H. Gaw

Performance and hot-carrier reliability of deep-submicrometer CMOS

T. Chan, H. Gaw, 1989, International Technical Digest on Electron Devices Meeting.

An analytical model for self-limiting behavior of hot-carrier degradation in 0.25 mu m n-MOSFET's

H. Gaw, C. Liang, P. Cheng, 1992, IEEE Electron Device Letters.

High-field transport of inversion-layer electrons and holes including velocity overshoot

C. Hu, J. Bokor, P. Ko, 1997 .

Process control with chemical amplification resists using deep ultraviolet and x‐ray radiation

D. Seligson, H. Gaw, P. Pianetta, 1988 .

Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K

T. Chan, H. Gaw, S. Lee, 1990, IEEE Electron Device Letters.

Evaluationof a Discrete Sampler / Stopped-FlowMixer System for Equilibriumand KineticAnalyses

H. Gaw, D. Fast, H. Pardue, 2004 .

New insight into hot-electron-induced degradation of n-MOSFETs

T.Y. Chan, H. Gaw, T. Chan, 1988, Technical Digest., International Electron Devices Meeting.