Je-Min Hung

发表

A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors

Meng-Fan Chang, Yen-Cheng Chiu, Wei-Chen Wei, 2020, IEEE Journal of Solid-State Circuits.

A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device

Yen-Cheng Chiu, Yu-Der Chih, Cheng-Xin Xue, 2021, IEEE Journal of Solid-State Circuits.

A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

Yen-Cheng Chiu, Wei-Chen Wei, Ren-Shuo Liu, 2020, Nature Electronics.

Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices

Cheng-Xin Xue, Je-Min Hung, Chuan-Jia Jhang, 2021, IEEE Transactions on Circuits and Systems I: Regular Papers.

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices

Y. Chih, C. Lo, Meng-Fan Chang, 2022, 2022 IEEE International Solid- State Circuits Conference (ISSCC).

A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

Y. Chih, C. Lo, Meng-Fan Chang, 2020, Nature Electronics.

Monolithic 3D+-IC Based Massively Parallel Compute-in-Memory Macro for Accelerating Database and Machine Learning Primitives

Hariram Thirucherai Govindarajan, Srivatsa Srinivasa Rangachar, J. Sampson, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, 2021, 2021 IEEE International Solid- State Circuits Conference (ISSCC).

A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices

Y. Chih, C. Lo, Meng-Fan Chang, 2021, Nature Electronics.

13.4 A 22nm 1Mb 1024b-Read and Near-Memory-Computing Dual-Mode STT-MRAM Macro with 42.6GB/s Read Bandwidth for Security-Aware Mobile Devices

Meng-Fan Chang, Yen-Cheng Chiu, Cheng-Xin Xue, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices

Y. Chih, C. Lo, Meng-Fan Chang, 2023, IEEE Journal of Solid-State Circuits.

CiM3D: Comparator-in-Memory Designs Using Monolithic 3-D Technology for Accelerating Data-Intensive Applications

Jia-Min Shieh, Jack Sampson, Cheng-Xin Xue, 2021, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Challenges and Trends inDeveloping Nonvolatile Memory-Enabled Computing Chips for Intelligent Edge Devices

Meng-Fan Chang, Xueqing Li, Juejian Wu, 2020, IEEE Transactions on Electron Devices.

Challenges and Trends of Nonvolatile In-Memory-Computation Circuits for AI Edge Devices

Meng-Fan Chang, Yen-Cheng Chiu, Je-Min Hung, 2021, IEEE Open Journal of the Solid-State Circuits Society.

First Demonstration of Ultrafast Laser Annealed Monolithic 3D Gate-All-Around CMOS Logic and FeFET Memory with Near-Memory-Computing Macro

Kun-Ming Chen, G. Huang, C. Hu, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).