C. Humphreys

C. Humphreys, A. Phillips, H. Xiu, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Misfit dislocations in green-emitting InGaN/GaN quantum well structures

C. Humphreys, M. E. Vickers, R. Datta, 2005 .

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

K. B. Lee, C. Humphreys, R. Oliver, 2018, Journal of Applied Physics.

Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth

P. D. Brown, C. Humphreys, 1998 .

Control of Point Defects in Semiconductors

P. D. Brown, C. Humphreys, Y. Y. Loginov, 1994 .

Effects of electron-beam exposure on a ruthenium nanocluster polymer

Michael D. R. Thomas, H. Ahmed, C. Humphreys, 2001 .

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

C. Humphreys, F. Oehler, T. Badcock, 2014 .

Dislocation Behaviour in Ge x Si 1-x Epilayers on (001)Si

C. Humphreys, D. Maher, E. Kvam, 1989 .

Capillary-bonding of thin LEDs onto non-native substrates by transfer-printing

D. Wallis, M. Dawson, E. Gu, 2014, 2014 IEEE Photonics Conference.

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy

C. Humphreys, P. Chalker, D. Holec, 2009, Journal of Applied Physics.

Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy.

C. Humphreys, A. Bright, N. Sharma, 2001, Journal of electron microscopy.

Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

Anthony J. Kenyon, Nikhil Sharma, C. E. Chryssou, 2002 .

TEM specimen preparation techniques

C. Humphreys, K. Muraleedharan, D. S. Rao, 2010 .

Materials science and engineering in Britain

C. Humphreys, 1989, Advanced Materials.

High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems

C. Humphreys, R. Oliver, M. Galtrey, 2008 .

Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3

C. Boothroyd, C. Humphreys, G. Botton, 1999 .

Electron‐beam induced crystallization transition in self‐developing amorphous AlF3 resists

C. Boothroyd, C. Humphreys, G. S. Chen, 1996 .

Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction

H. Fraser, C. Humphreys, J. Bean, 1987 .

Cavity Enhancement of Single Quantum Dot Emission in the Blue

M. Holmes, C. Humphreys, R. Taylor, 2009, Nanoscale research letters.

Chemical mapping of InGaN/GaN LEDs

C. Humphreys, N. Sharma, J. Barnard, 2018 .

The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key

C. Humphreys, J. Barnard, R. Oliver, 2008 .

Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells

C. Humphreys, N. Sharma, Jinku Lee, 2001 .

Dating the Crucifixion

C. Humphreys, W. G. Waddington, 1983, Nature.

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

C. Humphreys, D. Hasko, G. Briggs, 2005 .

In-plane imperfections in GaN studied by x-ray diffraction

C. Humphreys, M. E. Vickers, R. Datta, 2005 .

Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials

C. Humphreys, D. Papageorgiou, O. Fenwick, 2022, Physical Review B.

Carrier distributions in InGaN/GaN light‐emitting diodes

C. Humphreys, R. Oliver, M. Kappers, 2015 .

Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

E. O’Reilly, C. Humphreys, M. Caro, 2015, 1509.07099.

The optimum voltage in very high voltage electron microscopy

C. Humphreys, 1972 .

Strain Relaxation in an AlGaN/GaN Quantum Well System

C. Humphreys, M. Kappers, C. McAleese, 2008 .

Structure of the Al/Al2O3 interface

R. Timsit, C. Humphreys, J. Hutchison, 1985 .

Examination of the Al/Al2O3 interface by high-resolution electron microscopy

R. Timsit, C. Humphreys, J. Hutchison, 1985 .

THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y1Ba2Cu3O9-y

C. Humphreys, D. Eaglesham, W. Clegg, 1987 .

Silica‐Supported Fe ? Pd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity

C. Humphreys, P. Gallezot, P. Braunstein, 1988 .

Radiation damage of polymers in the million volt electron microscope

C. Humphreys, D. Grubb, L. Thomas, 1970 .

Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy

P. D. Brown, C. Humphreys, Y. Xin, 1998 .

Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures

C. Humphreys, J. Titchmarsh, J. Bullock, 1986 .

The critical‐voltage effect in convergent‐beam high‐voltage electron diffraction

C. Humphreys, D. Imeson, J. Sellar, 1980 .

The critical voltage effect in high voltage electron microscopy

C. Humphreys, R. M. Fisher, J. Lally, 1972 .

Convergent Beam Electron Diffraction

C. Humphreys, 1999 .

CBED and CBIM from semiconductors and superconductors

H. Fraser, C. Humphreys, D. Eaglesham, 1988 .

High voltage electron microscopy

Colin J. Humphreys, M. J. Goringe, Timothy K. Maugel, 1973 .

