J. Epler

发表

High performance thin-film flip-chip InGaN–GaN light-emitting diodes

Paul S. Martin, D. Steigerwald, M. O. Holcomb, 2006 .

The application of quantum well solar cells to thermophotovoltaics

C. C. Button, Jenny Nelson, Ian Ballard, 1998 .

Low‐threshold gain‐guided coupled‐stripe quantum well diode lasers by laser‐assisted processing

R. Burnham, J. Epler, T. Paoli, 1987 .

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Joel R. Wendt, Michael R. Krames, Jerry A. Simmons, 2004 .

Mode behavior and high resolution spectra of circularly‐symmetric GaAs‐AlGaAs air‐post vertical cavity surface emitting lasers

Hans W. Lehmann, Hans Sigg, J. E. Epler, 1996 .

Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity‐induced disordering

J. Epler, R. Thornton, T. Paoli, 1987 .

Monolithically integrated optical differential amplifiers for applications in smart pixel arrays

P. Seitz, D. Leipold, J. Epler, 1996 .

Mode‐locked coupled‐stripe quantum well laser operation (λ∼7350 Å) in a tunable (Δℏω∼37 meV>kT) external grating cavity

N. Holonyak, R. Burnham, J. Epler, 1985 .

Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, D. C. Hall, 1988 .

A carrier escape study from InP/InGaAs single quantum well solar cells

M. Pate, J. Nelson, J. Epler, 1998 .

Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disordering

J. Epler, R. Thornton, T. Paoli, 1988 .

Multiple-wavelength diode laser superarray

D. W. Treat, J. Epler, T. Paoli, 1990 .

Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si

N. Holonyak, D. Deppe, R. Matyi, 1988 .

Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers

N. Holonyak, D. Deppe, R. Burnham, 1986 .

Transverse modes of gain‐guided coupled‐stripe lasers: External cavity control of the emitter spacing

N. Holonyak, R. Burnham, M. Blouke, 1985 .

Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures

N. Holonyak, R. Burnham, J. Epler, 1987 .

Broadband tuning (ΔE∼100 meV) of Alx Ga1−xAs quantum well heterostructure lasers with an external grating

N. Holonyak, W. Streifer, R. Burnham, 1983 .

High‐energy (λ≲7300 Å) 300 K operation of single‐ and multiple‐stripe quantum‐well heterostructure laser diodes in an external grating cavity

N. Holonyak, W. Streifer, R. Burnham, 1984 .

Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes

N. Holonyak, R. Burnham, J. Epler, 1985 .

Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures

J. Epler, H. Zappe, S. Lau, 1996, IEEE Photonics Technology Letters.

Supermodes of multiple‐stripe quantum‐well heterostructure laser diodes operated (cw, 300 K) in an external‐grating cavity

N. Holonyak, W. Streifer, R. Burnham, 1985 .

A new approach to p-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells

M. Pate, M. Hopkinson, J. Nelson, 1996, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.

Evolution of surface topography during metalorganic vapor phase epitaxy of AlxGa1−xAs (0 ≦ x ≦ 1)

J. Epler, 1995 .

Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient

J. Epler, T. Jung, H. P. Schweizer, 1993 .

Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor

R. Bringans, D. W. Treat, J. Epler, 1989 .

In situ laser patterned desorption of GaAs quantum wells for monolithic multiple wavelength diode lasers

D. W. Treat, J. Epler, T. Paoli, 1989 .

Current confinement in a GaAs/AlGaAs heterostructure by in situ laser‐patterned desorption of a current‐blocking quantum well

D. W. Treat, J. Epler, T. Paoli, 1990 .

Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers

N. Holonyak, R. Burnham, J. Epler, 1987 .

Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping

N. Holonyak, D. Nam, R. Burnham, 1986 .

Pressure dependence of AlxGa1−xAs light emitting diodes near the direct‐indirect transition

N. Holonyak, M. Craford, H. G. Drickamer, 1985 .

AlGaAs multiple‐wavelength light‐emitting bar grown by laser‐assisted metalorganic chemical vapor deposition

D. W. Treat, J. Epler, T. Paoli, 1988 .

A superluminescent diode at 1.3 /spl mu/m with very low spectral modulation

J. Epler, H. Sigg, H. Lehmann, 1994 .

Diode A S uperluminescen t with Very Low Spectral Modulation

J. Epler, H. Sigg, H. Lehmann, 1994 .

Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity

Thomas L. Paoli, Robert D. Burnham, Robert L. Thornton, 1986 .

