K. Hiramatsu

K. Hiramatsu, N. Sawaki, M. Yamaguchi, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

Raman scattering study of the clustering phenomena in InGaAsP grown by LPE on (100) and (111) GaAs

K. Hiramatsu, N. Sawaki, N. Hase, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Crack‐free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer

K. Hiramatsu, K. Kawamura, H. Miyake, 2014 .

Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers

K. Hiramatsu, K. Kawamura, H. Miyake, 2014 .

High Quality GaN Grown by Facet‐Controlled ELO (FACELO) Technique

K. Hiramatsu, H. Miyake, J. Christen, 2002 .

Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method—effect of mask geometry

K. Hiramatsu, H. Miyake, K. Horibuchi, 2002 .

Fabrication and Optical Characterization of Facet‐Controlled ELO (FACELO) GaN by LP‐MOVPE

K. Hiramatsu, H. Miyake, M. Narukawa, 2001 .

Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask

K. Hiramatsu, A. Hoffmann, H. Miyake, 2000 .

Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates

K. Hiramatsu, K. Kawamura, H. Miyake, 2013 .

Field effect on thermal emission from the 0.40 eV electron level in InGaP

K. Hiramatsu, I. Akasaki, Xiaozhou Liu, 1993 .

Oxygen in InxGa1-xAsyP1-y Grown on GaAs

K. Hiramatsu, I. Akasaki, N. Sawaki, 1992 .

Growth control of carbon nanotubes by plasma-enhanced chemical vapor deposition and reactive ion etching

Y. Saito, K. Hiramatsu, Hideki Sato, 2006 .

Growth characteristics of carbon nanotubes on nanotip-formed substrate

Y. Saito, K. Hiramatsu, Hideki Sato, 2006 .

Blue emission from InGaN/GaN hexagonal pyramid structures

K. Hiramatsu, H. Miyake, Keisuke Nakao, 2007 .

Gain Spectroscopy of HVPE-Grown GaN

K. Hiramatsu, T. Detchprohm, A. Hoffmann, 1997 .

Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy

K. Hiramatsu, H. Miyake, Ryosuke Yoshizawa, 2017 .

Growth of Single Crystal AlxGa1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, K. Hirosawa, Nobuhiko Sawaki Akasaki, 1993 .

Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE

K. Hiramatsu, Dabing Li, Jiejun Wu, 2009 .

Improved surface morphology of flow‐modulated MOVPE grown AlN on sapphire using thin medium‐temperature AlN buffer layer

K. Hiramatsu, Dabing Li, H. Miyake, 2008 .

Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer

K. Hiramatsu, Dabing Li, H. Miyake, 2007 .

Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells

K. Hiramatsu, H. Miyake, S. Kurai, 2018 .

Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes

T. Egawa, K. Hiramatsu, Jiejun Wu, 2009 .

Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells

K. Hiramatsu, H. Miyake, Y. Yamada, 2017 .

Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams

A. Uedono, K. Hiramatsu, S. Ishibashi, 2012 .

Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures

K. Hiramatsu, A. Motogaito, Ryoga Tanaka, 2021, Journal of the European Optical Society-Rapid Publications.

Study of Plant Cultivation Using a Light-Emitting Diode Illumination System to Control the Spectral Irradiance Distribution

K. Hiramatsu, A. Motogaito, Naoki Hashimoto, 2017 .

Influence of growth conditions on al incorporation to AlxGa1- xN (x>0.4) grown by MOVPE

K. Hiramatsu, Dabing Li, H. Miyake, 2007 .

Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells

K. Hiramatsu, Dabing Li, H. Miyake, 2007 .

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

K. Hiramatsu, H. Miyake, Osamu Eryu, 2012 .

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, H. Miyake, H. Yoshida, 2011 .

Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates

K. Hiramatsu, N. Sawaki, M. Yamaguchi, 2001 .

Local Strain Distribution in AlN Thick Films Analyzed by X-Ray Microdiffraction

K. Hiramatsu, S. Kimura, S. Takeuchi, 2014 .

Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular‐striped AlN/sapphire template

K. Hiramatsu, S. Takeuchi, H. Miyake, 2014 .

High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

K. Hiramatsu, H. Miyake, S. Kitagawa, 2014 .

Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template

K. Hiramatsu, J. Kikkawa, O. Sakata, 2013 .

Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template

K. Hiramatsu, H. Miyake, Shibo Yang, 2013 .

Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films

K. Hiramatsu, H. Harima, H. Miyake, 2011 .

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

K. Hiramatsu, H. Miyake, Hideaki Murotani, 2017 .

High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

K. Hiramatsu, H. Miyake, A. Motogaito, 2003 .

Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

H. Amano, K. Hiramatsu, I. Akasaki, 1991 .

Influence of Si doping on the optical and structural properties of InGaN films

K. Hiramatsu, Dabing Li, H. Miyake, 2006 .

Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence

K. Hiramatsu, F. Bertram, J. Christen, 1999 .

Vertical strain and doping gradients in thick GaN layers

C. Thomsen, K. Hiramatsu, J. Christen, 1997 .

Excitation‐dependent carrier dynamics in Al‐rich AlGaN layers and multiple quantum wells

K. Jarašiūnas, K. Hiramatsu, B. Gil, 2015 .

Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire

K. Hiramatsu, Dabing Li, Weiguo Hu, 2009 .

Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy

K. Hiramatsu, S. Chichibu, H. Miyake, 2015 .

Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1−xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy

K. Hiramatsu, S. Chichibu, H. Miyake, 2015, 2015 15th International Workshop on Junction Technology (IWJT).

in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors

K. Hiramatsu, 1999 .

Preparation of AlxGa1-xN/GaN heterostructure by MOVPE

H. Amano, K. Hiramatsu, I. Akasaki, 1990 .

Transient photoluminescence of aluminum‐rich (Al,Ga)N low‐dimensional structures

K. Hiramatsu, P. Lefebvre, P. Valvin, 2014 .

Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states

K. Hiramatsu, Hironori Sakamoto, K. Takeuchi, 2016 .

High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate

K. Hiramatsu, H. Katsukawa, O. Oda, 2003 .

Deep center scattering potential in InGaP

K. Hiramatsu, I. Akasaki, Xiaozhou Liu, 1994 .

HVPE homoepitaxy on freestanding AlN substrate with trench pattern

K. Hiramatsu, Yoshinobu Watanabe, H. Miyake, 2015 .

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

Kentaro Furusawa, Hideto Miyake, K. Hazu, 2013 .

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1989 .

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1993 .

Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates

K. Hiramatsu, H. Harima, H. Miyake, 2012 .

Growth of undoped and Zn-doped GaN nanowires

K. Hiramatsu, H. Miyake, M. Narukawa, 2009 .

H. Amano, M. Kito, K. Hiramatsu, 1988 .

Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

Theeradetch Detchprohm, Isamu Akasaki, Kenji Itoh, 1992 .

Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, N. Sawaki, H. Miyake, 1998 .

Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants — With results for AlN optical constants

K. Hiramatsu, Takeyasu Saito, K. Ozaki, 2014 .

Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV region

K. Hiramatsu, K. Fukui, K. Ohta, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Characterization of GaN Based UV‐VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation

Kazuyuki Tadatomo, Kazumasa Hiramatsu, Kazutoshi Fukui, 2001 .

Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

K. Hiramatsu, A. Motogaito, K. Tadatomo, 2001 .

The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization

R. Davis, K. Hiramatsu, T. Zheleva, 1997 .

Deep levels in the upper band-gap region of lightly Mg-doped GaN

Theeradetch Detchprohm, Peter Hacke, Kazumasa Hiramatsu, 1996 .

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Kazumasa Hiramatsu, Nobuhiko Sawaki, Qin-Sheng Zhu, 2000 .

Fundamental Properties of Wide Bandgap Semiconductors

I. Suemune, H. Amano, K. Hiramatsu, 2007 .

Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate

K. R. Jamaludin, K. Hiramatsu, M. Mitsuhara, 2016 .

Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition

K. Hiramatsu, Hideki Sato, H. Miyake, 2012 .

Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model

Hiromoto Susawa, Toshihiro Tsuji, Kazumasa Hiramatsu, 2007 .