Maximizing the penetration in high voltage electron microscopy

C. Humphreys, R. M. Fisher, J. Lally, 1971 .

Kikuchi patterns in a high voltage electron microscope

C. Humphreys, L. Thomas, 1970 .

Measurement of low-order structure factors for silicon from zone-axis CBED patterns

C. Humphreys, D. Bird, N. Zaluzec, 1995 .

Absorption parameters in electron diffraction theory

C. Humphreys, P. Hirsch, 1968 .

Boron segregation in a (Fe, V, B) TiAl based alloy

C. Boothroyd, C. Humphreys, B. Inkson, 1993 .

The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law.

C. Humphreys, 2012, Acta crystallographica. Section A, Foundations of crystallography.

The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy

C. Humphreys, G. Botton, C. Jones, 2000 .

A multiple scattering transport theory for electron

C. Humphreys, J. P. Spencer, 1980 .

A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons

C. Humphreys, P. Hirsch, J. P. Spencer, 1972 .

The dissociation of the [a + c] dislocation in GaN

Matthew K. Horton, P. Nellist, C. Humphreys, 2013 .

Novel fabrication method for nanometer‐scale silicon dots and wires

Colin J. Humphreys, Chris Boothroyd, C. Boothroyd, 1993 .

Electrons seen in orbit

C. Humphreys, 1999, Nature.

A TEM STUDY OF THE EFFECT OF PLATINUM GROUP METALS IN ADVANCED SINGLE CRYSTAL NICKEL-BASE SUPERALLOYS

C. Humphreys, C. Jones, S. Tin, 2004 .

The energy dependence of axial coherent bremsstrahlung at low accelerating voltages

J. H. Butler, J. Spence, C. Humphreys, 1984 .

Additional image peaks in the high resolution imaging of dislocations

C. Humphreys, E. Butler, A. Hart-davis, 1977 .

On the dissociation of prism plane superdislocations in Ti3Al

C. Humphreys, J. Wiezorek, S. Court, 1995 .

On the hierarchy of planar fault energies in TiAl

C. Humphreys, J. Wiezorek, 1995 .

Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction

H. Fraser, C. Humphreys, J. Wiezorek, 1994 .

Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

The effect of oxygen incorporation in sputtered scandium nitride films

C. Humphreys, Z. Barber, M. Moram, 2008 .

Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer

C. Humphreys, P. Chalker, Z. Barber, 2007 .

Dislocation reduction in gallium nitride films using scandium nitride interlayers

Yan Zhang, Colin J. Humphreys, Menno J. Kappers, 2007 .

Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys

C. Humphreys, D. Kiener, D. Holec, 2011, 1201.2842.

Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1−xN

C. Humphreys, J. Neugebauer, D. Holec, 2011 .

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

C. Humphreys, G. Botton, M. Couillard, 2010 .

The effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

P. D. Brown, W. Richter, C. Humphreys, 1999 .

Dislocations at 120° order interfaces in TiAl

C. Humphreys, B. Inkson, 1996 .

Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase

C. Boothroyd, C. Humphreys, B. Inkson, 1995 .

Atom positions in the R-phase unit cell in TiNi shape memory alloy

C. Humphreys, K. Knowles, Xiaojuan Wu, 1996, Journal of Materials Science.

Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions

C. Humphreys, C. Jones, E. Pekarskaya, 1998 .

Microstructure of A γ−α2−β TiAl alloy containing iron and vanadium

C. Boothroyd, C. Humphreys, B. Inkson, 1993 .

The atomic structure of the NiSi2-(001)Si interface

C. Humphreys, D. Cherns, C. Hetherington, 1984 .

Tetragonal and monoclinic forms of GexSi1−x epitaxial layers

H. Fraser, C. Humphreys, D. Eaglesham, 1989 .

Ultra-high temperature intermetallics for the third millennium

C. Humphreys, A. Kelly, C. Jones, 2000 .

A high‐resolution electron microscopic study of defects in sodium β′″‐alumina

David J. Smith, C. Humphreys, R. Hull, 1983 .

High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAl

C. Humphreys, B. Inkson, 1996 .

An Hrem Investigation of a {1 2 1} L10 Boundary in Tial

C. Humphreys, B. Inkson, 1994 .

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

C. Humphreys, M. J. Godfrey, J. Barnard, 2005 .

HREM STUDIES OF THE (001) SURFACE OF YBA2CU4O8

C. Humphreys, Wuzong Zhou, Y. Xin, 1995 .

New phases in the superconducting Y: Ba:Cu:O system

C. Humphreys, D. Eaglesham, W. Clegg, 1987 .

On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductors

D. G. McCartney, C. Humphreys, J. Zhang, 1990 .

Prospects of III-nitride optoelectronics grown on Si

D. Wallis, C. Humphreys, D Zhu, 2013, Reports on progress in physics. Physical Society.

Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI

C. Humphreys, C. Rossouw, A. P. Ofori, 2005 .

A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy

Rolf Sandström, Colin J. Humphreys, C. Humphreys, 1974, Journal of Physics D: Applied Physics.

Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

C. Humphreys, B. Hourahine, R. Martin, 2013, Microscopy and Microanalysis.

Lattice distortions in GaN thin films on (0001) sapphire

Colin J. Humphreys, Menno J. Kappers, Dandan Zhu, 2010 .

On the origin of threading dislocations in GaN films

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image

C. Humphreys, J. Barnard, R. Datta, 2004 .

The origin of dislocations in multilayers

Colin J. Humphreys, D. J. Eaglesham, C. Humphreys, 1991 .

DEFECT CONTRAST AND RESOLUTION IN HIGH VOLTAGE ELECTRON MICROSCOPY.

C. Humphreys, E. Hewat, G. Thomas, 1972 .

Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice.

C. Humphreys, J. Barnard, R. Oliver, 2011, Ultramicroscopy.

Strains and Misfit Dislocations at Interfaces

H. Fraser, C. Humphreys, D. Eaglesham, 1989 .

Investigation of the GaN-on-GaAs interface for vertical power device applications

C. T. Foxon, S. Haigh, M. Uren, 2014 .

Degradation of GaN-based quantum well light-emitting diodes

W. A. Phillips, Colin J. Humphreys, C. Humphreys, 2008 .

Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Peter Blood, Peter Michael Smowton, Iestyn Pope, 2003, Applied Physics Letters.

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

K. B. Lee, D. Wallis, C. Humphreys, 2018 .

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

K. B. Lee, M. Uren, D. Wallis, 2015 .

C. Humphreys, M. Meneghini, E. Zanoni, 2014 .

Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings

Stewart Edward Hooper, Jonathan Heffernan, Colin J. Humphreys, 2008 .

HANSIS software tool for the automated analysis of HOLZ lines.

D. Holec, D.V. Sridhara Rao, C.J. Humphreys, 2009, Ultramicroscopy.

Convergent-beam imaging−a transmission electron microscopy technique for investigating small localized distortions in crystals

H. Fraser, C. Humphreys, D. Eaglesham, 1988 .

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.

Matthew K. Horton, C. Humphreys, R. Oliver, 2017, Nano letters.

Segregation of In to dislocations in InGaN.

Matthew K. Horton, S. Haigh, C. Humphreys, 2015, Nano letters.

The effect of dislocations on the efficiency of InGaN/GaN solar cells

Feng Gao, Colin J. Humphreys, Menno J. Kappers, 2013 .

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2011 .

Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure

C. Humphreys, Y. Nishino, G. Botton, 2000 .

Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes

C. Humphreys, O. Fenwick, W. Gillin, 2021, Advanced Optical Materials.

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

C. Humphreys, J. Barnard, R. Oliver, 2010 .

Evolution and religion

C. Humphreys, R. White, 1993, Nature.

Solar eclipse of 1207 BC helps to date pharaohs

C. Humphreys, G. Waddington, 2017 .

Moon village: show us the money

C. Humphreys, G. Waddington, David Nixon, 2018 .

Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

C. Humphreys, D. Saxey, J. Heffernan, 2012 .

Microstructural origins of localization in InGaN quantum wells

C. Humphreys, D. Saxey, R. Oliver, 2010 .

Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

Alfred Cerezo, David J. Larson, Colin J. Humphreys, 2008 .

Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensions

C. Humphreys, Dandan Zhu, R. Oliver, 2008 .

Compositional inhomogeneity of a high-efficiency InxGa1-xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe

C. Humphreys, D. Larson, Dandan Zhu, 2008 .

Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]

C. Humphreys, R. Oliver, A. Cerezo, 2007 .

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Debbie J. Stokes, Alfred Cerezo, Colin J. Humphreys, 2007 .

Does In form In-rich clusters in InGaN quantum wells?

Colin J. Humphreys, C. Humphreys, 2007 .

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

C. Humphreys, F. Oehler, R. Dusane, 2014 .

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption

C. Humphreys, R. Oliver, M. Kappers, 2013 .

Growth, microstructure and morphology of epitaxial ScGaN films

C. Humphreys, Siyuan Zhang, M. Kappers, 2012 .

Dislocation Climb in c-Plane AlN Films

C. Humphreys, W. Fu, M. Kappers, 2011 .

Dislocation movement in GaN films

Colin J. Humphreys, Menno J. Kappers, M. Häberlen, 2010 .

