K. Cho

发表

Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires

B. Ryu, D. Hwang, Donggun Park, 2006, 2006 International Electron Devices Meeting.

Investigation of nanowire size dependency on TSNWFET

Donggun Park, S. Suk, Ming Li, 2007, 2007 IEEE International Electron Devices Meeting.

Preloaded freeplay wide-bandwidth low-frequency piezoelectric harvesters

S. Priya, J. Heo, M. Hajj, 2015 .

Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap

Jun‐Bo Yoon, Donggun Park, Sung-min Kim, 2008 .

NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

Donggun Park, S. Lee, Sung-min Kim, 2007, 2007 International Semiconductor Device Research Symposium.

Gate-all-around single silicon nanowire MOSFET with 7 nm width for SONOS NAND flash memory

Donggun Park, Jun Seo, Keun Hwi Cho, 2008, 2008 Symposium on VLSI Technology.

Interface Trap Density of Gate-All-Around Silicon Nanowire Field-Effect Transistors With TiN Gate: Extraction and Compact Model

K. Yeo, Dong-Won Kim, K. Cho, 2013, IEEE Transactions on Electron Devices.

Analysis of gate-induced drain leakage characteristics and threshold voltage modulation of plasma-doped FinFETs for low-power applications

Dong-Won Kim, K. Cho, Ji-myoung Lee, 2016 .

Fabrication of single electron transistors with molecular tunnel barriers using ac dielectrophoresis technique

Keun Hwi Cho, Dong June Ahn, H. K. Kim, 2006 .

Experimental Investigation on Superior PMOS Performance of Uniaxial Strained ≪110≫ Silicon Nanowire Channel By Embedded SiGe Source/Drain

Donggun Park, Keun Hwi Cho, Kyoung Hwan Yeo, 2007, 2007 IEEE International Electron Devices Meeting.

Extracting Mobility Degradation and Total Series Resistance of Cylindrical Gate-All-Around Silicon Nanowire Field-Effect Transistors

G. Jin, J. Rieh, K. Yeo, 2009, IEEE Electron Device Letters.

Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate-All-Around PMOS Silicon Nanowire Field-Effect-Transistors

Dong-Won Kim, Donggun Park, Sungwoo Hwang, 2011 .

Observation of Single Electron Tunneling and Ballistic Transport in Twin Silicon Nanowire MOSFETs (TSNWFETs) Fabricated by Top-Down CMOS Process

B. Ryu, Donggun Park, S. Suk, 2006, 2006 International Electron Devices Meeting.

Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs)

Donggun Park, Sung Woo Hwang, Keun Hwi Cho, 2007, IEEE Electron Device Letters.

24.3 A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an Adaptive Cell-Power Assist Circuit

Hakchul Jung, Woojin Rim, Jongwook Kye, 2021, 2021 IEEE International Solid- State Circuits Conference (ISSCC).

High performance twin silicon nanowire MOSFET(TSNWFET) on bulk si wafer

Sung Min Kim, Chang Woo Oh, Sung Hwan Kim, 2008, 2006 IEEE Nanotechnology Materials and Devices Conference.

High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer

Min Sang Kim, Sung Hwan Kim, Donggun Park, 2006, IEEE Transactions on Nanotechnology.