N. Yang

A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides

J. Wortman, N. Yang, W. Henson, 2000 .

Analysis of tunneling currents and reliability of NMOSFETs with sub-2 nm gate oxides

J. Wortman, N. Yang, W. Henson, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

J. Wortman, J. Hauser, N. Yang, 1999 .

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

Stefan Kubicek, K. De Meyer, Eric M. Vogel, 2000 .

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides

J. Wortman, J. Hauser, N. Yang, 2000 .

Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's

J. Wortman, N. Yang, W. Henson, 1999, IEEE Electron Device Letters.

High-κ perovskite membranes as insulators for two-dimensional transistors

N. Yang, Danyang Wang, K. Kalantar-zadeh, 2022, Nature.

A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs

Nian Yang, Jimmie J. Wortman, J. Wortman, 2001, Microelectron. Reliab..

Study of low-frequency charge pumping on thin stacked dielectrics

E. Vogel, J. Wortman, V. Misra, 2001 .