The effects of annealing on non-polar ( 1 1 2̄ 0) a-plane GaN films

Colin J. Humphreys, Menno J. Kappers, M. Häberlen, 2010 .

Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN

C. Humphreys, R. Oliver, M. Kappers, 2009 .

Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

C. Humphreys, R. Oliver, M. Kappers, 2009 .

Assessment of scanning spreading resistance microscopy for application to n‐type GaN

C. Humphreys, R. Oliver, M. Kappers, 2008 .

Gross well‐width fluctuations in InGaN quantum wells

C. Humphreys, R. Oliver, M. Kappers, 2008 .

Unintentional doping in GaN assessed by scanning capacitance microscopy

C. Humphreys, R. Oliver, M. Kappers, 2008 .

Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride

C. Humphreys, R. Oliver, M. Kappers, 2008 .

The origin and reduction of dislocations in Gallium Nitride

C. Humphreys, R. Oliver, R. Datta, 2008 .

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

C. Humphreys, R. Oliver, M. Kappers, 2015 .

High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux.

C. Humphreys, Y. Xin, H. Tatsuoka, 1998 .

Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure

C. Humphreys, E. L. Boulbar, R. Martin, 2017 .

Domain boundaries in epitaxial wurtzite GaN

C. T. Foxon, C. Humphreys, Y. Xin, 1997 .

TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs

C. T. Foxon, C. Boothroyd, C. Humphreys, 1996 .

Mechanical properties of graphene

P. Puech, C. Humphreys, D. Machon, 2021, Applied Physics Reviews.

Geometric and electronic structure of a semiconductor superlattice

M. Kelly, C. Humphreys, R. Davies, 1985, Nature.

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

W. A. Phillips, C. Humphreys, A. Crossley, 2004 .

Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN

Colin J. Humphreys, Menno J. Kappers, Zoe H. Barber, 2004 .

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

C. Humphreys, S. Schulz, R. Oliver, 2016 .

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

C. Humphreys, R. Oliver, M. Kappers, 2016 .

Improvements in a-plane GaN crystal quality by a two-step growth process

Colin J. Humphreys, Clifford McAleese, Menno J. Kappers, 2008 .

Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells

C. Humphreys, M. Kappers, P. Dawson, 2008 .

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

C. Humphreys, R. Oliver, M. Kappers, 2015 .

Properties of trench defects in InGaN/GaN quantum well structures

C. Humphreys, Dandan Zhu, T. Puchtler, 2013 .

Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers

C. Humphreys, M. Kappers, M. Moram, 2010 .

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Robert A. Taylor, James H. Rice, G. Andrew D. Briggs, 2003 .

Dynamics of single InGaN quantum dots

J. D. Smith, C. Humphreys, G. Briggs, 2004 .

Resonant excitation photoluminescence studies of InGaN /GaN single quantum well structures

C. Humphreys, M. J. Godfrey, M. Kappers, 2006 .

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013, Photonics West - Optoelectronic Materials and Devices.

Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells

Phil Dawson, A. J. Kent, Colin J. Humphreys, 2005 .

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

C. Humphreys, T. Puchtler, R. Oliver, 2012 .

Growth modes in heteroepitaxy of InGaN on GaN

G. Andrew D. Briggs, Colin J. Humphreys, Menno J. Kappers, 2005 .

Imaging dislocations in gallium nitride across broad areas using atomic force microscopy.

C. Humphreys, R. Oliver, D. Holec, 2010, The Review of scientific instruments.

Electron Beam Induced Crystallisation in Iron (III) Fluoride

C. Boothroyd, C. Humphreys, G. Botton, 1995 .

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

C. Humphreys, M. Pristovsek, F. Oehler, 2018, Journal of Applied Physics.

Critical thickness calculations for InGaN/GaN

David Holec, Colin J. Humphreys, Menno J. Kappers, 2007 .

The distribution of intensity in electron diffraction patterns due to phonon scattering

C. Humphreys, P. Rez, M. Whelan, 1977 .

Inelastic scattering of fast electrons by crystals

C. Humphreys, M. Whelan, 1969 .

Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

C. Humphreys, J. Barnard, M. E. Vickers, 2003 .

Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

Erdan Gu, Martin D. Dawson, Benoit Guilhabert, 2013 .

Nanometre hole formation in MgO using electron beams

Colin J. Humphreys, Tim J. Bullough, C. Humphreys, 1990 .

Microscopic, Electrical and Optical Studies on InGaN/GaN Quantum Wells Based LED Devices

C. Humphreys, M. Meneghini, G. Meneghesso, 2014 .

Electron beam writing on a 20-Å scale in metal β-aluminas

C. Humphreys, J. Eades, J. Mochel, 1983 .

Temporal variation in photoluminescence from single InGaN quantum dots

C. Humphreys, G. Briggs, R. Taylor, 2004 .

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

C. Humphreys, A. Tahraoui, R. Taylor, 2008 .

Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot

C. Humphreys, A. Tahraoui, R. Taylor, 2007 .

Equilibrium critical thickness for misfit dislocations in III-nitrides

David Holec, Colin J. Humphreys, Clifford McAleese, 2008 .