Simulation of InGaP Liquid Phase Epitaxy Including Convection

T. Jimbo, K. Hiramatsu, T. Tsuji, 2006 .

Growth of InGaP epitaxial layers by liquid phase electro-epitaxy

K. Hiramatsu, I. Akasaki, Shigeyasu Tanaka, 1991 .

Growth and characterization of InGaAs bulk crystals grown by liquid phase electro-epitaxy

K. Hiramatsu, I. Akasaki, Shigeyasu Tanaka, 1993 .

Effects of buffer layers and advanced technologies on heteroepitaxy of GaN

K. Hiramatsu, 2001 .

A verification of immiscibility in InGaAsP quaternary alloys

K. Hiramatsu, I. Akasaki, Shigeyasu Tanaka, 1988 .

Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers

K. Hiramatsu, I. Akasaki, Shigeyasu Tanaka, 1988 .

The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility

K. Hiramatsu, I. Akasaki, N. Sawaki, 1986 .

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3

H. Amano, K. Hiramatsu, I. Akasaki, 1990 .

Distribution of Horizontal Dislocations in ELO-GaN

K. Hiramatsu, H. Miyake, K. Horibuchi, 2002 .

Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System

K. Hiramatsu, I. Akasaki, N. Sawaki, 1985 .

Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis

K. Hiramatsu, I. Akasaki, N. Sawaki, 1985 .

LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs

K. Hiramatsu, I. Akasaki, N. Sawaki, 1984 .

Deep levels in InxGa1-xAsyP1-y grown on (100) GaAs by LPE

K. Hiramatsu, I. Akasaki, N. Sawaki, 1989 .

Raman scattering study of to phonon modes in InGaAsP/GaAs

K. Hiramatsu, N. Sawaki, N. Hase, 1994 .

Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves

K. Hiramatsu, N. Sawaki, H. Miyake, 1999 .

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 1992 .

Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

K. Hiramatsu, N. Sawaki, Shota Kitamura, 1994 .

Time-resolved nonlinear luminescence of excitonic transitions in GaN

T. Taguchi, K. Hiramatsu, H. Miyake, 2004 .

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer

K. Hiramatsu, H. Miyake, Kazuki Ikeda, 2018 .

Binding energy of localized biexcitons in AlGaN-based quantum wells

K. Hiramatsu, H. Miyake, Y. Yamada, 2013 .

Huge binding energy of localized biexcitons in Al-rich AlxGa1―xN ternary alloys

K. Hiramatsu, H. Miyake, H. Muto, 2011 .

Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media

K. Hiramatsu, H. Miyake, A. Motogaito, 2015 .

Photoluminescence of residual transition metal impurities in GaN

H. Amano, K. Hiramatsu, I. Akasaki, 1995 .

Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, N. Sawaki, H. Miyake, 2000 .

GaN-based Schottky barrier photodetectors from near ultraviolet to vacuum ultraviolet (360-50 nm)

K. Hiramatsu, A. Motogaito, 2003 .

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

Hiroyuki Fukuyama, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

Hideaki Murotani, Hideto Miyake, Kazumasa Hiramatsu, 2012 .

Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets

K. Hiramatsu, N. Sawaki, M. Shimizu, 1994 .

Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, N. Sawaki, M. Yamaguchi, 1998 .

New dopant precursors for n-type and p-type GaN

K. Hiramatsu, N. Sawaki, K. Tadatomo, 1997 .

Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)

K. Hiramatsu, K. Kawamura, H. Miyake, 2010 .

Epitaxial lateral overgrowth of GaN on selected-area Si(1 1 1) substrate with nitrided Si mask

K. Hiramatsu, H. Miyake, M. Narukawa, 2003 .

Defect structure in selective area growth GaN pyramid on (111)Si substrate

Kazumasa Hiramatsu, Nobuhiko Sawaki, Michio Hibino, 2000 .

Analysis of deep levels in n‐type GaN by transient capacitance methods

Theeradetch Detchprohm, Peter Hacke, Kazuyuki Tadatomo, 1994 .

Selective Area Growth of GaN on Stripe‐Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, N. Sawaki, Y. Honda, 1999 .

Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

K. Hiramatsu, N. Sawaki, Y. Kawaguchi, 1998 .

Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

H. Amano, K. Hiramatsu, I. Akasaki, 1994 .

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

K. Hiramatsu, N. Sawaki, T. Shibata, 1999 .

TEM analysis of threading dislocations in ELO-GaN grown with controlled facet planes

K. Hiramatsu, H. Miyake, K. Horibuchi, 2000 .

Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE

K. Hiramatsu, Jiejun Wu, H. Miyake, 2009 .

Behavior of Threading Dislocations in SAG‐GaN Grown by MOVPE

K. Hiramatsu, N. Sawaki, K. Horibuchi, 2000 .

Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

T. Hashizume, K. Hiramatsu, K. Sugawara, 2010 .

Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

K. Hiramatsu, I. Akasaki, H. Amano, 1991 .

Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy

K. Hiramatsu, Weiguo Hu, H. Miyake, 2009 .

Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth

K. Hiramatsu, H. Miyake, Y. Iyechika, 2001 .

Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN

K. Hiramatsu, H. Miyake, Chia-Hung Lin, 2016 .

Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition

K. Hiramatsu, N. Sawaki, Y. Kawaguchi, 2003 .

Optical characterisation of GaN and related materials

J. Bergman, H. Amano, K. Hiramatsu, 1997 .

Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy

Theeradetch Detchprohm, Isamu Akasaki, Kazumasa Hiramatsu, 1993 .

Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films

Jung Gon Kim, K. Hiramatsu, H. Harima, 2011 .

In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy

T. Egawa, K. Hiramatsu, Jiejun Wu, 2010 .

a ‐plane AlN and AlGaN growth on r ‐plane sapphire by MOVPE

K. Hiramatsu, H. Miyake, Reina Miyagawa, 2010 .

Effects of initial conditions and growth temperature on the properties of nonpolar a ‐plane AlN grown by LP‐HVPE

K. Hiramatsu, Dabing Li, Jiejun Wu, 2009 .

Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film

K. Hiramatsu, Dabing Li, H. Miyake, 2007 .

Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure

K. Hiramatsu, H. Miyake, A. Motogaito, 2017 .

Detecting High-refractive-index (n>1.5) Media using Surface Plasmon Sensor with One-dimensional Au Diffraction Grating on Glass Substrate

K. Hiramatsu, H. Miyake, A. Motogaito, 2016 .

Detecting High-Refractive-Index Media Using Surface Plasmon Sensor with One-Dimensional Metal Diffraction Grating

K. Hiramatsu, H. Miyake, A. Motogaito, 2016 .

Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application

Hideto Miyake, Atsushi Motogaito, Masanori Kito, 2015, SPIE Micro + Nano Materials, Devices, and Applications.

Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer

K. Hiramatsu, H. Miyake, A. Motogaito, 2015, Plasmonics.

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN

K. Hiramatsu, A. Hoffmann, N. Sawaki, 2000 .

Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN

K. Hiramatsu, N. Sawaki, J. Christen, 1999 .

Spatially resolved investigations of the excitonic luminescence in GaN

C. Thomsen, K. Hiramatsu, J. Christen, 1997 .

Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

Hiroyuki Fukuyama, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

A study on barrier height of AuAlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20

K. Hiramatsu, N. Sawaki, T. Detchprohm, 1997 .

Epitaxial lateral overgrowth techniques used in group III nitride epitaxy

K. Hiramatsu, 2001 .

The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

R. Davis, K. Hiramatsu, T. Zheleva, 1998 .

HVPE growth of AlN on trench- patterned 6H-SiC substrates

K. Hiramatsu, H. Miyake, T. Nomura, 2011 .

LPE growth of InGaP/InGaAsP multiple thin layers on (111)A GaAs substrates

K. Hiramatsu, I. Akasaki, H. Takamatsu, 1989 .

Conductivity measurements on GaN grown by OMVPE and HVPE

H. Amano, K. Hiramatsu, I. Akasaki, 1995 .

Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN

H. Amano, K. Hiramatsu, I. Akasaki, 1991 .

TEM analysis of threading dislocations in crack‐free AlxGa1−xN grown on an AlN(0001) template

K. Hiramatsu, H. Miyake, T. Shibata, 2003 .

Selective dynamical study of luminescences near the surface and the interface of epitaxial GaN

H. Amano, K. Hiramatsu, I. Akasaki, 1995 .

Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates

K. Hiramatsu, K. Kawamura, H. Miyake, 2012 .

Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

K. Hiramatsu, H. Miyake, T. Onishi, 2004 .

The Relationship between the Bending Direction and Burgers Vector of Threading Dislocations at a Coherent Heterointerface in AlGaN/AlN Layers

