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges

Nathan C. Palmquist, S. Denbaars, S. Nakamura, 2023, AIP Advances.

High conductivity modulation doped AlGaN/GaN multiple channel heterostructures

S. Denbaars, U. Mishra, S. Keller, 2003 .

Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE

K. Sun, U. Mishra, S. Keller, 2022, Journal of Applied Physics.

Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures

O. Ambacher, M. Eickhoff, U. Mishra, 2002 .

Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress

U. K. Mishra, G. A. Umana-Membreno, S. Keller, 2011, IEEE Transactions on Electron Devices.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Moon J. Kim, S. Denbaars, S. Nakamura, 2017 .

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2008 .

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

U. K. Mishra, J. S. Speck, S. Keller, 1995 .

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

Umesh K. Mishra, Stacia Keller, Steven P. DenBaars, 2002 .

Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

U. Mishra, Y. Pei, M. Higashiwaki, 2011, IEEE Transactions on Electron Devices.

AlGaN/GaN High Electron Mobility Transistors

Umesh K. Mishra, Tomas Palacios, T. Palacios, 2007 .

Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

Umesh K. Mishra, Masataka Higashiwaki, Srabanti Chowdhury, 2010 .

High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

Umesh K. Mishra, Evelyn L. Hu, R. Vetury, 1998 .

Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films

U. Mishra, S. Keller, N. Hatui, 2021, Electronics.

Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN

James S. Speck, Robert A. York, Umesh K. Mishra, 2005 .

CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 3202 Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study

Robert A Norwood, Stephen M. Emo, Karl Leo, 1998 .

High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

Umesh K. Mishra, P. Kozodoy, Giacinta Parish, 1999 .

Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

James S. Speck, Umesh K. Mishra, Elaheh Ahmadi, 2017 .

Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors

M. Kocan, G. Umana-Membreno, F. Recht, 2011 .

Proton-induced damage in gallium nitride-based Schottky diodes

peixiong zhao, D. Fleetwood, R. Weller, 2005, IEEE Transactions on Nuclear Science.

Proton-Induced Damage in Gallium Nitride-Based

peixiong zhao, D. Fleetwood, R. Weller, 2005 .

Current instabilities in GaN-based devices

C. Gaquiere, E. Kohn, A. Vescan, 2001, IEEE Electron Device Letters.

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

S. Denbaars, U. Mishra, M. Laurent, 2016 .

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Umesh K. Mishra, Srabanti Chowdhury, Man Hoi Wong, 2013 .

High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2011 .

Coupling of InGaN quantum-well photoluminescence to silver surface plasmons

Eli Yablonovitch, Umesh K. Mishra, S. P. DenBaars, 1999 .

Mercury(II) selective sensors based on AlGaN/GaN transistors.

N. Akhavan, G. Umana-Membreno, U. Mishra, 2016, Analytica chimica acta.

AlGaN/GaN-based biosensor for label-free detection of biological activity

U. Mishra, G. Parish, B. Nener, 2013 .

ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES

Umesh K. Mishra, Peter Kozodoy, Steven P. DenBaars, 1999 .

Short-Circuit Capability Demonstrated for GaN Power Switches

U. Mishra, YiFeng Wu, P. Parikh, 2021, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2006 .

Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica

S. Denbaars, U. Mishra, J. Speck, 2012 .

MOCVD growth of AlGaN films for solar blind photodetectors

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2004 .

Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films

James S. Speck, Umesh K. Mishra, Patrick Waltereit, 2003 .

Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition

S. Denbaars, S. Keller, U. Mishra, 2001 .

Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure

S. Denbaars, P. Petroff, S. Keller, 2000 .

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Christiane Poblenz, James S. Speck, William C. Mitchel, 2000 .

Channeling as a mechanism for dry etch damage in GaN

L. Coldren, S. Denbaars, U. Mishra, 2000 .

High internal and external quantum efficiency InGaN/GaN solar cells

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2011 .

Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2011 .

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

James S. Speck, Umesh K. Mishra, Elison Matioli, 2011 .

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2002 .

Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2000 .

AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE

U. Mishra, L. Larson, S. Rosenbaum, 1989, IEEE Electron Device Letters.

Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode

L. Eastman, W. Schaff, U. Mishra, 1984 .

The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor

M. Saraniti, U. Mishra, S. Chowdhury, 2015, IEEE Electron Device Letters.

Growth and characterization of bulk InGaN films and quantum wells

Larry A. Coldren, Umesh K. Mishra, Bernd Keller, 1996 .

