G. Yee

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Masahide Matsumoto, Hirofumi Inoue, Takeshi Yamaguchi, 2014, IEEE Journal of Solid-State Circuits.

A third-generation SPARC V9 64-b microprocessor

E. You, Chin Kim, C. Amir, 2000, IEEE Journal of Solid-State Circuits.