D. Saha

Santanu Mahapatra, Dipankar Saha, Richa Chakravarty, 2018, 2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID).

Atomistic modeling of the metallic-to-semiconducting phase boundaries in monolayer MoS2

Santanu Mahapatra, Dipankar Saha, S. Mahapatra, 2016 .

GaN etch rate and surface roughness evolution in Cl2/Ar based inductively coupled plasma etching

B. K. Sehgal, V. R. Agarwal, A. Kapoor, 2012 .

Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs

N. S. Garigapati, D. Saha, S. Ganguly, 2018, IEEE Transactions on Electron Devices.

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

H. Osten, D. Saha, A. Laha, 2019, Applied Physics Letters.

Impact of distributed Bragg reflector on carrier and photon dynamics in GaN-based surface emitting diodes manifested by ultrafast transient absorption spectroscopy

D. Saha, S. Ganguly, Tarni Aggarwal, 2019, Japanese Journal of Applied Physics.

Analytical insight into the lattice thermal conductivity and heat capacity of monolayer MoS2

S. Mahapatra, D. Saha, 2016 .

Impact of Stone-Wales and lattice vacancy defects on the electro-thermal transport of the free standing structure of metallic ZGNR

S. Mahapatra, D. Saha, A. Sengupta, 2014 .

Scalability assessment of Group-IV mono-chalcogenide based tunnel FET

S. Mahapatra, D. Saha, Madhuchhanda Brahma, 2018, Scientific Reports.

Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires

D. Saha, S. Sankaranarayanan, D. Banerjee, 2015, 1503.02279.

Evidence of distributed energy border traps at Al2O3/p-diamond interface

D. Saha, S. Ganguly, B. Parvez, 2022, Diamond and related materials.

Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology

D. Saha, S. Ganguly, S. Surapaneni, 2021 .

Fringe field control of one‐dimensional room temperature sub‐band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires

D. Saha, S. Ganguly, Dolar Khachariya, 2017 .

Electrically injected InAs∕GaAs quantum dot spin laser operating at 200K

Zetian Mi, Dipankar Saha, Z. Mi, 2008 .

Optical polarization modulation and gain anisotropy in an electrically injected spin laser.

P. Bhattacharya, D. Saha, D. Basu, 2009, Physical review letters.

Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core–shell nanostructures

D. Saha, S. Ganguly, Tarni Aggarwal, 2019, Nanotechnology.

First-principles based simulations of electronic transmission in ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterointerfaces

S. Lodha, D. Saha, 2021, Scientific Reports.

State transitions and decoherence in the avian compass.

D. Saha, S. Ganguly, V. S. Poonia, 2014, Physical review. E, Statistical, nonlinear, and soft matter physics.

Efficient Wigner function simulation for nanowire MOSFETs and comparison to Quantum Drift-Diffusion

D. Saha, O. Badami, S. Ganguly, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

S. Ganguly, A. Kamath, D. Saha, 2012, IEEE Electron Device Letters.

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric

D. Saha, S. Ganguly, Y. Yadav, 2022, Physica Scripta.

The avian compass can be sensitive even without sustained electron spin coherence

D. Saha, S. Ganguly, V. S. Poonia, 2021, Proceedings of the Royal Society A.

Effects of Device Geometry on Output Circular Polarization in a Spin-LED

D. Saha, D. Banerjee, R. Adari, 2012, IEEE Transactions on Magnetics.

Epitaxially grown MnAs/GaAs lateral spin valves

P. Bhattacharya, D. Saha, M. Holub, 2006 .

Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates

D. Saha, S. Ganguly, S. Mukherjee, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure

D. Saha, A. Laha, J. Ghosh, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si(111) substrate by plasma assisted molecular beam epitaxy technique

D. Saha, A. Laha, S. Ganguly, 2015, Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT).

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

B. Chakraborty, A. Sood, S. Mahapatra, 2017, npj 2D Materials and Applications.

The Avian Compass can be Sensitive even without Sustained Quantum Coherence

D. Saha, S. Ganguly, K. Saha, 2017, 1712.04623.

Effect of Line Defects on the Electrical Transport Properties of Monolayer MoS $_{\bf 2}$ Sheet

S. Mahapatra, D. Saha, T. Niehaus, 2014, IEEE Transactions on Nanotechnology.

Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene

S. Mahapatra, D. Saha, S. Bhattacharya, 2014, 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).

Theoretical insights on the electro-thermal transport properties of monolayer MoS2 with line defects

S. Mahapatra, D. Saha, 2016 .

Loss Reduction in a Grid-Connected Photovoltaic System Operated with P-&-O Algorithm based MPPT Control by introducing Diamond MOSFET

Dipankar Saha, Apurba Laha, Swaroop Ganguly, 2021, 2021 International Symposium on Devices, Circuits and Systems (ISDCS).