P. Panousis

GIMIC-O - A low cost non-epitaxial bipolar LSI technology suitable for application to TTL circuits

R. L. Pritchett, P. Panousis, 1974 .

The influence of debye length on the C-V measurement of doping profiles

W. C. Johnson, P. T. Panousis, P. Panousis, 1971 .

High performance "Upward" Bipolar technology for VLSI

R. L. Pritchett, J. Agraz-Guerena, P. Panousis, 1978, 1978 International Electron Devices Meeting.

The crystal structure determinations of OP(OCH2)3CCH3 and a hydrolysis product of PO3C6H9

P. Panousis, 1967 .

Instrumentation for the Digital Recording of the de Haas‐van Alphen Effect in Impulsive Magnetic Fields

P. Panousis, A. Gold, 1969 .

Effect of silicide process on bipolar transistor current gain

K. Oh, P. Panousis, 1983, IEEE Transactions on Electron Devices.

FIELD‐ENHANCED EMISSION AND CONSTANT‐FIELD DOMAINS IN SEMICONDUCTORS WITH DEEP TRAPS

W. C. Johnson, R. H. Krambeck, P. T. Panousis, 1969 .

OXIL, a versatile bipolar VLSI technology

B.L. Morris, J. Agraz-Guerena, P.T. Panousis, 1980, IEEE Transactions on Electron Devices.

Reaching the limits in silicon processing

P. Panousis, L. Kimerling, K. E. Benson, 1990, AT&T Technical Journal.