F. Pascal

发表

Analytical modelling of Multiple-gate MOSFETs

O. Faynot, S. Cristoloveanu, B. Iniguez, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

Parasitic back-inferface conduction in planar and triple-gate SOI transistors

R. Ritzenthaler, O. Faynot, F. Lime, 2010, 2010 IEEE International SOI Conference (SOI).

A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs

R. Ritzenthaler, O. Faynot, F. Lime, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

1/f noise in strongly doped n-type GaAs under band-band illumination conditions

M. Levinshtein, F. Pascal, S. Rumyantsev, 1997 .

Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements

S. Jarrix, F. Pascal, A. Pénarier, 2007 .

Impact of Technological Parameters on the Low Frequency Noise of Advanced Heterojunction Bipolar Transistors

J. Raoult, M. Marin, M. Deen, 2007 .

Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

C. Delseny, S. Jarrix, G. Lecoy, 1994 .

Comparison of noise between passivated and unpassivated AlGaAs/GaAs and GaInP/GaAs HBTs

S. Jarrix, F. Pascal, Tgm Theo Kleinpenning, 1997 .

Generation‐recombination noise analysis in heavily doped p‐type GaAs transmission line models

S. Jarrix, F. Pascal, Tgm Theo Kleinpenning, 1996 .

Low frequency noise in p/sup +/-GaAs resistors

S. Jarrix, F. Pascal, J. Dangla, 1993 .

1/ƒ and g-r noise in AlGaAs epitaxial layers

F. Pascal, M. D. Murcia, L. Vandamme, 1994 .

Measurement and characterization of low frequency noise collector current in 0.13 μm SiGe:C HBTs

P. Chevalier, D. Gloria, S. Haendler, 2015, International Conference on Noise and Fluctuations.

Characterization of platinum electrodes by infrared spectroscopy

F. Pascal, J. Benziger, M. Soriaga, 1986 .

Influence of a base epitaxial regrowth on first order and low frequency noise measurements on GaInP/GaAs HBTs

F. Pascal, C. Delseny, G. Lecoy, 1998 .

Photodetection at 3.65 in the atmospheric window using heteroepitaxy

F. Pascal, A. Giani, J. Podlecki, 1996 .

Comparison of the effects of different surfactants on electrical parameters in Carbon Nanotube thin films

F. Martinez, F. Pascal, A. Hoffmann, 2011, 2011 21st International Conference on Noise and Fluctuations.

Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide

F. Pascal, P. Grosse, G. Bougnot, 1990 .

Low-frequency noise in GaN/GaAlN heterojunctions

M. Shur, M. Levinshtein, W. Knap, 1998 .

EXCESS LOW FREQUENCY NOISE IN SINGLE-WALL CARBON NANOTUBE

J. Deen, O. Nur, M. Willander, 2006 .

Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors

C. Delseny, B. Martinet, J. C. Vildeuil, 2005, Microelectron. Reliab..

Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors

M. J. Deen, F. Pascal, M. Deen, 2004 .

Electrical characterization of semiconductor materials and devices—review

M. J. Deen, F. Pascal, M. Deen, 2006 .

Electrical Characterization of Semiconductor Materials and Devices

Fabien Pascal, F. Pascal, M. Deen, 2007 .

Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers

F. Pascal, N. Mason, P. Grosse, 1991 .

Low-frequency noise in III-V high-speed devices

Annick Penarier, C. Delseny, S. Jarrix, 2002 .

Sensitivity and noise of micro-Hall magnetic sensors based on InGaAs quantum wells

D. Mailly, F. Pascal, A. Hoffmann, 2016 .

Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors

M. J. Deen, M. Marin, C. Delseny, 2008 .

1∕f noise and percolation in carbon nanotube random networks

F. Pascal, A. Hoffmann, S. Soliveres, 2007 .

Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors: Impact of collector doping

P. Chevalier, D. Gloria, S. Haendler, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications

P. Chevalier, D. Gloria, S. Haendler, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors

S. Haendler, G. Morin, A. Hoffmann, 2011, 2011 21st International Conference on Noise and Fluctuations.

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

M. Jamal Deen, F. Pascal, M. Deen, 2003, SPIE International Symposium on Fluctuations and Noise.

Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT

Annick Penarier, C. Delseny, F. Pascal, 2000 .

Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors

S. Jarrix, F. Pascal, S. Blayac, 2003 .

Comparison of low-frequency noise in III-V and Si/SiGe HBTs

M. Jamal Deen, Annick Penarier, Fabien Pascal, 2003, SPIE International Symposium on Fluctuations and Noise.

Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities

C. Delseny, S. Jarrix, G. Lecoy, 1997 .

Characterization of polysilicon bipolar transistors by low-frequency noise and correlation noise measurements

F. Pascal, A. Pénarier, C. Delseny, 2001 .

Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices

Leone Gouskov, Philippe Grosse, Georges Bougnot, 1987, Other Conferences.

Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

P. Grosse, G. Bougnot, A. Foucaran, 1988 .