G. Kapila

发表

Impact of Sampling Rate on RTN Time Constant Extraction and Its Implications on Bias Dependence and Trap Spectroscopy

V. Reddy, G. Kapila, 2014, IEEE Transactions on Device and Materials Reliability.

A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles

K. Ahmed, S. Mahapatra, G. Kapila, 2008, 2008 IEEE International Electron Devices Meeting.

SMU Data Science Review SMU Data Science Review Machine Learning Approach to Stability Analysis of Machine Learning Approach to Stability Analysis of Semiconductor Memory Element Semiconductor Memory Element Machine Learning Approach to Stability Analysis of Semiconductor Memory Element

G. Kapila, Ravindra Thanniru, Nibhrat Lohia, 2022 .

Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

B. Kaczer, N. Collaert, A. Nackaerts, 2007, IEEE Electron Device Letters.

Design for degradation: CAD tools for managing transistor degradation mechanisms

Ananth Somayaji Goda, Gautam Kapila, G. Kapila, 2005, Sixth international symposium on quality electronic design (isqed'05).