D. Varghese

发表

On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?

K. Ahmed, M.A. Alam, S. Mahapatra, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation

S. Krishnan, M. Alam, D. Varghese, 2019, IEEE Transactions on Components, Packaging and Manufacturing Technology.

on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors

M. Alam, D. Varghese, P. Moens, 2010, IEEE Transactions on Electron Devices.

Critical analysis of short-term negative bias temperature instability measurements : Explaining the effect of time-zero delay for on-the-fly measurements

M. Alam, A. Islam, D. Varghese, 2007 .

Negative bias temperature instability in CMOS devices

Souvik Mahapatra, Dipankar Saha, D. Varghese, 2005 .

Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET

P. Ye, Y. Xuan, M. Alam, 2008, 2008 IEEE International Electron Devices Meeting.

Charge Pumping as a Monitor of off-State TDDB in Asymmetrically Stressed Transistors

M.A. Alam, D. Varghese, M. A. Alam, 2009, IEEE Electron Device Letters.

off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

H. Shichijo, H. Kufluoglu, D. Varghese, 2007, IEEE Transactions on Electron Devices.

Universality of Off-State Degradation in Drain Extended NMOS Transistors

M.A. Alam, V. Reddy, S. Krishnan, 2006, 2006 International Electron Devices Meeting.

Observation and Control of Hot Atom Damage in Ferroelectric Devices

S. Krishnan, M. Alam, D. Varghese, 2014, IEEE Transactions on Electron Devices.

Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents

A. Gnudi, G. Baccarani, S. Krishnan, 2018, IEEE Transactions on Dielectrics and Electrical Insulation.

A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates

M. Alam, A. Islam, D. Varghese, 2011 .

Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric Breakdown

M.A. Alam, V. Reddy, S. Krishnan, 2007, 2007 IEEE International Electron Devices Meeting.

Optimum filler geometry for suppression of moisture diffusion in molding compounds

Dhanoop Varghese, Srikanth Krishnan, Muhammad Ashraful Alam, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

The Role of Dielectric Heating and Effects of Ambient Humidity in the Electrical Breakdown of Polymer Dielectrics

Dhanoop Varghese, Srikanth Krishnan, Honglin Guo, 2015, IEEE Transactions on Device and Materials Reliability.

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture

Antonio Gnudi, D. Fabiani, S. Krishnan, 2018, Microelectron. Reliab..

A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure

D. Varghese, M.A. Alam, H. Shichijo, 2008, 2008 IEEE International Reliability Physics Symposium.

Energy driven modeling of OFF-state and sub-threshold degradation in scaled NMOS transistors

D. Varghese, V. Reddy, M. Nandakumar, 2014, 2014 IEEE International Reliability Physics Symposium.

Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

S. Mahapatra, H. Kufluoglu, D. Varghese, 2007, IEEE Transactions on Electron Devices.

A comprehensive model for PMOS NBTI degradation: Recent progress

D. Varghese, Haldun Kufluoglu, Muhammad Ashraful Alam, 2007, Microelectron. Reliab..

A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors

S. Krishnan, V. Reddy, M. Alam, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Super Single Pulse Charge Pumping Technique for Profiling Interfacial Defects

S. Krishnan, V. Reddy, M. Alam, 2021, IEEE Transactions on Electron Devices.

Device Design and Optimization Considerations for Bulk FinFETs

D. Varghese, V. Rao, D. Varghese, 2008, IEEE Transactions on Electron Devices.

OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review

D. Varghese, S. Krishnan, V. Reddy, 2014, Microelectron. Reliab..

Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A12O3 as Gate Dielectric

D. Antoniadis, M. Lundstrom, P. Ye, 2008, 2008 Device Research Conference.