Depletion region effects in Mg-doped GaN

Umesh K. Mishra, Peter Kozodoy, Steven P. DenBaars, 2000 .

Planar cold cathodes

U. Mishra, Wei-Nan Jiang, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation

D. S. Kamber, A. Uedono, S. Denbaars, 2009 .

Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2004 .

Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures

U. Mishra, S. Keller, F. Tuomisto, 2020 .

High quality AlN grown on SiC by metal organic chemical vapor deposition

Shuji Nakamura, Umesh K. Mishra, S. P. DenBaars, 2008 .

Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction

James S. Speck, Umesh K. Mishra, James Ibbetson, 2000 .

Flow modulation epitaxy of GaxIn1-xAs/AlAs heterostructures on InP for resonant tunneling diodes

S. Denbaars, A. Holmes, U. Mishra, 1994 .

Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors

S. Denbaars, S. Keller, U. Mishra, 2001 .

First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain

U. Mishra, S. Keller, E. Ahmadi, 2019, Japanese Journal of Applied Physics.

A scanning tunneling microscopy study of low-temperature grown GaAs

W. H. Weinberg, A. Gossard, P. Petroff, 1993 .

GaN HBT: toward an RF device

Mark J. W. Rodwell, James S. Speck, David L. Pulfrey, 2001 .

Ultra-high speed AlInAs-GaInAs HEMT technology

R. S. Beaubien, U. Mishra, L. Jelloian, 1987, 1987 International Electron Devices Meeting.

N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization

S. Denbaars, U. Mishra, S. Keller, 2023, Crystals.

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

Umesh K. Mishra, Brian Romanczyk, Stacia Keller, 2018, IEEE Transactions on Electron Devices.

Polarization engineered 1-dimensional electron gas arrays

U. Mishra, S. Keller, S. Rajan, 2012 .

Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure

S. Denbaars, U. Mishra, S. Keller, 2010, 1009.2537.

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Steven A. Ringel, Umesh K. Mishra, S. P. DenBaars, 2013 .

Next generation defect characterization in nitride HEMTs

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2011 .

Heavy doping effects in Mg-doped GaN

S. Denbaars, H. Xing, U. Mishra, 2000 .

Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates

G. Umana-Membreno, S. Keller, U. Mishra, 2011 .

Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

G. Umana-Membreno, S. Keller, U. Mishra, 2011 .

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

S. Denbaars, U. Mishra, S. Keller, 2010 .

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

James S. Speck, Umesh K. Mishra, Nidhi, 2009 .

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Rongming Chu, S. Keller, Man Hoi Wong, 2008, IEEE Electron Device Letters.

Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2005 .

Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2006 .

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Impact of Point Defects on the Luminescence Properties of (Al,Ga)N

A. Uedono, S. Denbaars, S. Nakamura, 2008 .

Effect of ohmic contacts on buffer leakage of GaN transistors

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

Cleaved and etched facet nitride laser diodes

L. Coldren, S. Denbaars, J. Bowers, 1998 .

Barrier height fluctuations in InGaN polarization dipole diodes

U. Mishra, S. Keller, Haoran Li, 2015 .

Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates

S. Denbaars, U. Mishra, J. Speck, 2005 .

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

P. Burke, U. Mishra, J. Speck, 2012 .

GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current

U. Mishra, R. Hamwey, S. Keller, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

S. Denbaars, U. Mishra, S. Keller, 2016 .

Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers

S. Denbaars, U. Mishra, S. Keller, 2014 .

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

S. Denbaars, T. Palacios, N. Fichtenbaum, 2006, IEEE Electron Device Letters.

AlGaN/AlN/GaN high-power microwave HEMT

R. Coffie, S. Keller, D. Buttari, 2001, IEEE Electron Device Letters.

Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

S. Denbaars, S. Keller, U. Mishra, 1999 .

Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films

U. Mishra, S. Keller, M. Laurent, 2018, physica status solidi (a).

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

W. J. Moore, B. V. Shanabrook, S. Denbaars, 2002 .

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Daniel S. Green, Umesh K. Mishra, Peter Kozodoy, 2003 .

High linearity GaN HEMT power amplifier with pre-linearization gate diode

V. Paidi, A. Chini, Likun Shen, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

GaN-Based FETs for Microwave Power Amplification

Brian Thibeault, Umesh K. Mishra, Bernd Keller, 1999 .

Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices

M. Kocan, G. Umana-Membreno, U. Mishra, 2010 .

Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

U. Mishra, Jing Lu, R. Yeluri, 2012, Journal of Electronic Materials.

Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

Umesh K. Mishra, Evelyn L. Hu, Stacia Keller, 1999 .

Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2003 .

Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD

U. Mishra, S. Keller, Silvia H. Chan, 2020, Applied Physics Express.

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Umesh K. Mishra, Stacia Keller, Steven P. DenBaars, 2009 .

Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an In x Ga 1 − x N / GaN double heterostructure

J. B. Lam, S. Denbaars, Yia-Chung Chang, 2001 .

Proceedings of low temperature (LT) GaAs and related materials

U. Mishra, E. Weber, G. Witt, 1992 .

Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe

S. Denbaars, J. Bowers, U. Mishra, 2000 .

Improvement of GaN-based laser diode facets by FIB polishing

Larry A. Coldren, James S. Speck, Umesh K. Mishra, 1998 .

GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

P. Burke, U. Mishra, J. Speck, 2014 .

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

James S. Speck, Umesh K. Mishra, Nidhi, 2010 .

Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors

T. Fisher, U. Mishra, G. Parish, 2000 .

N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax

U. Mishra, S. Keller, E. Ahmadi, 2012, 70th Device Research Conference.

N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

U. K. Mishra, S. Keller, E. Ahmadi, 2013, 71st Device Research Conference.

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz

Nidhi, U. Mishra, J. Speck, 2012, IEEE Electron Device Letters.

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

U. Mishra, S. Keller, Jing Lu, 2012, IEEE Electron Device Letters.

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Umesh K. Mishra, Martin Kuball, Michael J. Uren, 2012 .

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

James S. Speck, Umesh K. Mishra, Sarah L. Keller, 2000 .

Surface Potential at as‐Grown GaN(0001) MBE Layers

Umesh K. Mishra, Sarah L. Keller, Angela Rizzi, 2002 .

GAIN SPECTROSCOPY ON INGAN/GAN QUANTUM WELL DIODES

Larry A. Coldren, Yoon-Kyu Song, Umesh K. Mishra, 1997 .

Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

S. Denbaars, S. Nakamura, U. Mishra, 2013 .

InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices

Umesh K. Mishra, Nikholas G. Toledo, U. Mishra, 2012 .

Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures

O. Ambacher, M. Stutzmann, U. Mishra, 2001 .

Study of deleterious aging effects in GaN/AlGaN heterostructures

R. Dupuis, U. Mishra, J. Speck, 2003 .

Two-photon absorption study of GaN

Fu-Jen Kao, Umesh K. Mishra, M. P. Mack, 2000 .

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Umesh K. Mishra, Alessandro Chini, Tomas Palacios, 2003 .

Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells

S. Denbaars, C. Menoni, D. Patel, 2001 .

Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells

S. Denbaars, S. Nakamura, U. Mishra, 2011 .

Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures

S. Denbaars, S. Keller, U. Mishra, 1997 .

Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

U. Mishra, J. Speck, S. Kaun, 2012 .

Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

U. Mishra, N. Toledo, Jing Lu, 2013, IEEE Electron Device Letters.

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2002 .

Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)

S. Denbaars, S. Nakamura, U. Mishra, 2008 .

Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator

Shreepad Karmalkar, Umesh K. Mishra, U. Mishra, 2001 .

Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

S. Denbaars, U. Mishra, G. Parish, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Gate breakdown in MESFETs and HEMTs

R. Trew, U. Mishra, U.K. Mishra, 1991, IEEE Electron Device Letters.

Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

S. Denbaars, S. Keller, U. Mishra, 1998 .

Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

R. Trew, U. Mishra, R. Kolbas, 1990, IEEE Electron Device Letters.

Elucidation of the correlation between atomic-level defects in GaN nanoparticles and photoluminescence properties by NMR, XRD and TEM

U. Mishra, B. Schwenzer, Jerry G. Hu, 2006 .

Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

U. Mishra, M. Miao, M. Higashiwaki, 2010 .

Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

U. Mishra, U. Singisetti, M. Wong, 2012 .

Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition

Dillon Acker-James, U. Mishra, S. Keller, 2020, Semiconductor Science and Technology.

Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well

S. Denbaars, H. Craighead, S. Keller, 1999 .

SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

U. Mishra, S. Keller, R. Kudrawiec, 2020, Scientific Reports.

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

U. Mishra, S. Keller, E. Ahmadi, 2021, Applied Physics Letters.

Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs

S. Denbaars, F. Recht, N. Fichtenbaum, 2008 .

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

A. Chini, D. Buttari, S. Heikman, 2006, IEEE Transactions on Electron Devices.

Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise

Rohit R. Karnaty, J. Buckwalter, U. Mishra, 2022, 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Rohit R. Karnaty, J. Buckwalter, U. Mishra, 2020, IEEE Electron Device Letters.

