A. Callegari

发表

Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage

H. Nayfeh, M. Ieong, J. Kedzierski, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic Ratio

A. Kellock, V. Narayanan, J. Bruley, 2011, IEEE Electron Device Letters.

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

M. Ieong, E. Cartier, V. Narayanan, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

C. Cabral, V. Narayanan, S. Zafar, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Charge trapping in high k gate dielectric stacks

M. Fischetti, E. Gusev, S. Zafar, 2002, Digest. International Electron Devices Meeting,.

80 nm poly':'silicon gated n-FETs with ultra-thin Ah03 gate dielectric for ULSI applications

Kevin K. H. Chan, E. Cartier, A. Ajmera, 2000 .

Ultrathin high-K gate stacks for advanced CMOS devices

L. Ragnarsson, E. Cartier, E. Gusev, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Factors Affecting Metal/Polymer Interface Durability in Microelectronics Packaging: Chemistry and Water Uptake

S. Purushothaman, A. Callegari, B. Furman, 1993 .

Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks

Massimo V. Fischetti, Alessandro C. Callegari, Evgeni P. Gusev, 2003 .

Interface engineering for enhanced electron mobilities in W/HfO/sub 2/ gate stacks

A. Curioni, V. Narayanan, R. Jammy, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Effect of interface states on the electrical properties of W, WSix, and WAlx Schottky contacts on GaAs

A. Callegari, E. E. Latta, N. Braslau, 1987 .

Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs

Alessandro C. Callegari, Masanori Murakami, A. Callegari, 1987 .

Microstructure studies of AuNiGe Ohmic contacts to n‐type GaAs

A. Callegari, M. Murakami, J. Baker, 1986 .

Submicron niobium tunnel junctions with reactive ion beam oxidation

B. Hunt, R. Buhrman, C. Rogers, 1981, IEEE Transactions on Magnetics.

Organic transistors with low operating voltage and high mobility

C. Dimitrakopoulos, S. Purushothaman, A. Callegari, 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).

Schottky diodes on hydrogen plasma treated n‐GaAs surfaces

A. Paccagnella, A. Callegari, E. E. Latta, 1989 .

Temperature dependence of microwave SQUID response

A. Callegari, B. Deaver, 1977 .

Lithographic evaluation of a DUV carbon attenuated phase shift mask

David S. O'Grady, S. Purushothaman, A. Wong, 1998 .

Ta/polyimide adhesion durability

S. Purushothaman, A. Callegari, B. Furman, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs

A. Paccagnella, D. Buchanan, A. Callegari, 1991 .

Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

D. Buchanan, A. Callegari, D. Lacey, 1989 .

Microwave mixing with niobium variable thickness bridges

R. Mattauch, A. Callegari, B. Deaver, 1977 .

Improved process for high‐Tc superconducting step‐edge junctions

W. Gallagher, Jonathan Z. Sun, A. Callegari, 1993 .

Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs

S. Tiwari, A. Callegari, J. Hintzman, 1987 .

A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors

C. Cabral, R. Amos, S. Zafar, 2002 .

WNx Schottky diodes on plasma treated GaAs

A. Paccagnella, A. Callegari, M. Murakami, 1991 .

GaAs surface plasma treatments for Schottky contacts

A. Paccagnella, A. Callegari, 1991 .

WN/sub x/ diodes on plasma-treated GaAs surfaces

A. Paccagnella, A. Callegari, H. Hovel, 1989 .

Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs

A. Callegari, H. Hovel, M. Murakami, 1988 .

WSi0.11 Schottky gates for GaAs metal semiconductor field‐effect transistors

J. Magerlein, A. Callegari, G. D. Spiers, 1987 .

Recent Progress of Alloyed Ohmic Contacts to GaAs Compound Semiconductors

N. Lustig, A. Callegari, M. Murakami, 1992 .

Electrical and thermal stability of AuGeNi ohmic contacts to GaAs fabricated with in situ RF sputter cleaning

A. Callegari, D. Lacey, E. Pan, 1986 .

Uniform and thermally stable AuGeNi ohmic contacts to GaAs

Alessandro C. Callegari, Masanori Murakami, A. Callegari, 1985 .

Characterization of GaAs self‐aligned refractory‐gate metal‐semiconductor field‐effect transistor (MESFET) integrated circuits

David J. Webb, Andrew T. S. Pomerene, J. H. Magerlein, 1987 .

Effective acceptor profiles in chemically and plasma treated WN/sub x//GaAs Shannon contacts from capacitance and current measurements

A. Paccagnella, A. Callegari, P. Bagnoli, 1991 .

Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

Eduard A. Cartier, Alessandro C. Callegari, E. Cartier, 2001 .

Metal–GaAs interaction and contact degradation in microwave MESFETs

Alessandro Paccagnella, Hans L. Hartnagel, Enrico Zanoni, 1990 .

80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications

A. Mocuta, R. Arndt, A. Ajmera, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

A GaAs MESFET IC for optical multiprocessor networks

C. J. Anderson, Dennis L. Rogers, J. D. Crow, 1989 .

Practical DC SQUIDs with extremely low 1/f noise

Mark B. Ketchen, A. W. Kleinsasser, Claudia D. Tesche, 1985 .

Ion beam alignment for liquid crystal display fabrication

James P. Doyle, Hiroki Nakano, Hiroyuki Satoh, 2003 .

Thermal stability and electrical properties of hydrogenated amorphous carbon film

N. Lustig, D. Buchanan, A. Callegari, 1994 .

Properties and thermal stability of the SiO2/GaAs interface with different surface treatments

A. Paccagnella, A. Callegari, D. Lacey, 1990 .

Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

D. Webb, R. Germann, G. Shahidi, 2008 .

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

C. Dimitrakopoulos, S. Purushothaman, A. Callegari, 1999, Science.

Studies of GaAs–oxide interfaces with and without Si interlayer

Alessandro Paccagnella, S. L. Wright, Thomas N. Jackson, 1990 .

Materials and Process Integration Issues in Metal Gate/High-k Stacks and Their Dependence on Device Performance

V. Narayanan, S. Zafar, K. Babich, 2007 .

Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy

Takashi Ando, Alessandro C. Callegari, Andrew J. Kellock, 2010 .

Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process

T. Ando, V. Narayanan, A. Kerber, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond

E. Cartier, V. Narayanan, J. Bruley, 2006, 2009 Symposium on VLSI Technology.

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction

David J. Webb, Jean-Pierre Locquet, A. Dimoulas, 2007 .