K. Hiramatsu, H. Miyake, T. Shibata, 2007 .

Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

H. Amano, K. Hiramatsu, I. Akasaki, 2011 .

Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

H. Amano, K. Hiramatsu, I. Akasaki, 1990 .

Field Emission from GaN Self-Organized Nanotips

K. Hiramatsu, H. Miyake, H. Yoshida, 2002 .

HVPE growth of thick AlN on trench‐patterned substrate

K. Hiramatsu, H. Hirayama, H. Miyake, 2011 .

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

H. Amano, K. Hiramatsu, I. Akasaki, 1988 .

Selective Area Growth of III-Nitride and Their Application for Emitting Devices

K. Hiramatsu, Dabing Li, H. Miyake, 2008 .

Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

K. Hiramatsu, I. Akasaki, N. Sawaki, 1999 .

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask

K. Hiramatsu, N. Sawaki, H. Miyake, 1998 .

The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

K. Hiramatsu, N. Sawaki, M. Shimizu, 1996 .

Lattice-Mismatch-Induced Deep Level in InxGa1-xAsyP1-y (0≦y≦0.41) Grown on (100) GaAs

K. Hiramatsu, I. Akasaki, Qinsheng Zhu, 1989 .

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

C. Thomsen, K. Hiramatsu, N. Sawaki, 2000 .

Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets

Hideto Miyake, Kazumasa Hiramatsu, Takayoshi Maeda, 2004 .

Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy

K. Hiramatsu, H. Okushi, P. Hacke, 1996 .

Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs

K. Hiramatsu, I. Akasaki, Qinsheng Zhu, 1988 .

Selective Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen Ambient

K. Hiramatsu, N. Sawaki, H. Matsushima, 1997 .

Epitaxial lateral overgrowth of GaN structures : spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Andreas Hoffmann, Juergen Christen, Frank Bertram, 1999 .

Carrier-gas dependence of ELO GaN grown by hydride VPE

K. Hiramatsu, M. Fukui, H. Miyake, 2002 .

Growth of high‐quality GaN on FACELO substrate by raised‐pressure HVPE

K. Hiramatsu, K. Yoshikawa, H. Miyake, 2003 .

Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE

K. Hiramatsu, Yuta Takagi, H. Miyake, 2012 .

Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy

K. Hiramatsu, Jiejun Wu, H. Miyake, 2009 .

High temperature growth of AlN film by LP-HVPE

K. Hiramatsu, H. Miyake, Yuhuai Liu, 2007 .

Dependence of In mole fraction in InGaN on GaN facets

K. Hiramatsu, Dabing Li, H. Miyake, 2007 .

Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE

K. Hiramatsu, H. Miyake, Reina Miyagawa, 2009 .

Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy

K. Hiramatsu, H. Miyake, Yuhuai Liu, 2006 .

In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN

K. Hiramatsu, Dabing Li, Weiguo Hu, 2009 .

Determination of Al molar fraction in AlxGa1-xN films by Raman scattering

Jung Gon Kim, K. Hiramatsu, H. Harima, 2011 .

Simulation of Liquid Phase Epitaxy considering two dimensional flow

T. Jimbo, K. Hiramatsu, T. Soga, 2006 .

Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma

K. Hiramatsu, H. Miyake, H. Yoshida, 2002 .

Optical properties of MOVPE-grown a-plane GaN and AlGaN

K. Hiramatsu, H. Miyake, M. Narukawa, 2009 .

Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE

K. Hiramatsu, H. Miyake, M. Narukawa, 2008 .

Self-organized GaN nanotips for cold cathode application

K. Hiramatsu, H. Miyake, Y. Terada, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Antireflection structure of self-organized GaN nanotips

H. Miyake, K. Hiramatsu, H. Miyake, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Enhanced emission efficiency of InGaN films with Si doping

K. Hiramatsu, Dabing Li, H. Miyake, 2006 .

Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

K. Hiramatsu, Dabing Li, Weiguo Hu, 2009 .

Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE

K. Hiramatsu, I. Akasaki, Qinsheng Zhu, 1989 .

Characterization of high-quality epitaxial AlN films grown by MOVPE

K. Hiramatsu, O. Oda, H. Miyake, 2001 .

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

K. Hiramatsu, H. Miyake, S. Kurai, 2016 .

Analysis of Disorder Scattering in Ga0.47In0.53As Using Gaussian Potential

K. Hiramatsu, T. Nishinaga, 1983 .