K. Saitoh

A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory

H. Shirai, N. Kodama, T. Okazawa, 1991, International Electron Devices Meeting 1991 [Technical Digest].

A novel erasing technology for 3.3 V flash memory with 64 Mb capacity and beyond

T. Okazawa, H. Shirai, N. Kodama, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots

K. Saitoh, Shu-wei Li, S. Sasa, 2000 .

Formation of oxide-trapped charges in 6HSiC MOS structures☆

T. Ohshima, K. Saitoh, H. Okumura, 1997 .