N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz

Umesh K. Mishra, Brian Romanczyk, Stacia Keller, 2016, IEEE Electron Device Letters.

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Umesh K. Mishra, Chirag Gupta, Dong Ji, 2018, IEEE Electron Device Letters.

Ultra-high speed modulation-doped field-effect transistors: a tutorial review

Lawrence E. Larson, U. K. Mishra, Loi D. Nguyen, 1992, Proc. IEEE.

Group-III nitride nanoparticles - synthesis and photoluminescence studies

S. Denbaars, U. Mishra, F. Lange, 2003, 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003..

GaN microwave electronics

Y.-F. Wu, S. Keller, S. Denbaars, 1997, 1997 Topical Symposium on Millimeter Waves. Proceedings (Cat. No.97TH8274).

Phase noise in externally injection-locked oscillator arrays

Robert A. York, Xudong Cao, Umesh K. Mishra, 1997 .

Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes.

Tarun M. Sanders, G. Umana-Membreno, U. Mishra, 2017, Analytica chimica acta.

Semiconductor Device Physics and Design

Jasprit Singh, Umesh K. Mishra, U. Mishra, 2007 .

Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2006 .

Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

S. Denbaars, U. Mishra, S. Keller, 2000 .

Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films

S. Denbaars, S. Keller, U. Mishra, 1995 .

Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD

S. Denbaars, S. Keller, U. Mishra, 1995, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

N‐face high electron mobility transistors with a GaN‐spacer

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

Direct water photoelectrolysis with patterned n-GaN

Shuji Nakamura, Umesh K. Mishra, Daniel A. Cohen, 2007 .

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates

K. Sun, U. Mishra, E. Ahmadi, 2022, Applied Physics Letters.

Dislocation scattering in a two-dimensional electron gas

A. Gossard, D. Jena, U. Mishra, 2000, cond-mat/0003199.

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2008 .

Epitaxially-grown GaN junction field effect transistors

C. G. Willison, S. Denbaars, J. Zolper, 2000 .

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

U. Mishra, S. Chowdhury, U.K. Mishra, 2008, IEEE Electron Device Letters.

25GHz Static Frequency Dividers in AlInAs-GalnAs HEMT Technology

U. K. Mishra, L. M. Jelloian, M. A. Thompson, 1988, 1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

MBE Grown GaAs MESFETs with ultra-high gmand fT

R. S. Beaubien, U. Mishra, A. Brown, 1986, 1986 International Electron Devices Meeting.

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

S. Denbaars, U. Mishra, J. Speck, 2017 .

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

U. Mishra, J. Speck, B. Mazumder, 2015 .

Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer

U. Mishra, S. Chowdhury, M. Wong, 2010, 68th Device Research Conference.

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2006 .

Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy

U. Mishra, J. Speck, S. Keller, 2020 .

N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

Umesh K. Mishra, Brian Romanczyk, Stacia Keller, 2017, IEEE Electron Device Letters.

Progress in gallium nitride-based bipolar transistors

S. Denbaars, H. Xing, L. McCarthy, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

Commercialization and reliability of 600 V GaN power switches

Peter Smith, Kurt Smith, Umesh K. Mishra, 2015, 2015 IEEE International Reliability Physics Symposium.

Chapter 3 – Field Effect Transistors: FETs and HEMTs

Umesh K. Mishra, P. Chavarkar, U. Mishra, 2000 .

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

U. Mishra, S. Keller, S. Heikman, 2002, IEEE Electron Device Letters.

REDUCED THERMAL CONDUCTIVITY IN LOW-TEMPERATURE-GROWN GAAS

Arthur C. Gossard, Umesh K. Mishra, James Ibbetson, 1999 .

Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors

Mark J. W. Rodwell, James S. Speck, Umesh K. Mishra, 2001 .

GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design

S. Denbaars, S. Keller, U. Mishra, 2002 .

A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

Robert A. York, Umesh K. Mishra, Giacinta Parish, 2000 .

High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

Y.-F. Wu, P. Parikh, J. Ibbetson, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC

S. Denbaars, N. Fichtenbaum, U. Mishra, 2006 .

GaN-Based RF Power Devices and Amplifiers Gallium nitride power transistors can operate at millimeter wave and beyond to meet future needs of cell phones, satellites, and TV broadcasting.