Layer disordering of GaAs‐AlGaAs superlattices by diffusion of laser‐incorporated Si

J. Epler, F. Endicott, F. Ponce, 1988 .

Laser Incorporation of Silicon into GaAs-AlGaAs Heterostructures

J. Epler, F. Endicott, F. Ponce, 1988 .

Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers

Robert D. Burnham, William Streifer, Robert L. Thornton, 1985 .

Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array

N. Holonyak, D. Deppe, R. Burnham, 1987 .

Low‐threshold disorder‐defined buried‐heterostructure AlGaAs diode lasers by anisotropic diffusion of laser‐incorporated Si

R. Burnham, J. Epler, R. Thornton, 1987 .

Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-defined recessed gratings

Daniel Hofstetter, Hans Zappe, J. E. Epler, 1994 .

Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs

J. Epler, H. P. Schweizer, 1993 .

Evolution of surface topography during metalorganic vapor phase epitaxy of InP/InGaAs/InP quantum well heterostructures

J. Epler, H. Sigg, J. Söchtig, 1994 .

Broad-band gain in optically pumped S 2

J. Epler, J. Verdeyen, 1983 .

Magnetron Dry Etching for Photonic Device Fabrication

Hans Zappe, R. Widmer, Hans W. Lehmann, 1993 .

Stability of 300 K continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

III-nitride LEDs with photonic crystal structures

Dong Li, Joel R. Wendt, Michael R. Krames, 2005, SPIE OPTO.

Multiple wavelength Fabry–Pérot lasers fabricated by vacancy‐enhanced quantum well disordering

Daniel Hofstetter, Hans Zappe, P. Riel, 1995 .

Ridge waveguide DBR laser with nonabsorbing grating and transparent integrated waveguide

J. Epler, H. Zappe, D. Hofstetter, 1995 .

VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

N. Holonyak, D. Nam, D. Deppe, 1987, IEEE Transactions on Electron Devices.

Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si

N. Holonyak, D. Nam, J. Lee, 1987 .

Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering

J. Epler, R. Thornton, T. Paoli, 1988 .

Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering

R. Burnham, J. Epler, R. Thornton, 1987 .

High performance deep red AlAs/AlGaAs top-emitting VCSELs grown by MOVPE at high growth rates

J. E. Epler, Michael A. J. Moser, Karlheinz H. Gulden, 1997 .

Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Michael R. Krames, Werner K. Goetz, M. Kneissl, 2006 .

Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

Hisashi Shichijo, Dennis G. Deppe, Richard J. Matyi, 1987 .

Dependence of central-lobe output power on fill factor of an in-phase laser array

J. Epler, R. Thornton, T. Paoli, 1987 .

Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter

J. Epler, L. Kirste, H. Beck, 2020 .

Hydrostatic pressure measurements (≲12 kbar) on single‐ and multiple‐stripe quantum‐well heterostructure laser diodes

N. Holonyak, R. Burnham, H. G. Drickamer, 1985 .

Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source

Thomas L. Paoli, Robert D. Burnham, Robert L. Thornton, 1987 .

Anomalous threshold current and time delays in index-guided AlxGa1−xAs-GaAs quantum-well lasers

N. Holonyak, J. Epler, K. Hsieh, 1987 .

Buried‐oxide ridge‐waveguide InAlAs‐InP‐InGaAsP (λ∼1.3 μm) quantum well heterostructure laser diodes

N. Holonyak, M. Krames, J. Epler, 1994 .

Optoelectronic Smart Pixels Monallithically Integrated

P. Seitz, J. Epler, B. D. Patterson, 1994, Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.

Extremely smooth sidewalls for GaAs/AlGaAs ridge waveguides

J. Epler, H. Zappe, H. Lehmann, 1993 .