Y. Mitani

发表

Experimental study of channel doping concentration impacts on random telegraph signal noise and successful noise suppression by strain induced mobility enhancement

J. Chen, Y. Higashi, I. Hirano, 2013, 2013 Symposium on VLSI Technology.

Deep insight into process-induced pre-existing traps and PBTI stress-induced trap generations in high-k gate dielectrics through systematic RTN characterizations and ab initio calculations

Y. Mitani, Jiezhi Chen, Y. Nakasaki, 2016, 2016 IEEE Symposium on VLSI Technology.

Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies

Yuichiro Mitani, Jiezhi Chen, Yusuke Higashi, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory

H. Aochi, M. Fujiwara, Y. Mitani, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy

Y. Mitani, Li Zhang, 2006 .

Breakdown Voltage Prediction of Ultra-Thin Gate Insulator in Electrostatic Discharge (ESD) Based on Anode Hole Injection Model

J. Kurihara, K. Matsuzawa, M. Takayanagi, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system

Y. Higashi, Y. Mitani, Y. Nakasaki, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs

S. Kawanaka, I. Hirano, Y. Mitani, 2009, 2009 IEEE International Reliability Physics Symposium.

Direct observation of boron dopant fluctuation by site-specific scanning spreading resistance microscopy

K. Yamamoto, K. Suguro, J. Koga, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Reexamination of fluorine incorporation into SiO/sub 2/-significant improvement of charge-to-breakdown distribution tail

A. Toriumi, Y. Mitani, Y. Nakasaki, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

M. Takayanagi, K. Eguchi, I. Hirano, 2012 .

Dielectric properties of noncrystalline HfSiON

Y. Mitani, A. Nishiyama, Y. Kamata, 2006, cond-mat/0601503.

Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4

I. Hirano, Y. Mitani, Y. Nakasaki, 2009 .

O3+ cluster primary ion bombardment for secondary ion mass spectrometry

Y. Mitani, H. Yamazaki, 1997 .

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

Y. Mitani, Y. Kamimuta, H. Seki, 2018 .

Study of the SiO2/Si interface using spectroscopic ellipsometry and x-ray reflectometry

Y. Mitani, H. Satake, H. Itoh, 2002 .

Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB

Shosuke Fujii, Reika Ichihara, Marina Yamaguchi, 2019, IEEE Transactions on Electron Devices.

Random Telegraph Noise after Hot Carrier Injection in Tri-gate Nanowire Transistor

M. Saitoh, K. Ota, Y. Mitani, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Suppression of stress-induced leakage current after Fowler-Nordheim stressing by deuterium pyrogenic oxidation and deuterated poly-Si deposition

A. Toriumi, Y. Mitani, H. Satake, 2002 .

Extracting Physically Unclonable Function From Spin Transfer Switching Characteristics in Magnetic Tunnel Junctions

Takao Marukame, Yuichiro Mitani, Tetsufumi Tanamoto, 2014, IEEE Transactions on Magnetics.

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Masakazu Goto, Kikuo Yamabe, Yuichiro Mitani, 2013, Microelectron. Reliab..

Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs

T. Numata, Y. Oowaki, A. Toriumi, 2001, IEEE Electron Device Letters.

Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Kazuya Matsuzawa, Yuichiro Mitani, Tatsuya Ohguro, 2014, IEEE Transactions on Electron Devices.

Influence of Traps and Carriers on Reliability in HfSiON/ $\hbox{SiO}_{2}$ Stacks

Y. Mitani, I. Hirano, K. Sekine, 2009, IEEE Transactions on Device and Materials Reliability.

Evaluation of electron traps in SiNx by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS

Y. Mitani, Kazuhiko Yamamoto, H. Seki, 2018, Japanese Journal of Applied Physics.

Gate Electrode Effects On Dielectric Breakdown Of SiO 2

A. Toriumi, Y. Mitani, H. Satake, 1996 .

Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides

Akira Toriumi, Yuichiro Mitani, Yasushi Nakasaki, 2003 .

Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation

Harumi Seki, Yuichiro Mitani, Yasushi Nakasaki, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications

Y. Mitani, Y. Nakasaki, M. Koike, 2012 .

Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen

I. Hirano, Y. Mitani, Y. Nakasaki, 2011 .

10 nm bulk-planar SONOS-type memory with double tunnel junction and sub-10 nm scaling utilizing source to drain direct tunnel sub-threshold

S. Fujita, Y. Mitani, R. Ohba, 2008, 2008 IEEE International Electron Devices Meeting.

Oxide-Mediated Solid Phase Epitaxy (OMSPE) of Silicon: A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide

Y. Mitani, K. Miyano, I. Mizushima, 1999 .

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Mitsuhiro Tomita, Masamichi Suzuki, Kikuo Yamabe, 2017, Microelectron. Reliab..

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Yuichiro Mitani, Hideki Satake, Y. Mitani, 2008 .

Further investigations on traps stabilities in random telegraph signal noise and the application to a novel concept physical unclonable function (PUF) with robust reliabilities

Hiroki Noguchi, Yuichiro Mitani, Tetsufumi Tanamoto, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Thermochemical understanding of dielectric breakdown in HfSiON with current acceleration

T. Yamaguchi, I. Hirano, M. Takayanagi, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film

I. Hirano, Y. Mitani, Y. Nakasaki, 2010, 2010 IEEE International Reliability Physics Symposium.

A New Insight into the Breakdown Mechanism in Ultrathin Gate Oxides by Conductive Atomic Force Microscopy

Y. Mitani, L. Zhang, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

35 nm floating gate planar MOSFET memory using double junction tunneling

N. Sugiyama, S. Fujita, Y. Mitani, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Relationship between magnetoresistance and lattice uncertainty at the interface in sputtered Fe/Cr multilayer films

Y. Mitani, K. Takanashi, H. Fujimori, 1992 .