Umesh K. Mishra, Likun Shen, Yifeng Wu, 2008 .

Electron Transport in III–V Nitride Two‐Dimensional Electron Gases

A. Gossard, D. Jena, U. Mishra, 2001 .

Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing

James S. Speck, Umesh K. Mishra, Patrick Waltereit, 2004 .

Lateral GaN Devices for Power Applications (from kHz to GHz)

Umesh K. Mishra, Matthew Guidry, U. Mishra, 2017 .

W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz

U. Mishra, S. Keller, E. Ahmadi, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

V-Gate GaN HEMTs for X-Band Power Applications

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Capacitance-voltage profiling on polar III-nitride heterostructures

H. Kroemer, U. Mishra, J. Speck, 2012 .

Characterization of an AlGaN/GaN two-dimensional electron gas structure

S. Denbaars, P. Petroff, S. Keller, 2000 .

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

S. Denbaars, P. Petroff, U. Mishra, 1999 .

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

Umesh K. Mishra, Chirag Gupta, Dong Ji, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

/sup 60/Co gamma irradiation effects on n-GaN Schottky diodes

G. Umana-Membreno, U. Mishra, G. Parish, 2003 .

Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

Umesh K. Mishra, S. P. DenBaars, Yong-Hoon Cho, 1998 .

Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells

S. Denbaars, S. Keller, U. Mishra, 1998 .

Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells

S. Denbaars, S. Keller, U. Mishra, 1998 .

Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors

G. Umana-Membreno, U. Mishra, G. Parish, 2019, Sensors and Actuators B: Chemical.

Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM

S. Nakamura, U. Mishra, Feng Wu, 2022, IEEE Journal of Quantum Electronics.

Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, Arpan Chakraborty, 2004 .

Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding

Shuji Nakamura, Umesh K. Mishra, Hisashi Masui, 2006 .

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

S. I. Long, Umesh K. Mishra, Evelyn L. Hu, 1996 .

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

James S. Speck, Umesh K. Mishra, Yuval Golan, 1999 .

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

U. Mishra, J. Speck, E. Ahmadi, 2014 .

Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE

U. Mishra, S. Keller, N. Hatui, 2022, International Electron Devices Meeting.

Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs

S. Denbaars, N. Fichtenbaum, U. Mishra, 2008, IEEE Electron Device Letters.

600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

Primit Parikh, Toshihide Kikkawa, Kenji Imanishi, 2014, 2014 IEEE International Electron Devices Meeting.

Selective-area regrowth of GaN field emission tips

S. Denbaars, S. Keller, U. Mishra, 1997 .

Observation of huge nonlinear absorption enhancement near exciton resonance in GaN

S. Denbaars, Chi‐Kuang Sun, U. Mishra, 2003, Postconference Digest Quantum Electronics and Laser Science, 2003. QELS..

Femtosecond Z-scan measurement of GaN

Umesh K. Mishra, S. P. DenBaars, M. P. Mack, 1999 .

m-plane ( 101¯0) and ( 202¯1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling

H. Kroemer, U. Mishra, J. Speck, 2014 .

A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

U. Mishra, S. Keller, Silvia H. Chan, 2020 .

An improved methodology for extracting interface state density at Si3N4/GaN

U. Mishra, S. Keller, C. Gupta, 2020 .

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

O. Bierwagen, U. Mishra, J. Speck, 2010 .

Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin ﬁlms

S. Denbaars, U. Mishra, S. Keller, 2003 .

Design of composite channels for optimized transport in nitride devices

U. Mishra, Jasprit Singh, Madhusudan Singh, 2003 .

N-Face GaN Electronics for Heteroepitaxial and Bonded Structures

U. Mishra, 2015 .

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

Umesh K. Mishra, Bongim Jun, Ronald D. Schrimpf, 2003 .

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

peixiong zhao, D. Fleetwood, R. Weller, 2004, IEEE Transactions on Nuclear Science.

Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale

S. Denbaars, S. Nakamura, U. Mishra, 2021 .

Spatial control of InGaN luminescence by MOCVD selective epitaxy

S. Denbaars, S. Keller, U. Mishra, 1998 .

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

S. Denbaars, H. Craighead, U. Mishra, 1999 .

S. Denbaars, A. Tackeuchi, U. Mishra, 2001 .

Scanning tunneling microscope-induced luminescence of GaN at threading dislocations

S. Denbaars, H. Craighead, S. Keller, 1999 .

ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING

U. Mishra, Yana Gao, E. Hu, 2004 .

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

L. Coldren, S. Denbaars, S. Keller, 1998 .

Effects of As4 flux on reflection high‐energy electron diffraction oscillations during growth of GaAs at low temperatures

A. Gossard, R. Mirin, U. Mishra, 1994 .

The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy

U. Mishra, J. Speck, I. Smorchkova, 2002 .

Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy

S. Denbaars, S. Keller, U. Mishra, 2000 .

Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

S. Denbaars, C. Walle, U. Mishra, 2010 .

Electrostatic mechanisms responsible for device degradation in AlGaN/AlN/GaN HEMTs

peixiong zhao, R. Reed, D. Fleetwood, 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN

O. Ambacher, A. Gossard, D. Jena, 2002, cond-mat/0209664.

Current-induced spin polarization in gallium nitride

D. Awschalom, U. Mishra, J. Speck, 2008, 0906.0785.

High aspect ratio asymmetric gate structures employed in novel self‐aligned high electron mobility transistor technology

U. Mishra, L. Jelloian, L. Nguyen, 1990 .

AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer

U. Mishra, E. Hu, J. Ibbetson, 1997 .

Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure

S. Denbaars, U. Mishra, P. Kozodoy, 2001 .

Coupling of InGaN quantum well photoluminescence to silver surface plasmons

M. Boroditsky, E. Yablonovitch, I. Gontijo, 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).

N-Polar InAlN/AlN/GaN MIS-HEMTs

Nidhi, Feng Wu, Stacia Keller, 2010, IEEE Electron Device Letters.

Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz

Umesh K. Mishra, Giacinta Parish, Alessandro Chini, 2003 .

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

Umesh K. Mishra, Ronald D. Schrimpf, Daniel M. Fleetwood, 2010 .

Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

En Xia Zhang, Xiao Shen, Christiane Poblenz, 2011 .

Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs

U. K. Mishra, S. Keller, E. Ahmadi, 2019, 2019 14th European Microwave Integrated Circuits Conference (EuMIC).

Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

M. Higashiwaki, U. K. Mishra, R. A. York, 2011, IEEE Transactions on Microwave Theory and Techniques.

Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Patrick Roblin, Christiane Poblenz, Siddharth Rajan, 2010, IEEE Transactions on Microwave Theory and Techniques.

Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs

Robert A. York, Umesh K. Mishra, U. Mishra, 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

Mark J. W. Rodwell, S. I. Long, Umesh K. Mishra, 2003 .

Optimization of AlGaN/GaN HEMTs for high frequency operation

S. Denbaars, T. Palacios, S. Keller, 2006 .

Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

Umesh K. Mishra, S. P. DenBaars, Evelyn L. Hu, 1998 .

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Umesh K. Mishra, S. P. DenBaars, Bernd Keller, 1997 .

High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

S. Denbaars, S. Keller, U. Mishra, 1999 .

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

S. Denbaars, J. Muth, S. Keller, 1997 .

Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN

S. Denbaars, S. Keller, U. Mishra, 1998 .

Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding

S. Denbaars, L. McCarthy, U. Mishra, 2005 .

Comparison of spontaneous and stimulated emission from UV-blue photonic materials

J. B. Lam, S. Denbaars, W. Yang, 1999, Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464).

Detection of biological reactions by AlGaN/GaN biosensor

U. Mishra, G. Parish, B. Nener, 2012, COMMAD 2012.

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

R. Wilkins, H. Barnaby, peixiong zhao, 2004, IEEE Transactions on Nuclear Science.

Gallium nitride based electronics and opto-electronics

S. Denbaars, U. Mishra, U.K. Mishra, 1998, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).

High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector

Yi-Jen Chiu, J. Bowers, A. Gossard, 1998, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source

Patrick Roblin, Andrew Malonis, Christiane Poblenz, 2009, 2009 74th ARFTG Microwave Measurement Conference.

1 2 A pr 2 00 0 Dipole scattering in polarization induced two-dimensional electron gases

A. Gossard, D. Jena, U. Mishra, 2000 .

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

Christiane Poblenz, Umesh K. Mishra, Patrick Waltereit, 2006, IEICE Trans. Electron..

Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current

U. Mishra, S. Keller, N. Hatui, 2020, IEEE Electron Device Letters.

Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Impact of strain on free-exciton resonance energies in wurtzite AlN

S. Denbaars, S. Nakamura, U. Mishra, 2007 .