T. Ohnakado

A 1.4dB insertion-loss, 5GHz transmit/receive switch utilizing novel Depletion-layer-Extended Transistors (DETs) in 0.18□m CMOS process

T. Ohnakado, 2002 .

A 1.4 dB insertion-loss, 5 GHz transmit/receive switch utilizing novel depletion-layer-extended transistors (DETs) in 0.18 /spl mu/m CMOS process

S. Yamakawa, E. Taniguchi, A. Furukawa, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Bipolar transistor selected P-channel flash memory cell technology

S. Satoh, T. Ohnakado, N. Ajika, 2001 .

On the Properties of ZnSe/(NH4)2Sx-Pretreated GaAs Heterointerfaces

Yi-hong Wu, T. Ohnakado, Y. Kawakami, 1991 .

p‐type ZnSe grown by molecular beam epitaxy with remote microwave plasma of N2

T. Ohnakado, Y. Kawakami, S. Fujita, 1993 .

Development of new SOI diode structure for beyond 17 μm pixel pitch SOI diode uncooled IRFPAs

Munetaka Ueno, Haruyoshi Katayama, Tadashi Imai, 2011, Defense + Commercial Sensing.