Min-Sang Kim

High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability

B. Ryu, Sung Hwan Kim, Donggun Park, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap

Jun‐Bo Yoon, Donggun Park, Sung-min Kim, 2008 .

NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

Donggun Park, S. Lee, Sung-min Kim, 2007, 2007 International Semiconductor Device Research Symposium.

Gate-all-around single silicon nanowire MOSFET with 7 nm width for SONOS NAND flash memory

Donggun Park, Jun Seo, Keun Hwi Cho, 2008, 2008 Symposium on VLSI Technology.

Sub 30 nm multi-bridge-channel MOSFET (MBCFET) with metal gate electrode for ultra high performance application

Chang Woo Oh, Sung Hwan Kim, Donggun Park, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design Rule

Kinam Kim, Ju-Yong Lee, Min-Sang Kim, 2002 .