A. Murakoshi

发表

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and ni SALICIDE

T. Kudo, H. Ishiuchi, M. Takayanagi, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing

A. Murakoshi, Tsubasa Harada, K. Miyano, 2016 .

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

A. Murakoshi, Tsubasa Harada, K. Miyano, 2017 .

Improvement of P?N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology

K. Suguro, A. Murakoshi, M. Iwase, 2013 .

Suppression of the Floating-Body Effect in SOI MOSFET's by the Bandgap Engineering Method Using a Si Ge Source Structure

Kazuya Matsuzawa, Mamoru Terauchi, Naoyuki Shigyo, 1997 .

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

Kazuya Matsuzawa, Mamoru Terauchi, Naoyuki Shigyo, 1997 .

Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing

K. Suguro, A. Murakoshi, M. Iwase, 2013 .

Technology trends of silicon-on-insulator-its advantages and problems to be solved

Kazuya Matsuzawa, Naoyuki Shigyo, Yukihiro Ushiku, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Hole generation by icosahedral B12 in high‐dose boron as‐implanted silicon

Miyoko O. Watanabe, A. Murakoshi, M. Yoshiki, 1993 .

Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor

A. Murakoshi, M. Yoshiki, I. Mizushima, 1994 .

Ultra-shallow depth profiling with secondary ion mass spectrometry

A. Murakoshi, C. Hongo, M. Tomita, 2004 .

Accurate SIMS depth profiling for ultra-shallow implants using backside SIMS

A. Murakoshi, C. Hongo, M. Tomita, 2004 .

Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry

A. Murakoshi, C. Hongo, M. Tomita, 2003 .

Estimation of ultra-shallow implants using SIMS, NRA and chemical analysis

A. Murakoshi, M. Tomita, Masamichi Suzuki, 2003 .

10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

K. Suguro, A. Murakoshi, T. Iinuma, 2002 .

Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si

K. Suguro, A. Murakoshi, T. Iinuma, 2001 .

Increase of parasitic resistance in shallow p/sup +/ extension by SiN sidewall process and its improvement by Ge preamorphization for sub-0.25-/spl mu/m pMOSFET's

S. Inaba, Y. Toyoshima, A. Murakoshi, 1999 .

Ultra high dose boron ion implantation: super-saturation of boron and its application

K. Suguro, N. Aoki, A. Murakoshi, 1998 .