Misfit dislocations in In‐rich InGaN/GaN quantum well structures

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2006 .

Dopant profiling with the scanning electron microscope—A study of Si

R. F. Broom, Colin J. Humphreys, C. Humphreys, 2002 .

Electron holography of an in‐situ biased GaN‐based LED

C. Humphreys, M. Kappers, C. McAleese, 2012 .

Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals

C. Humphreys, D. Eaglesham, C. Hetherington, 1986 .

Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data

V. V. Emtsev, C. Humphreys, N. Arutyunov, 2003 .

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

C. T. Foxon, K. B. Lee, D. Wallis, 2016 .

Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates

C. T. Foxon, C. Humphreys, I. Harrison, 2003 .

A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy

T. Walther, C. Humphreys, 1999 .

Assessment of semiconductor epitaxial growth by transmission electron microscopy

C. Humphreys, P. Brown, 1995 .

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

C. T. Foxon, C. Humphreys, A. Kent, 2008 .

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2006 .

Chemical mapping and formation of V-defects in InGaN multiple quantum wells

Nikhil Sharma, Colin J. Humphreys, C. Humphreys, 2000 .

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates

C. Humphreys, R. Hao, T. Badcock, 2011, Japanese Journal of Applied Physics.

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2003 .

Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN.

J. Zuo, J. Spence, C. Humphreys, 2010, Acta crystallographica. Section A, Foundations of crystallography.

Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction

Colin J. Humphreys, Zoe H. Barber, Michelle A. Moram, 2007 .

Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy

C. T. Foxon, C. Humphreys, Y. Xin, 1997 .

Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy

R. A. Davies, Colin J. Humphreys, M. Weyland, 2001 .

Electric fields in AlGaN/GaN quantum well structures

C. Humphreys, M. J. Godfrey, J. Barnard, 2006 .

Quantifying The Effects Of Amorphous Layers on Image Contrast Using Energy Filtered Transmission Electron Microscopy

C. Boothroyd, C. Humphreys, W. Stobbs, 1994 .

Elastic constants and critical thicknesses of ScGaN and ScAlN

Wai Yuen Fu, Siyuan Zhang, David Holec, 2013 .

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

M. Heuken, S. Thomas, W. A. Phillips, 2009, OPTO.

Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy

G. Borghs, C. Humphreys, B. Degroote, 2007 .

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Duc V. Dinh, Vitaly Z. Zubialevich, Colin J. Humphreys, 2014 .

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds

C. Humphreys, F. Oehler, M. E. Vickers, 2013 .

Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering

C. Humphreys, M. E. Vickers, M. Kappers, 2012 .

Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

Erdan Gu, Martin D. Dawson, Anthony E. Kelly, 2014 .

Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy

C. Humphreys, R. Oliver, M. Kappers, 2006 .

Solid-State Lighting Based on Light Emitting Diode Technology

C. Humphreys, Dandan Zhu, 2016 .

Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire

Q. Ramasse, C. Humphreys, M. Pristovsek, 2016 .

Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE

C. Humphreys, J. Barnard, R. Datta, 2004 .

Mechanisms of bending of threading dislocations in MOVPE‐grown GaN on (0001) sapphire

C. Humphreys, R. Datta, 2006 .

Reduction of threading dislocation density using in-situ SiNx interlayers

C. Humphreys, J. Barnard, R. Datta, 2005 .

The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2006 .

InGaN as a Substrate for AC Photoelectrochemical Imaging

Bo Zhou, Anirban Das, Menno J Kappers, 2019, Sensors.

High resolution Laplace Deep Level Transient Spectroscopy studies of shallow and deep levels in n-GaN

C. Humphreys, M. Kappers, J. Evans-Freeman, 2008, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices.

Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM

P. Nellist, C. Humphreys, P. Galindo, 2014, Journal of Physics: Conference Series.

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot

C. Humphreys, A. Tahraoui, M. Hadjipanayi, 2009, Nanotechnology.

Dielectric response of wurtzite gallium nitride in the terahertz frequency range

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2016 .

Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment

C. Humphreys, R. Fornari, P. Hageman, 2010 .

Analysis of EELS near edge structures to study the bonding character in intermetallic alloys

C. Humphreys, G. Botton, 1997 .

Microwave Dielectric Properties of Y2Ba(Cu1-xZnx)O5 Solid Solutions

C. Humphreys, H. Ogawa, H. Ohsato, 1998 .

Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN

C. Humphreys, M. Kappers, C. McAleese, 2004 .

Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire

Ferdinand Scholz, Colin J. Humphreys, Menno J. Kappers, 2015 .

Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

K. D. Vernon-Parry, Colin J. Humphreys, Menno J. Kappers, 2012 .

Stem Imaging of Crystals and Defects

C. Humphreys, 1979 .

Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials

C. Humphreys, G. S. Chen, 1999 .

Investigation of the proximity effect in amorphous AlF3 electron-beam resists

C. Humphreys, G. S. Chen, 1997 .

Dynamical Aspects of Electron Diffraction

C. Humphreys, 1977 .

Aspects of Bloch‐Wave Channeling in High‐Voltage Electron Microscopy

C. Humphreys, J. Lally, 1970 .

Some electron diffraction contrast effects at planar defects in crystals

C. Humphreys, A. Howie, G. Booker, 1967 .

Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si and MgO

C. Humphreys, T. J. Bullough, R. Devenish, 1989 .

Measuring the height of steps on MgO cubes using Fresnel contrast in a scanning transmission electron microscope

C. Boothroyd, C. Humphreys, 1993 .

Benefits of energy filtering for advanced convergent beam electron diffraction patterns

C. Humphreys, G. Botton, N. Zaluzec, 1994 .

Effect of growth temperature and V / III-ratio on the surface morphology of MOVPE-grown cubic zincblende

D. Wallis, C. Humphreys, R. Oliver, 2018 .

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

C. Humphreys, R. Muralidharan, P. Sen, 2020, Journal of Vacuum Science & Technology B.

Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy

C. Humphreys, R. Oliver, M. Kappers, 2007 .

Understanding x-ray diffraction of nonpolar gallium nitride films

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101 , 125421 (2020)]

C. Humphreys, O. Fenwick, D. Dunstan, 2021 .

Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy

C. Humphreys, H. Tatsuoka, Tsutomu Koga, 2001 .

High resolution dopant profiling in the SEM, image widths and surface band-bending

C. Humphreys, C. Rodenburg, K. Chee, 2008 .

A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations

R. F. Broom, Colin J. Humphreys, C. Humphreys, 2011 .

Evolution of InGaN/GaN nanostructures and wetting layers during annealing

C. Humphreys, R. Oliver, M. Kappers, 2005 .

High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures

C. Humphreys, 1987 .

The Symmetry of Three-Beam Scattering Equations: Inversion of Three-Beam Diffraction Patterns from Centrosymmetric Crystals

J. Etheridge, C. Humphreys, A. Moodie, 1996 .

The effect of Si on the growth mode of GaN

C. Humphreys, P. Bristowe, R. Oliver, 2006 .

Theory of Electron Scattering and Electron Diffraction

C. Humphreys, 2002 .

Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary

C. Humphreys, G. Botton, D. Pankhurst, 2001 .

CHANNELLING RADIATION IN ELECTRON MICROSCOPY.

J. Spence, C. Humphreys, 1984 .

The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaN

C. Humphreys, Nikhil Sharma, V. Keast, 2000 .

3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite?

C. Humphreys, D. Dunstan, F. Rodríguez, 2019, Physical review letters.

Controlling crystal growth

C. Humphreys, 1989, Nature.

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

C. Humphreys, F. Oehler, R. Oliver, 2013 .

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Sung-Jin Cho, Paul R. Chalker, Iain G. Thayne, 2016 .

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Duncan Watson-Parris, Colin J. Humphreys, Clifford McAleese, 2012 .

Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures

C. Humphreys, T. Trindade, S. Pereira, 2008 .

Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

R. A. Oliver, D. Watson-Parris, M. J. Kappers, 2010, 1006.1232.

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

C. Humphreys, F. Oehler, R. Oliver, 2016 .

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2007 .

Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

C. T. Foxon, C. Humphreys, S. Novikov, 2016 .

Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices.

Oka Kurniawan, Vincent K S Ong, Colin J Humphreys, 2007, Ultramicroscopy.

A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem

Erping Li, Oka Kurniawan, Chee Chin Tan, 2010, IEEE Transactions on Electron Devices.

Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source

C. T. Foxon, C. Humphreys, S. Novikov, 2016 .

Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC

K. Elgaid, B. Benakaprasad, A. Eblabla, 2016, 2016 46th European Microwave Conference (EuMC).

X‐ray topography of the coherency breakdown in GexSi1−x/Si(100)

B. Tanner, C. Humphreys, D. Eaglesham, 1988 .

Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs

Colin J. Humphreys, D. Shindo, Paul D. Brown, 1998 .

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Colin J. Humphreys, Clifford McAleese, Menno J. Kappers, 2007 .

Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]

C. Humphreys, R. Oliver, M. Kappers, 2011 .

The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy

C. Boothroyd, C. Humphreys, Y. Xin, 1995 .

An Initial Exploration of GaN Grown on a Ge-(111) Substrate

G. Borghs, C. Humphreys, R. Lieten, 2008 .

SCM and SIMS investigations of unintentional doping in III-nitrides

C. Humphreys, R. Oliver, T. Zhu, 2015 .

Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing.

Erdan Gu, Martin D. Dawson, Benoit Guilhabert, 2015, Optics express.

A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

C. Humphreys, J. Mullins, Dandan Zhu, 2006 .

Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

C. Humphreys, S. Raghavan, R. Muralidharan, 2017, IEEE Transactions on Electron Devices.

High-resolution electron microscopy observation of a1/2(112) superdislocation in TiAl

C. Humphreys, B. Inkson, 1995 .

Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films.

M. Knight, C. Humphreys, H. Yan, 2020, ACS nano.

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

C. Humphreys, A. Vinattieri, M. Meneghini, 2014 .

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

C. Humphreys, T. Badcock, R. Oliver, 2010 .

Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2012 .

Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures

Colin J. Humphreys, Clifford McAleese, Menno J. Kappers, 2009 .

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Bellotti, 2014 .

Time-resolved dynamics in single InGaN quantum dots

Y. Arakawa, C. Humphreys, G. Briggs, 2003 .

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence

C. Kranz, K. Thonke, C. Humphreys, 2016 .

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Wai Yuen Fu, Siyuan Zhang, Bertrand Rouet-Leduc, 2015, Nano letters.

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Colin J. Humphreys, Philip A. Shields, Duncan W. E. Allsopp, 2016 .

X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface

C. Humphreys, R. Oliver, M. Kappers, 2017 .

Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

C. Humphreys, R. Oliver, M. Kappers, 2007 .

The mean inner potential of GaN measured from nanowires using off-axis electron holography

C. Humphreys, G. Ho, T. Kasama, 2005 .

Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers

C. Humphreys, O. Fenwick, D. Dunstan, 2020 .

Detailed interpretation of electron transport in n-GaN

J. Harris, C. Humphreys, Z. Bougrioua, 2003 .

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Martin Kuball, Peter A. Houston, Michael J. Uren, 2015, IEEE Transactions on Electron Devices.

Observation of thermally activated conduction at a GaN–sapphire interface

J. Harris, C. Humphreys, N. Sharma, 2001 .

Perspectives on Electronic and Photonic Materials

C. Humphreys, T. Smeeton, 2017 .

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

M. Hopkins, C. Humphreys, D. Allsopp, 2017 .

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Sheng Jiang, Peter A. Houston, Ivor Guiney, 2015, Semiconductor Science and Technology.

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

K. B. Lee, D. Wallis, C. Humphreys, 2014 .

Effect of humidity on the interlayer interaction of bilayer graphene

C. Humphreys, D. Dunstan, Y. W. Sun, 2018, Physical Review B.

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers

C. Humphreys, Dandan Zhu, M. Kappers, 2010 .

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

C. Humphreys, F. Oehler, Dandan Zhu, 2013 .

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.

C. Humphreys, A. Tahraoui, R. Taylor, 2007, Physical Review Letters.

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

C. Humphreys, S. Schulz, R. Oliver, 2018, Journal of physics. Condensed matter : an Institute of Physics journal.

A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates

C. T. Foxon, C. Humphreys, D. Tricker, 1998 .

Nanomechanics of graphene oxide-bacteriophage based self-assembled porous composites

C. Humphreys, D. Dunstan, Yiwei Sun, 2020, Scientific Reports.

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

C. Humphreys, R. Oliver, M. Kappers, 2017 .

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

C. Humphreys, F. Oehler, R. Oliver, 2014 .

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

C. Humphreys, R. Martin, R. Oliver, 2014 .

Crytallography: Defects in reduced oxides

C. Humphreys, 1984, Nature.

The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s Crucifixion

C. Humphreys, 1992, Tyndale Bulletin.

Growth of low dislocation density GaN using transition metal nitride masking layers

C. Humphreys, Z. Barber, M. Kappers, 2007 .

Material optimisation for AlGaN/GaN HFET applications

I. Moerman, C. Humphreys, Nikhil Sharma, 2001 .

Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method

C. T. Foxon, C. Humphreys, Y. Xin, 1996 .

Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene

C. Humphreys, O. Fenwick, D. Dunstan, 2020, Physical Review B.

Analysis of InGaN-GaN quantum well chemistry and interfaces by transmission electron microscopy and X-ray scattering

C. Humphreys, J. Barnard, T. Smeeton, 2003 .

Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy

C. Humphreys, J. Barnard, M. E. Vickers, 2003 .

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

Pleun Maaskant, Brian Corbett, Liam Lewis, 2009 .

