M. Yoshikawa

发表

Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

S. Takahashi, S. Yuasa, K. Ando, 2008, 2008 IEEE International Electron Devices Meeting.

Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes

T. Daibou, M. Yoshikawa, E. Kitagawa, 2008, IEEE Transactions on Magnetics.

Edge domain dependent pinning effect by the stray field in the patterned magnetic tunnel junction

H. Hada, N. Shimomura, E. Kitagawa, 2005, INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..

Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry

Hitoshi Iwasaki, K. Koi, Masashi Sahashi, 2002 .

Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories

H. Hada, N. Ishiwata, T. Kai, 2006 .

4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

H. Kanaya, H. Oyamatsu, S.-W. Chung, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs

Hiroaki Yoda, Hiromitsu Hada, S. Tahara, 2005 .

Process Integration of Low-Power and High-Speed 16Mb MRAM using Multi-Layer Wiring Technology

S. Miura, Akihiro Nitayama, Hiroaki Yoda, 2006 .

Unified understanding of both thermally assisted and precessional spin-transfer switching in perpendicularly magnetized giant magnetoresistive nanopillars

Tadaomi Daibou, Shinji Miwa, Hiroaki Yoda, 2013 .

High-Speed Spin-Transfer Switching in GMR Nano-Pillars With Perpendicular Anisotropy

Y Suzuki, N. Shimomura, E. Kitagawa, 2011, IEEE Transactions on Magnetics.

Spin-RAM for Normally-Off Computer

S. Yuasa, A. Fukushima, Y. Nakatani, 2011, 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.