N. Iwasa

发表

Thermal Annealing Effects on P-Type Mg-Doped GaN Films

S. Nakamura, T. Mukai, M. Senoh, 1992 .

Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

S. Nakamura, M. Senoh, N. Iwasa, 1996 .

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

S. Nakamura, M. Senoh, N. Iwasa, 1996 .

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

S. Nakamura, M. Senoh, N. Iwasa, 1995 .

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Takashi Mukai, Shuji Nakamura, S. Nagahama, 1995 .

Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

Characteristics of InGaN multi‐quantum‐well‐structure laser diodes

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

Shuji Nakamura, Toshio Matsushita, S. Nagahama, 1996 .

InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

Takashi Mukai, Shuji Nakamura, Shin-ichi Nagahama, 1993 .

High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

Shuji Nakamura, Shin-ichi Nagahama, Naruhito Iwasa, 1995 .

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1997 .

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1997 .

SUBBAND EMISSIONS OF INGAN MULTI-QUANTUM-WELL LASER DIODES UNDER ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1997 .

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Toshio Matsushita, S. Nagahama, 1997 .

CONTINUOUS-WAVE OPERATION OF INGAN/GAN/ALGAN-BASED LASER DIODES GROWN ON GAN SUBSTRATES

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Ring-opening polymerization of various cyclic esters by Al complex catalysts containing a series of phenoxy-imine ligands: Effect of the imino substituents for the catalytic activity

N. Iwasa, M. Fujiki, K. Nomura, 2008 .

Present status of InGaN/GaN/AlGaN-based laser diodes

S. Nakamura, M. Senoh, N. Iwasa, 1998 .

Synthesis of Al complexes containing phenoxy-imine ligands and their use as the catalyst precursors for efficient living ring-opening polymerisation of epsilon-caprolactone.

N. Iwasa, Jingyu Liu, K. Nomura, 2008, Dalton transactions.

Notable effect of imino substituent for the efficient ring-opening polymerization of ε-caprolactone initiated by Al complexes containing phenoxy-imine ligand of type, Me2Al(L) [L: O-2-tBu-6-(RNCH)C6H3; R: 2,6-iPr2C6H3, tBu, adamantyl, C6F5]

N. Iwasa, Jingyu Liu, K. Nomura, 2008 .

Notable Effect of Fluoro Substituents in the Imino Group in Ring-Opening Polymerization of ε-Caprolactone by Al Complexes Containing Phenoxyimine Ligands

N. Iwasa, S. Katao, M. Fujiki, 2009 .

Vinylidene to alkyne rearrangement to form polyynes: synthesis and photolysis of dialkynylmethylenebicyclo[4.3.1]deca-1,3,5-triene derivatives

N. Iwasa, Y. Tobe, M. Sonoda, 2001 .

Expanded radialenes with bicyclo[4.3.1]decatriene units: new precursors to cyclo[n]carbons.

N. Iwasa, Y. Tobe, M. Sonoda, 2003, Chemistry.

Ring-opening polymerization of various oxirane derivatives using organotin phosphate condensate; Selective synthesis of the polyether containing oxirane ring in the side chain

N. Iwasa, K. Miura, Yoshiro Furukawa, 2008 .

Hole Compensation Mechanism of P-Type GaN Films

Takashi Mukai, Shuji Nakamura, Naruhito Iwasa, 1992 .

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1997 .

InGaN/GaN/AlGaN-Based Leds and Laser Diodes

Takashi Mukai, Shuji Nakamura, S. Nagahama, 1998 .

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

Takashi Mukai, Masahiko Sano, Hiroaki Matsumura, 2000 .

Blue InGaN-based laser diodes with an emission wavelength of 450 nm

Takashi Mukai, Shuji Nakamura, Shin-ichi Nagahama, 2000 .

High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1997 .

Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

INGAN/GAN/ALGAN-BASED LASER DIODES WITH CLEAVED FACETS GROWN ON GAN SUBSTRATES

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K

S. Nakamura, M. Senoh, N. Iwasa, 1996 .

Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

GaN‐Based Light‐Emitting Diodes and Laser Diodes, and Their Recent Progress

Takashi Mukai, Masahiko Sano, Hiroaki Matsumura, 2001 .