A. Ando

发表

A high-efficiency class-F GaN HEMT power amplifier with a diode predistortion linearizer

Y. Takayama, K. Honjo, R. Ishikawa, 2008, 2008 Asia-Pacific Microwave Conference.

A predistortion linearizer for a class-F GaN HEMT power amplifier using two independently controlled diodes

Y. Takayama, K. Honjo, R. Ishikawa, 2009, 2009 Asia Pacific Microwave Conference.

Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

T. Egawa, A. Wakejima, A. Ando, 2015 .

Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer

K. Inoue, T. Egawa, A. Wakejima, 2015, 2015 73rd Annual Device Research Conference (DRC).