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

D. Kundys, C. Humphreys, S. Schulz, 2014 .

An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire

C. Humphreys, F. Oehler, T. Badcock, 2014 .

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

C. Humphreys, T. Badcock, R. Oliver, 2013 .

Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2009 .

Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures

C. Humphreys, R. Oliver, A. Cerezo, 2008 .

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

D. Kundys, C. Humphreys, S. Schulz, 2016, Science and technology of advanced materials.

Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

C. Humphreys, R. Hao, T. Badcock, 2012 .

The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates

C. Humphreys, R. Hao, T. Badcock, 2011 .

Electronic and optical properties of nonpolar a-plane GaN quantum wells

Eoin P. O'Reilly, Colin J. Humphreys, Menno J. Kappers, 2010 .

Optimizing GaN ( 112‾2 ) hetero‐epitaxial templates grown on ( 101‾0 ) sapphire

C. Humphreys, M. Pristovsek, Yisong Han, 2016 .

Microstructure and Strain-Free Lattice Parameters of ScGaN Films

C. Humphreys, P. Chalker, Z. Barber, 2005 .

Progress towards quantitative dopant profiling in the SEM

C. Humphreys, K. Chee, E. Bosch, 2010 .

Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope

C. Humphreys, C. Rodenburg, B. Kaestner, 2004, cond-mat/0408146.

THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL

C. Humphreys, 2000 .

The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI

C. Humphreys, 1998 .

Characterisation of defects in p-GaN by admittance spectroscopy

C. Humphreys, R. Airey, M. Kappers, 2012 .

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

M. Hopkins, C. Humphreys, R. Martin, 2015 .

Characterization of InGaN quantum wells with gross fluctuations in width

C. Humphreys, R. Oliver, M. Kappers, 2007 .

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.

J. Etheridge, C. Humphreys, P. Bagot, 2017, Ultramicroscopy.

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

B. Corbett, C. Humphreys, M. Kappers, 2016 .

GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor

C. Humphreys, J. Mullins, J. Barnard, 2002 .

The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

C. Humphreys, R. Oliver, M. Kappers, 2014 .

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal

J. D. Smith, C. Humphreys, G. Briggs, 2003 .

Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

C. Humphreys, N. Sharma, G. Yang, 2001 .

Chemical mapping of InGaN MQWs

I. Moerman, C. Humphreys, N. Sharma, 2001 .

Three methods for the growth of InGaN nanostructures by MOVPE

C. Humphreys, R. Oliver, M. Kappers, 2006 .

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy

G. Andrew D. Briggs, Colin J. Humphreys, Menno J. Kappers, 2004 .

A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy

T. Walther, C. Humphreys, D. Robbins, 1995 .

Exciton localization in InGaN/GaN single quantum well structures

C. Humphreys, M. J. Godfrey, J. Barnard, 2003 .

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

E. O’Reilly, C. Humphreys, S. Schulz, 2016 .

Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations

C. Humphreys, M. Kappers, J. Hollander, 2007 .

Growth and characterization of semi-polar (11-22) GaN with in-situ SiN x interlayers

C. Humphreys, M. Kappers, J. Hollander, 2006 .

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

C. Humphreys, S. Raghavan, R. Muralidharan, 2019, physica status solidi (a).

The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers

B. Tanner, C. Humphreys, D. Eaglesham, 1987 .

Dislocation Nucleation in GeSi/Si(100) Strained Epilayers

C. Humphreys, D. Eaglesham, J. Bean, 1988 .

A Model for Estimating the Stress Induced During Oxidation of Sharp Silicon Structures

C. Humphreys, C. J. Morgan, 1995 .

Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayer

C. Humphreys, Dandan Zhu, T. Zhu, 2010 .

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

T. Martin, D. Wallis, C. Humphreys, 2011 .

Single-step manufacturing process for the production of graphene-V/III LED heterostructures

Ivor Guiney, Simon Thomas, Colin J. Humphreys, 2017, OPTO.

Interface between graphene and silicon of various surface planes

C. Humphreys, O. Fenwick, D. Dunstan, 2020 .

The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells

J. Etheridge, C. Humphreys, P. Bagot, 2016 .

Transfer printed multi-color integrated devices for visible light communication applications

D. Wallis, M. Dawson, E. Gu, 2016 .

Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

C. T. Foxon, J. L. Hall, C. Humphreys, 2009, Journal of Crystal Growth.

3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite?

C. Humphreys, D. Dunstan, F. Rodríguez, 2019, Physical review letters.